MT40A2G8AG-062E vs K4AAG085WM-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A2G8AG-062E disebabkan oleh Micron Technology dan K4AAG085WM-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A2G8AG-062E | K4AAG085WM-BCWE |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensi CAS | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Kemasan | 78-FBGA (7.5 x 11 mm) | 78FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Die Revision | AG (current generation) | — |
| Kadar Data | — | 3200 Mbps (DDR4-3200) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | 0C to +85C |
| Antaramuka | — | DDR4 (JEDEC-standard) |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| Aras MSL | — | [DATA_NEEDED: MSL level] |