M29W160ET70N3E vs M29F160FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160ET70N3E disebabkan oleh Micron Technology dan M29F160FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron
M29W160ET70N3E ✓ AktifPengandingan Spesifikasi
| Parametr | M29W160ET70N3E | M29F160FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | NOR Flash (Parallel) | Parallel NOR Flash |
| Saiz Ingatan | 16 Mbit | — |
| Organisasi | 2M x 8 / 1M x 16 | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Access Time | 70 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 3 V / 3.3 V (nominal) | 5 V |
| Boot Block Location | Top boot | — |
| Kemasan | 48-TSOP | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40 to +125 C |
| Bus Width Selection | BYTE# pin, x8 or x16 | — |
| Sector Protection | Hardware boot block protection | — |
| Programming Type | Automatic program and erase | — |
| Packing | Tray (RoHS-compliant package, standard packing) | — |
| Status RoHS | Compliant (E suffix) | Compliant (lead-free) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Density | — | 16777 kbits (16 Mbit) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Bottom Boot Block |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |