IR2114SSPBF vs 2ED2106S06FXUMA1 Comparison

Detailed side-by-side comparison of IR2114SSPBF by Infineon and 2ED2106S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2114SSPBF 2ED2106S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-bridge gate driver High-Side and Low-Side (Half-Bridge)
Number of Outputs 2 (high-side + low-side) 2 (1 high-side, 1 low-side)
Topology Non-inverting —
Offset (high-side) Voltage (max) 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Logic Supply (VDD) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 25 V (with respect to VS) —
Source Current (typ.) 2 A 0.29 A
Sink Current (typ.) 3 A 0.7 A
Rise / Fall Time (typ.) [DATA_NEEDED: rise/fall time] —
Propagation Delay (typ.) 50 ns 100 ns
Input Logic Compatibility 3.3 V / 5 V CMOS/LSTTL CMOS, TTL
UVLO Thresholds VCC and VBS, internally set —
Integrated Bootstrap Diode Yes —
Over-Current Shutdown Yes (programmable, with FAULT output) —
Operating Temperature -40 C to +125 C —
Package 24-SSOP (7.80 mm wide, 1.75 mm height) PG-DSO-8-69 (DSO-8)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant —
Offset Voltage (Voffset max) — 650 V
Number of Drivers — 2
Number of Pins — 8
Bootstrap Diode — Integrated
Operating Temperature Range — -40C to +125C
Packaging — Tape & Reel
Output Type — Half-Bridge, Non-Inverting

Datasheets & Resources

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