K9DVGB8U5M vs K9PDG08U5M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9DVGB8U5M disebabkan oleh Samsung Electronics dan K9PDG08U5M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | K9DVGB8U5M | K9PDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | NAND Flash | NAND Flash (SLC) |
| Organisasi | [DATA_NEEDED: capacity organization] | x8 (multiplexed I/O) |
| Antaramuka | Asynchronous x8-bit I/O | — |
| Tegangan Pemberi Arus | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage range] |
| Kemasan | [DATA_NEEDED: package type and dimensions] | TSOP1-48 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Suhu Operasi | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |