K9DVGB8U5M vs K9PDG08U5M 比較
詳細並排比較 K9DVGB8U5M 由 Samsung Electronics 與 K9PDG08U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9DVGB8U5M | K9PDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 停產終止 |
| 記憶體類型 | NAND Flash | NAND Flash (SLC) |
| 組織 | [DATA_NEEDED: capacity organization] | x8 (multiplexed I/O) |
| 介面 | Asynchronous x8-bit I/O | — |
| 供應電壓 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage range] |
| 封裝 | [DATA_NEEDED: package type and dimensions] | TSOP1-48 |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 工作溫度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |