M29W128GL70ZA3E vs M29W128GH70ZA3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GL70ZA3E disebabkan oleh Micron Technology dan M29W128GH70ZA3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron
M29W128GH70ZA3E ✓ AktifPengandingan Spesifikasi
| Parametr | M29W128GL70ZA3E | M29W128GH70ZA3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Density | 128 Mbit | — |
| Organisasi | 16M x 8 / 8M x 16 | 8M x 16 |
| Antaramuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 3V / 3.3V | [DATA_NEEDED: supply voltage range] |
| Suhu Operasi | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 64-TBGA (10x13 mm) | 64-TBGA (10x13 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Boot Block Location | Bottom boot (GL variant) | — |
| Bus Width Selection | BYTE pin (x8/x16) | — |
| Packaging | Tray | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Product Longevity Program | No | — |
| FBGA Code | [DATA_NEEDED: FBGA Code] | — |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Endurance] | — |
| Saiz Ingatan | — | 128 Mbit |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot (GH suffix) |
| Program/Erase Voltage | — | [DATA_NEEDED: program/erase voltage] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | — | [DATA_NEEDED: CFI compliance] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |