M29W400FB55N3E vs M29W320DB70N3E 比較

詳細並排比較 M29W400FB55N3E 由 Micron Technology 與 M29W320DB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 啟用中
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ 啟用中

規格比較

參數 M29W400FB55N3E M29W320DB70N3E
品牌 Micron Technology Micron Technology
類別 EEPROM Flash
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) 32 Mbit (33554 kbits)
組織 512K x 8 bit / 256K x 16 bit 2M x 16
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
介面 Parallel, 8-bit/16-bit (BYTE# selectable) Parallel
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Non-uniform parameter blocks, boot block (bottom boot, DB type)
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
工作溫度 -40C to +125C -40C to +125C
封裝 48-TSOP I, 12 x 20 mm 48-TSOP I
Pins 48 —
安裝類型 Surface Mount Surface Mount
Packaging Tray —
RoHS 狀態 Compliant ROHS3 Compliant
Speed Grades in Family 55 ns, 70 ns —
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

資料表與資源

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