M29W400FB55N3E vs M29W320DB70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W400FB55N3E disebabkan oleh Micron Technology dan M29W320DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ Aktif
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W400FB55N3E M29W320DB70N3E
Merek Micron Technology Micron Technology
Kategori EEPROM Flash
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) 32 Mbit (33554 kbits)
Organisasi 512K x 8 bit / 256K x 16 bit 2M x 16
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Antaramuka Parallel, 8-bit/16-bit (BYTE# selectable) Parallel
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Non-uniform parameter blocks, boot block (bottom boot, DB type)
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
Suhu Operasi -40C to +125C -40C to +125C
Kemasan 48-TSOP I, 12 x 20 mm 48-TSOP I
Pins 48 —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray —
Status RoHS Compliant ROHS3 Compliant
Speed Grades in Family 55 ns, 70 ns —
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

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