K4A8G165WC-BCPB vs K4A8G165WB-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCPB sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ NakahandaSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCPB | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $6.25 |
| Uri ng Memory | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Rate ng Data | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps/pin |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Interface | DDR4 (16-bit data bus) | Parallel |
| Packhaging | 96-ball FBGA (TFBGA) | 96FBGA |
| Die Generation | C-die (1Y nm class) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | 0C to +85C |
| Mga Karakteristika | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | On-die termination (ODT) |
| Level ng MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS compliance statement] |
| Standard | JEDEC DDR4 SDRAM | — |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |