M29W128GL70ZA3E vs M29W128GH70ZA3E 比較
詳細並排比較 M29W128GL70ZA3E 由 Micron Technology 與 M29W128GH70ZA3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W128GL70ZA3E | M29W128GH70ZA3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash |
| Density | 128 Mbit | — |
| 組織 | 16M x 8 / 8M x 16 | 8M x 16 |
| 介面 | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| 供應電壓 | 3V / 3.3V | [DATA_NEEDED: supply voltage range] |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 64-TBGA (10x13 mm) | 64-TBGA (10x13 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Boot Block Location | Bottom boot (GL variant) | — |
| Bus Width Selection | BYTE pin (x8/x16) | — |
| Packaging | Tray | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Product Longevity Program | No | — |
| FBGA Code | [DATA_NEEDED: FBGA Code] | — |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Endurance] | — |
| 記憶體容量 | — | 128 Mbit |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot (GH suffix) |
| Program/Erase Voltage | — | [DATA_NEEDED: program/erase voltage] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | — | [DATA_NEEDED: CFI compliance] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |