NT6AN8T6WBJ1B1 vs K4A8G165WC-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT6AN8T6WBJ1B1 sa pamamagitan ng Nanya Technology at K4A8G165WC-BCRC sa pamamagitan ng Samsung Electro-Mechanics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT6AN8T6WBJ1B1 | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Nanya Technology | Samsung Electro-Mechanics |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $19.69 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb (512M x 16) | 8 Gbit |
| Rate ng Data | 3200 MT/s | 2400 Mbps |
| Volte ng Pagbibigay | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Latensya ng CAS | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Packhaging | 96-ball FBGA | 96-FBGA (TFBGA) |
| Temperature na Operasyon | 0C to +95C (TC) | 0 C to +95 C |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| Tindminan RoHS | Compliant | Compliant |
| Organisasyon | — | 512M x 16 |
| Clock Frequency | — | 1333 MHz |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Uri ng Pagpapasok | — | Surface Mount |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |