K4A8G165WC-BCPB vs K4A8G165WB-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCPB disebabkan oleh Samsung Electronics dan K4A8G165WB-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WC-BCPB | K4A8G165WB-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6.25 |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Kadar Data | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps/pin |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Antaramuka | DDR4 (16-bit data bus) | Parallel |
| Kemasan | 96-ball FBGA (TFBGA) | 96FBGA |
| Die Generation | C-die (1Y nm class) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | 0C to +85C |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | On-die termination (ODT) |
| Aras MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance statement] |
| Standard | JEDEC DDR4 SDRAM | — |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |