MT40A2G8AG-062E vs K4AAG085WM-BCWE 比較
詳細並排比較 MT40A2G8AG-062E 由 Micron Technology 與 K4AAG085WM-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A2G8AG-062E | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 組織 | 2G x 8 | 2G x 8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| CAS 延遲 | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| 封裝 | 78-FBGA (7.5 x 11 mm) | 78FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Die Revision | AG (current generation) | — |
| 資料速率 | — | 3200 Mbps (DDR4-3200) |
| 供應電壓 | — | 1.2 V |
| 工作溫度 | — | 0C to +85C |
| 介面 | — | DDR4 (JEDEC-standard) |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |