STI38N65M5 vs IPW65R041CFD Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STI38N65M5 disebabkan oleh STMicroelectronics dan IPW65R041CFD disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr STI38N65M5 IPW65R041CFD
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID) at 25°C 38 A —
Continuous Drain Current (ID) at 100°C 24 A —
Pulsed Drain Current (IDM) 152 A —
Gate-Source Voltage (VGS) ±30 V —
On-Resistance (RDS(on)) 0.099 ohm (typical) —
Total Gate Charge (Qg) 110 nC —
Input Capacitance (Ciss) 4200 pF —
Output Capacitance (Coss) 180 pF —
Reverse Transfer Capacitance (Crss) 12 pF —
Avalanche Energy (EAS) 1.2 J —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan TO-247 PG-TO247-3 (TO-247, through-hole)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant Compliant (GREEN package per digchip specification listing)
Boson Bebas Yes —
Operating Mode — Enhancement
Technology — CoolMOS CFD2 (superjunction, fast body diode)
Drain-Source Breakdown Voltage V(BR)DSS — 650 V
On-Resistance RDS(on) — 41 mOhm
Continuous Drain Current ID — 68.5 A (Tc)
Power Dissipation PD — 500 W (Tc)
Total Gate Charge Qg — 300 nC
Gate-Source Voltage VGS — [DATA_NEEDED: VGS rating]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) range]
Thermal Resistance RthJC — [DATA_NEEDED: RthJC]
Body Diode — Integrated fast body diode
Package Color / Material — Green plastic (halogen-aware molding per digchip listing)
Application Segment — Industrial

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