K4B4G1646D-BYH9 vs K4B4G1646E-BYK000 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYH9 disebabkan oleh Samsung Electronics dan K4B4G1646E-BYK000 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BYH9 | K4B4G1646E-BYK000 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1333 Mbps | — |
| Tegangan Pemberi Arus | 1.35 V | — |
| Suhu Operasi | 0 ~ 85 °C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 96FBGA | 96-FBGA (BYK) |
| Number of Banks | 8 | [DATA_NEEDED: bank count] |
| Latensi CAS | Programmable | — |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | — |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Jenis Ingatan | — | DDR3L SDRAM |
| Saiz Ingatan | — | 4 Gbit |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| Clock Frequency | — | 800 MHz |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Die Process | — | Samsung E-die |
| Jenis Pemasangan | — | Surface Mount |
| Antaramuka | — | Parallel |
| Ciri-ciri | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Access Time | — | 1.25 ns |