IMBF170R650M1XTMA1 - 1700V SiC MOSFET, 7.4A, TO-263-7 | Infineon
MPN: IMBF170R650M1XTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.75 | $6.75 |
| 10 | $5.95 | $59.50 |
| 100 | $5.3 | $530.00 |
| 500 | $4.75 | $2,375.00 |
| 1,000 | $4.25 | $4,250.00 |
IMBF170R650M1XTMA1 Overview
What is a SiC MOSFET? A silicon-carbide metal-oxide-semiconductor field-effect transistor is a wide-bandgap power switch that offers higher breakdown voltage, lower on-state resistance per unit area, and faster switching than silicon MOSFETs or IGBTs at comparable voltage classes. It belongs to the hierarchy: SiC MOSFET -> SiC power device -> wide-bandgap semiconductor -> power discrete. Compared to silicon super-junction MOSFETs of similar rating, SiC parts typically achieve 50-70% lower switching losses and can operate at junction temperatures up to 175 C.
Key features of the IMBF170R650M1 include an ultra-low on-state resistance of 650 mΩ at the rated gate drive, a low reverse-recovery charge body diode that simplifies flyback synchronous-rectifier-free designs, and a high-creepage TO-263-7-13 package that meets 1700 V reinforced-insulation creepage and clearance requirements. The part is qualified to industrial-grade reliability standards and is specified for continuous operation up to 175 C junction temperature, enabling compact flyback converters without external heatsinking at modest power levels.
The trench SiC cell geometry minimises conduction losses at low line voltage, while the robust gate-oxide process tolerates standard 12 V gate drive without negative bias requirements. The intrinsic body diode supports hard-switched flyback operation, removing the need for an external anti-parallel silicon diode in many topologies. This combination delivers high efficiency at high switching frequencies, allowing magnetics shrinkage in auxiliary supply designs.
Typical applications include auxiliary SMPS for three-phase solar inverters, EV charging station auxiliary rails, industrial drive control-power supplies, and high-voltage DC-DC converters operating from 600 V to 1000 V DC-link buses. Infineon's reference design demonstrates a quasi-resonant flyback converter delivering +15 V, -15 V, and +24 V outputs up to 62.5 W from 200 V to 1000 V DC input, peaking at 90.56% efficiency at full load.
Designers should follow PCB layout best practices for high-voltage SiC devices: minimise gate-loop inductance with a 0 V to 12 V gate drive return path placed directly under the gate pin, use wide copper pours for power-loop inductance reduction, and consider a TVS diode on the gate for VGS transient clamping. Always verify creepage and clearance distances to surrounding high-voltage traces for 1700 V reinforced-insulation compliance per IEC 60664-1.
This page synthesises distributor pricing, drop-in alternative candidates, and application-specific design notes not consolidated on the manufacturer datasheet - giving power engineers a single reference for component selection, second-source validation, and flyback converter design kickoff.
Drop-in alternatives for IMBF170R650M1XTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IMBF170R450M1XTMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IMBF170R650M1XTMA2
✅ Drop-In📋 Reference alternative (not in catalog)
IMW120R220M1XTMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IMBF170R650M1XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | CoolSiC 1700 V SiC Trench MOSFET |
| Transistor Type | N-Channel SiC MOSFET |
| Drain-Source Voltage (VDS) | 1700 V |
| Continuous Drain Current (ID, Tc) | 7.4 A |
| Power Dissipation (PD, Tc) | 88 W |
| On-State Resistance (RDS(on)) | 650 mΩ |
| Gate-Source Voltage (VGS) | -5 V to +20 V (12 V / 0 V recommended) |
| Configuration | Single with built-in body diode |
| Package | PG-TO263-7-13 (TO-263-7 high creepage, surface mount) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C |
| Maximum Operating Temperature | 175 C |
| JESD-30 Code | R-PSSO-G7 |
| Target Topology | Quasi-resonant flyback (auxiliary SMPS) |
| Target DC-Link Range | 600 V to 1000 V DC |
| Technology | Silicon Carbide (SiC) Trench |
| RoHS Status | Compliant |
IMBF170R650M1XTMA1 Pin Configuration
| Pin 1 | Source — Source terminal (Kelvin source connection recommended for gate drive) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input (12 V / 0 V recommended) |
| Pin 5 | Drain — Drain terminal (electrically connected to tab) |
| Pin 6 | Drain — Drain terminal (electrically connected to tab) |
| Pin 7 | Drain — Drain terminal (electrically connected to tab) |
| Pin TAB | Drain — Metal tab - primary drain connection and thermal pad (solder to PCB copper pour) |
Safe Operating Area - IMBF170R650M1 (estimated based on 88 W PD, 1700 V VDS)
Typical Applications
IMBF170R650M1XTMA1 is suitable for 6 applications: Solar Inverter Auxiliary SMPS, EV Charging Station Auxiliary Power, Industrial Drive Control-Power Supply, High-Voltage DC-DC Converter Module, Three-Phase Solar Microinverter, Traction Auxiliary Supply (Railway).
Solar Inverter Auxiliary SMPS
The IMBF170R650M1XTMA1's 1700 V VDS rating and 7.4 A continuous current make it purpose-built for auxiliary flyback converters in three-phase solar string and central inverters. Operating directly from 600 V to 1000 V DC-link rails eliminates an intermediate buck stage, reducing BOM count and converter cost. The 650 mΩ RDS(on) at 12 V gate drive balances conduction loss against switching loss for quasi-resonant flyback topologies. Compared to silicon IGBT alternatives, the SiC trench cell geometry cuts switching losses by 50-70%, enabling 90%+ peak efficiency at full load per Infineon's 62.5 W reference design. The PG-TO263-7-13 high-creepage package meets reinforced-insulation creepage for 1500 V DC-link systems per IEC 60664-1, eliminating conformal coating requirements.
Recommended
EV Charging Station Auxiliary Power
Electric vehicle charging stations require auxiliary rails (+15 V, -15 V, +24 V) for gate drivers, cooling fans, contactor coils, and communication modules, all powered from the high-voltage DC bus. The IMBF170R650M1XTMA1's 1700 V breakdown voltage comfortably handles 800 V and 1200 V battery architectures with 30%+ voltage margin. Its 12 V / 0 V gate-source interface connects directly to standard flyback controllers without negative bias supply, simplifying gate-drive circuitry. At 7.4 A continuous current, the part delivers 60-80 W output - sufficient for full auxiliary load with thermal headroom. The 175 C maximum junction temperature supports under-hood mounting in liquid-cooled charger enclosures where ambient temperatures can exceed 85 C.
Recommended
Industrial Drive Control-Power Supply
Industrial variable-frequency drives (VFDs) require isolated auxiliary supplies to power IGBT gate drivers, control MCUs, and isolation barriers from the high-voltage DC bus. The IMBF170R650M1XTMA1 in a quasi-resonant flyback converter delivers 62.5 W of isolated output with 90.56% peak efficiency per Infineon's reference design. Its built-in body diode with low reverse-recovery charge removes the need for an external anti-parallel SiC diode, reducing BOM cost by 10-15% versus discrete solutions. The wide operating temperature range (-55 C to +175 C) supports cabinet-mounted designs with minimal derating. PCB layout in TO-263-7 surface-mount format enables automated assembly, reducing manufacturing cost versus TO-247 through-hole alternatives.
Recommended
High-Voltage DC-DC Converter Module
Modular DC-DC converters stepping down 1000 V DC bus voltages to 24 V or 48 V for telecom and railway auxiliary systems benefit from the IMBF170R650M1XTMA1's 1700 V SiC trench technology. At switching frequencies above 100 kHz in quasi-resonant mode, the part's low switching losses enable 10-15% efficiency improvement over 1700 V silicon MOSFETs, reducing heatsink requirements. The 88 W power dissipation rating (Tc) supports continuous full-power operation in sealed IP67 modules where convection cooling is limited. Reinforced-insulation creepage in the TO-263-7-13 package simplifies IEC 61800-5-1 compliance for industrial drive bus converters and railway traction auxiliary supplies.
Recommended
Three-Phase Solar Microinverter
Microinverters for three-phase residential and commercial solar installations require compact, high-efficiency auxiliary supplies operating from 600 V to 1500 V DC-link rails. The IMBF170R650M1XTMA1's surface-mount TO-263-7 package enables automated reflow assembly, reducing per-unit manufacturing cost versus through-hole alternatives. Its 1700 V rating provides the voltage margin needed for 1500 V DC-link systems, the new standard for utility-scale solar. Combined with Infineon's quasi-resonant flyback controller reference design, the part delivers 62.5 W across +15 V, -15 V, and +24 V rails with 90.56% peak efficiency. The 7.4 A continuous current supports microinverter auxiliary loads including DSP control, gate drivers, and communication modules.
Recommended
Traction Auxiliary Supply (Railway)
Railway traction auxiliary converters stepping down 1500 V DC overhead lines or 3000 V DC third rails to 24 V, 48 V, or 110 V control bus voltages are ideal applications for the IMBF170R650M1XTMA1. The 1700 V VDS rating comfortably handles 1500 V DC systems with adequate transient margin for regenerative braking events. EN 50155 railway compliance requires -40 C to +85 C operation with extended temperature tolerance - the part's -55 C to +175 C junction range supports these requirements with substantial headroom. The TO-263-7-13 high-creepage package simplifies EN 50124-1 creepage and clearance compliance for traction equipment, reducing qualification testing scope.
Recommended
Recommended Products Summary
Engineering reference data for IMBF170R650M1XTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMBF170R450M1XTMA1 | IMBF170R650M1XTMA2 | IMW120R220M1XTMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-7-13 (surface mount) | PG-TO263-7-13 - same | PG-TO263-7-13 - same | TO-247-3 (through-hole, different footprint) |
| Drain-Source Voltage (VDS) | 1700 V | 1700 V - same | 1700 V - same | 1200 V |
| Continuous Drain Current (Tc) | 7.4 A | 7.4 A - same | 7.4 A - same | 10 A |
| On-State Resistance (RDS(on)) | 650 mΩ | 450 mΩ | 650 mΩ - same | 220 mΩ |
| Power Dissipation (Tc) | 88 W | 88 W - same | 88 W - same | 94 W |
| Technology | SiC Trench | SiC Trench | SiC Trench | SiC Trench |
| Target Topology | Quasi-resonant flyback | Quasi-resonant flyback | Quasi-resonant flyback | PFC / general high-voltage switching |
| Max Junction Temperature | 175 C | 175 C - same | 175 C - same | 175 C - same |
Key Differentiators
- Highest VDS rating in surface-mount TO-263-7 high-creepage package (vs Standard 1200 V SiC MOSFETs in D2PAK-7)
- Lower RDS(on) than the 650 mΩ baseline variant within the same family (vs IMBF170R650M1XTMA2 (identical part, different reel code))
- Surface-mount compatibility for automated assembly (vs IMW120R220M1XTMA1 in TO-247-3)
- 12 V / 0 V gate drive compatibility without negative bias supply (vs Older SiC MOSFETs requiring -3 V to -5 V VGS off-state)
Design Notes
Estimated: At continuous 7.4 A load with 650 mΩ RDS(on), the IMBF170R650M1XTMA1 dissipates approximately 35.6 W of conduction loss - near the 88 W PD maximum at Tc=25 C. In practice, the part should operate with at least 50% thermal derating. Mount the TO-263-7 tab to a minimum 1 square inch of 2 oz copper on a 4-layer FR4 PCB, achieving theta_JA of approximately 40-50 C/W. For continuous full-power operation, an external heatsink with theta_SA of 5-10 C/W is recommended. The 175 C maximum junction temperature supports operation in sealed enclosures up to 85 C ambient with appropriate derating.
Minimise gate-loop inductance by routing the 12 V gate drive return path directly under the gate pin (pin 4) with a wide, short trace on an inner PCB layer. Place a 10-100 Ω gate resistor in series with the gate pin to damp gate-oscillation ringing, which can otherwise exceed the maximum VGS rating of 20 V during fast switching transitions. Use a TVS diode (e.g., 18 V bidirectional) from gate to source for transient clamping. Maintain at least 13 mm creepage distance between drain-connected copper and any low-voltage secondary-side traces to meet IEC 60664-1 reinforced insulation for 1700 V applications.
Route the power loop (drain to transformer primary to source) on the top layer with minimal area to reduce parasitic inductance. Use a ground plane on layer 2 with cuts only under the gate-drive area to avoid capacitive coupling that injects switching noise into the gate. Place the Y-capacitor for primary-secondary isolation directly across the transformer isolation barrier with traces less than 5 mm long. For quasi-resonant flyback operation, the demagnetisation sense winding should be placed adjacent to the auxiliary winding with tight coupling to ensure accurate valley detection.
Do not exceed VGS = 20 V or apply negative VGS below -5 V - SiC MOSFET gate oxides are thinner than silicon and more sensitive to overvoltage. Do not parallel multiple IMBF170R650M1XTMA1 devices without matched gate resistors and symmetric source-layout inductance - the part's positive temperature coefficient of RDS(on) helps thermal sharing but layout mismatch can still cause current imbalance. Avoid using the part in hard-switched half-bridge topologies above 100 kHz without adequate thermal management - the body diode reverse recovery can cause additional switching loss in bidirectional topologies.
The IMBF170R650M1XTMA1's fast switching edges (dV/dt typically 20-50 V/ns) couple high-frequency noise into adjacent traces through parasitic capacitance. Keep sensitive analog signals (e.g., flyback controller CS pin, optocoupler feedback) routed away from drain and source switching nodes. Use a 4-layer PCB with dedicated power and ground planes to provide natural shielding. Add an RC snubber (e.g., 10 Ω + 470 pF) across the transformer primary if ringing exceeds 80% of VDS - typical for high-leakage-inductance transformers in quasi-resonant flyback designs.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade part. Automotive-grade equivalent should be sourced separately if required. Halogen-free status not explicitly stated in verified web data.
