STW12NK95Z vs STW11NK90Z Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng STW12NK95Z sa pamamagitan ng STMicroelectronics at STW11NK90Z sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
STW12NK95Z ✓ NakahandaSTMicroelectronics
STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
STW11NK90Z ✓ NakahandaPagsanggunian na paghahambing
| Parametro | STW12NK95Z | STW11NK90Z |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (Vdss) | 950 V | — |
| Continuous Drain Current (Id) at Tc | 10 A | — |
| On-Resistance (Rds on) Max | 0.90 ohm | — |
| On-Resistance (Rds on) Typ | 0.69 ohm | — |
| Power Dissipation (Pd) at Tc | 230 W | — |
| Technology | SuperMESH (Zener-protected PowerMESH) | — |
| Gate Protection | Zener-protected gate oxide | — |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | Extremely high [DATA_NEEDED: dv/dt value] | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Packhaging | TO-247-3 | TO-247 |
| Temperature na Operasyon | -55C to +150C (junction) | — |
| Gate Charge | Minimized [DATA_NEEDED: Qg typical value] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Drain-Source Voltage (VDS) | — | 900 V |
| Continuous Drain Current (ID) at 25°C | — | 9.5 A |
| Continuous Drain Current (ID) at 100°C | — | 6 A |
| Pulsed Drain Current (IDM) | — | 38 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.85 ohm |
| Gate Threshold Voltage (VGS(th)) | — | 3 V to 5 V |
| Gate Charge (Qg) | — | 45 nC |
| Input Capacitance (Ciss) | — | 1900 pF |
| Output Capacitance (Coss) | — | 150 pF |
| Reverse Transfer Capacitance (Crss) | — | 20 pF |
| Maximum Power Dissipation (PD) | — | 250 W |
| Operating Junction Temperature (Tj) | — | -55°C to +150°C |