K9DVGB8U5M vs K9MDG08U5M Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9DVGB8U5M sa pamamagitan ng Samsung Electronics at K9MDG08U5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Nakahanda
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K9DVGB8U5M K9MDG08U5M
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory NAND Flash MLC Large Block NAND Flash
Organisasyon [DATA_NEEDED: capacity organization] 16G x 8 bit
Interface Asynchronous x8-bit I/O Asynchronous x8 multiplexed address/data
Volte ng Pagbibigay [DATA_NEEDED: VCC range] —
Packhaging [DATA_NEEDED: package type and dimensions] 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Page Size [DATA_NEEDED: main page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: erase block size] [DATA_NEEDED: block size]
Read Time (tR) [DATA_NEEDED: page read cycle time] —
Program Time (tPROG) [DATA_NEEDED: page program time] [DATA_NEEDED: tPROG]
Erase Time (tBERS) [DATA_NEEDED: block erase time] —
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: retention specification] —
Temperature na Operasyon [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Access Interface Signals CLE, ALE, WE, RE, CE, R/B, WP —
Bad Block Management Host-managed (controller ECC and bad-block table required) —
Tindminan RoHS [DATA_NEEDED: RoHS compliance] unknown
Density — 16 Gbit (2 GB)
Cell Type — MLC (2 bits per cell)
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]

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