VNQ660SPTR-E vs VNQ660SP 比較

詳細並排比較 VNQ660SPTR-E 由 STMicroelectronics 與 VNQ660SP 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

STMicroelectronics
VNQ660SPTR-E VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E ✓ 啟用中

規格比較

參數 VNQ660SPTR-E VNQ660SP
品牌 STMicroelectronics STMicroelectronics
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Quad-channel high-side solid-state relay Quad Channel High-Side Solid State Relay
Technology ST VIPower M0-3 (vertical DMOS) VIPower M0-3
Number of Channels 4 4
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) —
Input Compatibility CMOS logic-level inputs CMOS-compatible logic inputs
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
工作溫度 -40 C to +125 C —
封裝 PowerSO-10 with exposed bottom pad PowerSO-10 (10-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
RoHS 狀態 Compliant —
Part Number — VNQ660SP
Manufacturer — STMicroelectronics
輸出配置 — High-Side (N-Channel MOSFET)
On-Resistance RDS(on) per Channel — 50 mΩ (typical)
Continuous Output Current per Channel — 6 A
Supply Voltage VCC — 10 V to 36 V
Open-Load Detection — Yes (off-state)
Undervoltage Shutdown — Yes
Overvoltage Shutdown — Yes
Overvoltage Clamp — Yes (active avalanche)
過熱關機 — Yes
Current Limitation — Yes

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