STW12NK95Z vs STW11NK90Z Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci STW12NK95Z disebabkan oleh STMicroelectronics dan STW11NK90Z disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ Aktif
Pengandingan Spesifikasi
| Parametr | STW12NK95Z | STW11NK90Z |
|---|---|---|
| Merek | STMicroelectronics | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (Vdss) | 950 V | — |
| Continuous Drain Current (Id) at Tc | 10 A | — |
| On-Resistance (Rds on) Max | 0.90 ohm | — |
| On-Resistance (Rds on) Typ | 0.69 ohm | — |
| Power Dissipation (Pd) at Tc | 230 W | — |
| Technology | SuperMESH (Zener-protected PowerMESH) | — |
| Gate Protection | Zener-protected gate oxide | — |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | Extremely high [DATA_NEEDED: dv/dt value] | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Kemasan | TO-247-3 | TO-247 |
| Suhu Operasi | -55C to +150C (junction) | — |
| Gate Charge | Minimized [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Drain-Source Voltage (VDS) | — | 900 V |
| Continuous Drain Current (ID) at 25°C | — | 9.5 A |
| Continuous Drain Current (ID) at 100°C | — | 6 A |
| Pulsed Drain Current (IDM) | — | 38 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.85 ohm |
| Gate Threshold Voltage (VGS(th)) | — | 3 V to 5 V |
| Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 150 pF |
| Reverse Transfer Capacitance (Crss) | — | 20 pF |
| Maximum Power Dissipation (PD) | — | 250 W |
| Operating Junction Temperature (Tj) | — | -55°C to +150°C |