VNQ660SPTR-E vs VNQ660SP Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci VNQ660SPTR-E disebabkan oleh STMicroelectronics dan VNQ660SP disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr VNQ660SPTR-E VNQ660SP
Merek STMicroelectronics STMicroelectronics
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Quad-channel high-side solid-state relay Quad Channel High-Side Solid State Relay
Technology ST VIPower M0-3 (vertical DMOS) VIPower M0-3
Number of Channels 4 4
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) —
Input Compatibility CMOS logic-level inputs CMOS-compatible logic inputs
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
Suhu Operasi -40 C to +125 C —
Kemasan PowerSO-10 with exposed bottom pad PowerSO-10 (10-pin with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
Status RoHS Compliant —
Part Number — VNQ660SP
Manufacturer — STMicroelectronics
Konfigurasi Output — High-Side (N-Channel MOSFET)
On-Resistance RDS(on) per Channel — 50 mΩ (typical)
Continuous Output Current per Channel — 6 A
Supply Voltage VCC — 10 V to 36 V
Open-Load Detection — Yes (off-state)
Undervoltage Shutdown — Yes
Overvoltage Shutdown — Yes
Overvoltage Clamp — Yes (active avalanche)
Pengumpasan Panas — Yes
Current Limitation — Yes

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