K4A8G085WB-BCTD vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Active
Specification Comparison
| Parameter | K4A8G085WB-BCTD | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $8.53 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 2666 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| Package | FBGA-78 (78-ball TFBGA) | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | — |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Features | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS Latency | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |