NT6AN8T6WBJ1B1 vs K4A8G165WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT6AN8T6WBJ1B1 disebabkan oleh Nanya Technology dan K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | NT6AN8T6WBJ1B1 | K4A8G165WC-BCRC |
|---|---|---|
| Merek | Nanya Technology | Samsung Electro-Mechanics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $19.69 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb (512M x 16) | 8 Gbit |
| Kadar Data | 3200 MT/s | 2400 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Latensi CAS | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Kemasan | 96-ball FBGA | 96-FBGA (TFBGA) |
| Suhu Operasi | 0C to +95C (TC) | 0 C to +95 C |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| Status RoHS | Compliant | Compliant |
| Organisasi | — | 512M x 16 |
| Clock Frequency | — | 1333 MHz |
| Antaramuka | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Jenis Pemasangan | — | Surface Mount |
| Ciri-ciri | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |