K4A8G085WC-BCRC vs H5AN4G8NBJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCRC disebabkan oleh Samsung Electronics dan H5AN4G8NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BCRC | H5AN4G8NBJR-UHC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 4 Gbit |
| Organisasi | 1G x 8 | 512M x 8 |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kadar Data | 2400 Mbps (DDR4-2400) | 2400 Mbps (PC2400) |
| Kemasan | 78-ball FBGA (TFBGA) | TFBGA-78 (11 x 7.5 mm) |
| Terminal Pitch | 0.8 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| Status RoHS | Compliant | Compliant (Rohs Code: Yes) |
| Refresh | Auto/Self refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| Antaramuka | — | DDR4 (JEDEC) |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -UHC speed bin] |