STI38N65M5 vs IPW65R041CFD 比較
詳細並排比較 STI38N65M5 由 STMicroelectronics 與 IPW65R041CFD 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ 啟用中
規格比較
| 參數 | STI38N65M5 | IPW65R041CFD |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at 25°C | 38 A | — |
| Continuous Drain Current (ID) at 100°C | 24 A | — |
| Pulsed Drain Current (IDM) | 152 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.099 ohm (typical) | — |
| Total Gate Charge (Qg) | 110 nC | — |
| Input Capacitance (Ciss) | 4200 pF | — |
| Output Capacitance (Coss) | 180 pF | — |
| Reverse Transfer Capacitance (Crss) | 12 pF | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| 工作溫度範圍 | -55°C to +150°C | — |
| 封裝 | TO-247 | PG-TO247-3 (TO-247, through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant | Compliant (GREEN package per digchip specification listing) |
| 無鹵素 | Yes | — |
| Operating Mode | — | Enhancement |
| Technology | — | CoolMOS CFD2 (superjunction, fast body diode) |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 650 V |
| On-Resistance RDS(on) | — | 41 mOhm |
| Continuous Drain Current ID | — | 68.5 A (Tc) |
| Power Dissipation PD | — | 500 W (Tc) |
| Total Gate Charge Qg | — | 300 nC |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS rating] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Thermal Resistance RthJC | — | [DATA_NEEDED: RthJC] |
| Body Diode | — | Integrated fast body diode |
| Package Color / Material | — | Green plastic (halogen-aware molding per digchip listing) |
| Application Segment | — | Industrial |