IMBG40R011M2HXTMA1 - 400V 133A SiC MOSFET, 11mΩ | Infineon
MPN: IMBG40R011M2HXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $13.85 | $1,385.00 |
| 500 | $12.1 | $6,050.00 |
| 1,000 | $10.95 | $10,950.00 |
IMBG40R011M2HXTMA1 Overview
A SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) is a wide-bandgap power semiconductor switch that operates at higher voltages, frequencies, and temperatures than conventional silicon MOSFETs. Within the power-conversion hierarchy, SiC MOSFETs sit above silicon MOSFETs and IGBTs in switching-frequency and efficiency capability, and are widely used in hard- and soft-switching power topologies where silicon devices lose too much energy.
Key features include a 400V drain-source breakdown rating suitable for 230V AC PFC front-ends and 380V DC bus designs, an 11 mOhm typical R_DS(on) at V_GS=18V, an integrated anti-parallel body diode optimized for hard-switching commutation, and a Kelvin-source pin in the D2PAK-7 package to reduce gate-loop inductance. Compared to the G1 generation, the G2 die reduces R_DS(on) per area and improves short-circuit ruggedness.
The device is targeted at high-density SMPS, totem-pole PFC, solar inverters, energy storage, and AI-server PSU designs. According to the Infineon product page, the CoolSiC™ 400V G2 family is engineered for 2-level and 3-level hard- and soft-switching topologies where it delivers "outstanding levels of power density and system efficiency".
When designing with this MOSFET, gate-drive voltage of +18V/-3V to +18V/-5V is recommended (V_GS(th) is typically 3.5V). The exposed tab of the D2PAK must be soldered to a sufficient copper pour for thermal dissipation; at 429W pulsed (Tc) capability, PCB layout is the primary thermal bottleneck. Always use a low-inductance gate-driver loop to avoid dv/dt-induced false turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the IMBG40R011M2HXTMA1 that are not consolidated in the manufacturer datasheet.
Drop-in alternatives for IMBG40R011M2HXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IMBG40R007M2HXTMA1
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IMBG40R015M2HXTMA1
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IMBG40R022M2HXTMA1
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IMBT40R011M2HXTMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IMBG40R011M2HXTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies AG |
| Product Family | CoolSiC™ 400V G2 |
| Technology | Silicon Carbide (SiC) MOSFET, N-Channel |
| Drain-Source Voltage (V_DS) | 400 V |
| Continuous Drain Current (I_D) | 13.4 A (Ta), 133 A (Tc) |
| On-State Resistance (R_DS(on), typ) | 11 mOhm |
| Power Dissipation (P_D) | 3.8 W (Ta), 429 W (Tc) |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V (typical, per SiC MOSFET datasheet convention) |
| Recommended Gate Drive | +18 V / -3 V to -5 V |
| Body Diode | Integrated, optimized for hard-switching |
| Package | PG-TO263-7-11 (D2PAK-7, 7 leads + tab) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction, per SiC MOSFET standard) |
| MSL Level | 1 (per JEDEC J-STD-020, typical for D2PAK-7) |
| RoHS Status | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| AEC-Q101 Automotive | Not qualified (industrial grade) |
IMBG40R011M2HXTMA1 Pin Configuration
| Pin 1 | Source (low-side) — Power source, pin 1 of 7 |
| Pin 2 | Source (low-side) — Power source, pin 2 of 7 |
| Pin 3 | Source (low-side) — Power source, pin 3 of 7 |
| Pin 4 | Kelvin Source — Gate-driver return pin, separate from power source |
| Pin 5 | Gate — Gate drive input, V_GS rated +18V/-5V |
| Pin 6 | Drain (high-side) — Power drain, pin 6 of 7 |
| Pin 7 | Drain (high-side) — Power drain, pin 7 of 7 |
| Pin Tab | Drain (tab) — Central exposed tab - electrical drain, primary thermal path |
Safe Operating Area (DC) - per Infineon CoolSiC G2 datasheet convention
Typical Applications
IMBG40R011M2HXTMA1 is suitable for 6 applications: Totem-Pole PFC for AI Server PSU, Solar String Inverter DC-AC Stage, Energy Storage Bidirectional DC-DC, Industrial SMPS 3-Phase Input PFC, Electric Vehicle On-Board Charger, Telecom Rectifier 48V Output.
Totem-Pole PFC for AI Server PSU
The IMBG40R011M2HXTMA1 is ideally suited for the high-frequency leg of a bridgeless totem-pole PFC stage in 3-5 kW AI server PSUs targeting 80Plus Titanium efficiency. Its 11 mOhm R_DS(on) at V_GS=18V keeps full-load conduction loss to approximately 8-12W per device at 30A, and the CoolSiC G2 die's low Q_rr body diode eliminates the need for an external anti-parallel Si diode. Combined with the 7+Tab D2PAK-7 Kelvin-source pin, the part enables clean switching at 65-100 kHz without dv/dt-induced false turn-on, allowing the magnetic components to shrink by 30-40% versus a silicon MOSFET solution.
Recommended
Solar String Inverter DC-AC Stage
In residential and small-commercial 3-10 kW solar string inverters, the IMBG40R011M2HXTMA1 replaces 600V silicon IGBTs on the high-frequency switching leg to deliver 0.5-1.5% higher CEC-weighted efficiency. The 400V V_DS rating is sufficient for 230V AC grid-tie output stages fed from a 380V DC bus, and the 11 mOhm on-state resistance reduces thermal stress on the heatsink. The exposed D2PAK-7 tab allows direct top-side cooling, and the part's -55C to +175C junction temperature range handles the thermal cycling seen in outdoor inverter enclosures.
Recommended
Energy Storage Bidirectional DC-DC
Battery energy storage systems (BESS) operating from a 48-150V battery bus up to a 380V DC-link use the IMBG40R011M2HXTMA1 in a bidirectional CLLC or DAB converter. The 11 mOhm R_DS(on) minimizes round-trip efficiency loss, which is critical because every 0.5% efficiency loss in a 100 kWh BESS equals 0.5 kWh of stored energy dissipated per cycle. The SiC MOSFET's high switching frequency capability (100-200 kHz) shrinks the resonant tank magnetics by 2-3x versus a 600V IGBT solution, directly reducing system cost and weight.
Recommended
Industrial SMPS 3-Phase Input PFC
Three-phase industrial SMPS front-ends (3-10 kW) using a 3-level Vienna rectifier or 6-switch PFC topology benefit from the IMBG40R011M2HXTMA1's high switching speed and 400V rating. The part's integrated body diode handles the hard-commutated leg transitions in 3-level topologies, eliminating external anti-parallel diodes and reducing BOM cost. The 11 mOhm R_DS(on) at 25C combined with the D2PAK-7 thermal pad allows sustained operation at 30-40A in well-cooled industrial enclosures without active airflow.
Recommended
Electric Vehicle On-Board Charger
In 6.6-22 kW EV on-board chargers (OBC), the IMBG40R011M2HXTMA1 is used on the PFC and DC-DC high-frequency legs where its 400V V_DS rating suits the 400V traction bus. The SiC MOSFET's low switching loss enables OBC designs to achieve >95% peak efficiency, directly extending vehicle range by 1-2% per charge cycle. Note: this part is industrial-grade (not AEC-Q101); for AEC-Q100/AEC-Q101 qualified SiC alternatives, see Infineon's automotive CoolSiC™ product line.
Recommended
Telecom Rectifier 48V Output
High-efficiency 3-6 kW telecom rectifiers (typically -48V output from a 380V DC bus) use the IMBG40R011M2HXTMA1 in the primary-side full-bridge or phase-shifted ZVS stage. The 11 mOhm R_DS(on) at the 18V gate drive reduces primary conduction loss to approximately 5-7W per device at 20A, helping the rectifier meet 96-98% peak efficiency targets required by modern hyperscale data-center deployments. The D2PAK-7 surface-mount package simplifies automated assembly versus TO-247 through-hole parts.
Recommended
Recommended Products Summary
Engineering reference data for IMBG40R011M2HXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMBG40R007M2HXTMA1 | IMBG40R015M2HXTMA1 | IMBG40R022M2HXTMA1 | IMBT40R011M2HXTMA1 |
|---|---|---|---|---|---|
| Package | PG-TO263-7-11 (D2PAK-7) | PG-TO263-7-11 (D2PAK-7) - same | PG-TO263-7-11 (D2PAK-7) - same | PG-TO263-7-11 (D2PAK-7) - same | PG-TO263-7-11 (D2PAK-7) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V_DS) | 400 V | 400 V | 400 V | 400 V | 400 V |
| R_DS(on) (typ at V_GS=18V) | 11 mOhm | 7 mOhm | 15 mOhm | 22 mOhm | 11 mOhm |
| Continuous I_D (Tc) | 133 A | 170 A (est., higher current capability) | 100 A (est., lower current capability) | 80 A (est.) | 133 A |
| Technology | CoolSiC G2 SiC | CoolSiC G2 SiC | CoolSiC G2 SiC | CoolSiC G2 SiC | CoolSiC G2 SiC |
| Gate Drive (recommended) | +18V / -3V to -5V | +18V / -3V to -5V | +18V / -3V to -5V | +18V / -3V to -5V | +18V / -3V to -5V |
| Body Diode Optimization | Hard-switching optimized | Hard-switching optimized | Hard-switching optimized | Hard-switching optimized | Hard-switching optimized |
| Automotive Grade (AEC-Q101) | No (industrial) | No (industrial) | No (industrial) | No (industrial) | No (industrial) |
Key Differentiators
- Lowest R_DS(on) in 400V SiC D2PAK-7 family at 11 mOhm (vs IMBG40R015M2HXTMA1)
- CoolSiC G2 second-generation die technology (vs IMBT40R011M2HXTMA1)
- Kelvin-source pin for clean high-frequency gate drive (vs Generic 3-pin D2PAK silicon MOSFETs)
Design Notes
The PG-TO263-7-11 (D2PAK-7) package dissipates up to 429W pulsed (Tc) but the realistic PCB-limited steady-state dissipation is typically 30-50W. Estimated: with 1 oz copper on a 25x25mm thermal pad and natural convection, theta_JA is approximately 40-50 C/W, limiting continuous dissipation to about 2-3W before active cooling is required. For applications dissipating 10W+ per device, use a top-side heatsink bonded to the exposed tab with thermal interface material rated for 175C operation. The D2PAK-7 tab is the only thermal path; the 7 source pins carry current but contribute negligibly to heat spreading.
The Kelvin-source pin (pin 4) MUST be tied to the gate-driver ground return, not to the power source inductance path. Route the gate-drive loop (gate driver output -> pin 5 gate -> pin 4 Kelvin source -> gate driver ground) as a tight loop with area < 1 cm² to minimize gate-loop inductance. Use a 4-layer PCB with the gate-driver placed within 5mm of the D2PAK-7. Place a 10-22 ohm gate-drive resistor close to the gate pin to dampen ringing. Estimated: with proper Kelvin-source layout, switching rise time of 5-10 ns is achievable at 400V/30A without external snubbers.
Do not use a generic silicon-MOSFET gate driver with the IMBG40R011M2HXTMA1: SiC MOSFETs require negative off-state voltage (-3V to -5V) to prevent dv/dt-induced false turn-on, which standard silicon drivers do not provide. Also, never exceed V_GS=+20V or go below V_GS=-10V (per Infineon's CoolSiC G2 datasheet) - both cause permanent gate-oxide damage. Do not parallel multiple IMBG40R011M2HXTMA1 devices without individual source resistors (1-2 ohm in series with each source pin) to prevent thermal runaway from R_DS(on) positive temperature coefficient mismatch.
SiC MOSFETs switch 5-10x faster than silicon MOSFETs, generating high dV/dt (50-100 kV/us) that couples into adjacent traces via parasitic capacitance. Use a common-mode choke on the gate-drive supply and a ferrite bead on the Kelvin-source return to attenuate 30-100 MHz common-mode noise. Keep the power loop (DC+ bus -> high-side MOSFET -> low-side MOSFET -> DC- bus) area below 0.5 cm² to minimize radiated EMI. Estimated: a properly laid-out CoolSiC totem-pole PFC stage can meet EN 55011 Class A conducted EMI without a common-mode filter.
Compliance Information
RoHS and REACH compliant per Infineon product declaration. Lead-free and halogen-free per JEDEC J-STD-609 marking. Not AEC-Q100/Q101 qualified - this is an industrial-grade part. For automotive applications, use Infineon's AEC-Q101 qualified CoolSiC™ Automotive family.
