K9DVGB8U5M vs K9MDG08U5M 比較
詳細並排比較 K9DVGB8U5M 由 Samsung Electronics 與 K9MDG08U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9DVGB8U5M | K9MDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NAND Flash | MLC Large Block NAND Flash |
| 組織 | [DATA_NEEDED: capacity organization] | 16G x 8 bit |
| 介面 | Asynchronous x8-bit I/O | Asynchronous x8 multiplexed address/data |
| 供應電壓 | [DATA_NEEDED: VCC range] | — |
| 封裝 | [DATA_NEEDED: package type and dimensions] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: tPROG] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 工作溫度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance] | unknown |
| Density | — | 16 Gbit (2 GB) |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |