K4A8G085WB-BCTD vs K4A8G085WB-BIWE 比較
詳細並排比較 K4A8G085WB-BCTD 由 Samsung Electronics 與 K4A8G085WB-BIWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB-BCTD | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $8.53 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | — |
| 資料速率 | 2666 Mbps | 3200 Mbps |
| 供應電壓 | 1.2 V | 1.2 V |
| Die Revision | B-die | — |
| 封裝 | FBGA-78 (78-ball TFBGA) | 78-FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | — |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| 功能特色 | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS 延遲 | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |