K9DVGB8U5M vs K9MDG08U5M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9DVGB8U5M disebabkan oleh Samsung Electronics dan K9MDG08U5M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9DVGB8U5M | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NAND Flash | MLC Large Block NAND Flash |
| Organisasi | [DATA_NEEDED: capacity organization] | 16G x 8 bit |
| Antaramuka | Asynchronous x8-bit I/O | Asynchronous x8 multiplexed address/data |
| Tegangan Pemberi Arus | [DATA_NEEDED: VCC range] | — |
| Kemasan | [DATA_NEEDED: package type and dimensions] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: tPROG] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Suhu Operasi | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | unknown |
| Density | — | 16 Gbit (2 GB) |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |