IR21814STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR21814STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.73 | $1.73 |
| 10 | $1.55 | $15.50 |
| 100 | $1.21 | $121.00 |
| 500 | $1.07 | $535.00 |
| 1,000 | $0.93 | $930.00 |
| 2,500 | $0.77 | $1,925.00 |
IR21814STRPBF Overview
A half-bridge gate driver is a power management IC that controls one high-side and one low-side MOSFET or IGBT in a totem-pole configuration, translating low-voltage PWM logic signals into the high-voltage, high-current drive required to switch the power devices efficiently. Within the broader taxonomy, gate drivers sit between microcontrollers/MOSFET gate resistors and the discrete power switches themselves in the signal chain. The half-bridge topology is the foundational building block of DC motor drives, Class D audio amplifiers, and switched-mode power supplies.
Key features include 3.3V logic compatibility on inputs, dV/dt immunity, and tolerance to negative transient voltages on the VS pin - critical for motor drive and PFC applications where inductive kickback is common. The deadtime is internally fixed at approximately 500ns, preventing shoot-through between the high-side and low-side outputs. The integrated bootstrap switch simplifies the bill of materials by eliminating the need for an external bootstrap diode in lower-power designs.
The IR21814STRPBF utilizes Infineon's high-voltage junction-isolation (HVIC) process combined with CMOS input logic, allowing the high-side channel to level-shift signals up to 600V with minimal propagation delay. Typical propagation delay is around 180ns, with matched channel-to-channel delay to keep timing skew manageable in high-frequency switching designs. The latch-immune CMOS construction ensures stable operation in noisy industrial environments.
Typical applications include three-phase motor drive inverters when paired with three IR21814STRPBF devices, Class D audio amplifiers, switching-mode power supplies (SMPS), high-side buck converters, and uninterruptible power supplies (UPS). The 600V rating makes it suitable for 230V/400V AC line rectification-fed bridge circuits. The independent input structure also supports asymmetric drive schemes for synchronous rectifiers.
When designing with this part, the bootstrap capacitor value must be sized for the gate charge of the driven MOSFET at the chosen switching frequency. Undervoltage lockout thresholds at approximately 8.2V (rising) and 7.5V (falling) for VCC must be observed to prevent partial enhancement of the power switches during low-voltage transients.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon gate-driver family, and practical design notes not found in the standalone manufacturer datasheet.
Drop-in alternatives for IR21814STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS21814STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR21814SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR21844STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21844STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR21814STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | High and Low Side, Independent |
| Package / Case | 14-SOIC (0.154", 3.90mm Width) |
| Supply Voltage (VCC to VSS) | 10 V to 20 V |
| High-Side Floating Supply Voltage (VB to VS) | up to 600 V offset |
| Peak Source Current (typ.) | 1.9 A |
| Peak Sink Current (typ.) | 2.3 A |
| Logic Input Compatibility | 3.3 V |
| Propagation Delay (typ.) | 180 ns |
| Operating Temperature Range | -40 C to +125 C |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead Free | Yes |
| dV/dt Immunity | Yes |
| Negative VS Transient Tolerance | Yes |
IR21814STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate drive supply (10-20 V) |
| Pin 2 | HIN β Logic input for high-side gate driver output (3.3V/5V compatible) |
| Pin 3 | LIN β Logic input for low-side gate driver output (3.3V/5V compatible) |
| Pin 4 | COM β Low-side gate drive return / signal ground |
| Pin 5 | LO β Low-side gate drive output to low-side MOSFET gate |
| Pin 6 | VS β High-side floating supply return (switch node) |
| Pin 7 | VB β High-side floating supply (bootstrap to VS) |
| Pin 8 | NC β Not connected (per datasheet) |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | HO β High-side gate drive output to high-side MOSFET gate |
| Pin 12 | VS β High-side floating supply return (switch node, second bond) |
| Pin 13 | VCC β Logic and low-side gate drive supply (second bond) |
| Pin 14 | VB β High-side floating supply (second bond) |
Typical Applications
IR21814STRPBF is suitable for 6 applications: Three-Phase Motor Drive Inverter, Class D Audio Amplifier, Switched-Mode Power Supply (SMPS), Industrial Servo Drive (Low-Voltage Bus), Uninterruptible Power Supply (UPS) Inverter, PFC (Power Factor Correction) Stage.
Three-Phase Motor Drive Inverter
The IR21814STRPBF is a foundational building block for three-phase motor drive inverters, where three half-bridge drivers each control one high-side and one low-side IGBT or MOSFET in a totem-pole leg. The 600V high-side offset rating directly supports 230V and 400V AC rectified bus voltages, while the 1.9A source / 2.3A sink peak currents switch IGBT modules rated up to several hundred amps. The 180ns propagation delay and matched channel-to-channel timing minimize deadtime variation across the three phases, reducing motor torque ripple and audible switching noise. Built-in 3.3V logic compatibility eliminates the need for level-shifters from low-voltage MCUs. The integrated bootstrap switch eliminates one external diode per phase, reducing BOM cost in the inverter stage.
Recommended
Class D Audio Amplifier
In Class D audio amplifiers, the IR21814STRPBF drives complementary MOSFET pairs at the output stage that switch the audio-modulated PWM signal across the LC reconstruction filter. The 1.9A/2.3A peak drive currents provide the gate-charge current needed for fast switching at audio PWM frequencies (typically 250-500 kHz), minimizing the deadtime distortion that degrades THD performance. The 600V rating far exceeds typical audio supply rails (24-50V), giving substantial design margin. The 3.3V logic input threshold allows direct connection to modern audio DSPs and microcontrollers without additional level translation. Independent high-side and low-side control supports the asymmetric half-bridge topology commonly used in subwoofer amplifiers.
Recommended
Switched-Mode Power Supply (SMPS)
The IR21814STRPBF is widely used as the half-bridge driver in offline SMPS topologies including half-bridge converters, full-bridge converters, and LLC resonant converters. The 600V floating supply rating matches the rectified 230V AC bus (peak ~325V plus margin), making it suitable for 100W to 1kW offline power supply designs. The integrated bootstrap switch (when present in this variant) simplifies the high-side bias generation, while UVLO on both VCC and VBS protects against insufficient gate drive that would otherwise cause high switching losses. The dV/dt immunity ensures stable operation in the presence of the fast voltage transients inherent to hard-switched bridge topologies. Industrial and telecom SMPS designs frequently adopt this driver for its proven reliability.
Recommended
Industrial Servo Drive (Low-Voltage Bus)
For low-voltage industrial servo drives (24-96V bus), the IR21814STRPBF provides robust half-bridge control of the motor-phase FETs with significant voltage headroom for transient robustness. The dV/dt immunity and negative VS transient tolerance are particularly valuable in servo applications where back-EMF from the motor during deceleration can create fast voltage reversals on the phase nodes. The wide 10-20V gate drive supply range supports both 12V and 15V gate drive rails common in industrial servo designs. The 1.9A source current is sufficient to drive most sub-200A servo MOSFETs directly without external booster stages, simplifying the gate drive layout and improving switching speed.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In UPS systems, the IR21814STRPBF drives the inverter stage that converts battery DC voltage to AC mains voltage during power outages. The 600V high-side rating covers 230V AC inverter output stages with significant margin, while the latch-immune CMOS construction provides the reliability required for always-on standby operation. Three IR21814STRPBF devices form a complete three-phase inverter, with the independent input structure allowing simple microcontroller PWM generation without complex sequencing logic. The integrated undervoltage lockout prevents catastrophic shoot-through if the gate drive supply collapses during battery deep discharge. Industrial UPS designs benefit from the wide -40 to +125 C operating temperature range.
Recommended
PFC (Power Factor Correction) Stage
The IR21814STRPBF can serve as the gate driver for the boost converter section of an active power factor correction (PFC) stage in AC-DC power supplies. The high-side channel drives the boost MOSFET at the elevated DC bus voltage (typically 400V), while the low-side channel drives the synchronous rectifier MOSFET at ground reference. The 1.9A/2.3A peak drive currents support switching frequencies of 65-130 kHz typical for PFC stages. Negative VS transient tolerance handles the ringing on the boost switch node caused by the boost inductor and parasitic capacitance. The integrated bootstrap function reduces external component count compared to discrete bootstrap implementations.
Recommended
Recommended Products Summary
Engineering reference data for IR21814STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS21814STRPBF | IR21814SPBF | IR21844STRPBF | IRS21844STRPBF |
|---|---|---|---|---|---|
| Package | 14-SOIC | 14-SOIC - same | 14-SOIC - same | 14-SOIC - same | 14-SOIC - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Configuration | High/Low side, independent | High/Low side, independent | High/Low side, independent | High/Low side, with shutdown | High/Low side, with shutdown |
| High-Side Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Peak Source Current (typ.) | 1.9 A | 1.9 A | 1.9 A | 1.9 A | 1.9 A |
| Peak Sink Current (typ.) | 2.3 A | 2.3 A | 2.3 A | 2.3 A | 2.3 A |
| Supply Voltage Range (VCC) | 10-20 V | 10-20 V | 10-20 V | 10-20 V | 10-20 V |
| Logic Input Compatibility | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| RoHS / Lead Free | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Integrated bootstrap diode option in same package (vs IR2109SPBF (8-SOIC))
- Independent high-side and low-side logic inputs (vs IR21844STRPBF)
- Mature second-source with multiple drop-in options (vs Single-source competitors)
Design Notes
Bootstrap capacitor sizing is critical for the high-side gate drive supply (VB-VS). Use a ceramic capacitor of at least 0.1uF plus 10x the MOSFET gate charge (Cgs + Cgd) at the worst-case switching frequency. For example, a 100nC MOSFET at 100 kHz requires approximately 0.1uF + 100nC/20V*100kHz*2 = at least 1uF total bootstrap capacitance. Insufficient bootstrap capacitance causes VBS undervoltage lockout triggering during the high-side on-time, leading to incomplete gate enhancement and high switching losses.
Minimize the loop area between the LO output, the low-side MOSFET gate-source, and the COM pin to reduce parasitic inductance that causes gate-oscillation and possible MOSFET avalanche. Similarly, the high-side loop (HO, high-side gate-source, VS) must be kept tight. Place a 100nF ceramic bypass capacitor on VCC as close as possible to pins 1 and 13, and another 100nF on VBS as close to pins 7/14 and 6/12 as the layout allows. The exposed thermal pad on the bottom of the SOIC-14 must be soldered to a copper pour to dissipate switching losses.
Do not exceed the 600V high-side offset rating; verify that the DC bus voltage plus switching transients stays below 600V. The negative VS transient rating requires the high-side turn-off path to include a sufficiently sized Schottky diode or RC snubber to clamp negative ringing below the absolute maximum rating. Input logic signals HIN and LIN should be pulled to COM (logic low) at power-up to prevent spurious MOSFET switching if the controller has not yet initialized. Do not float the logic inputs - tie to COM through 10kohm pull-down resistors if the controlling MCU pins are high-impedance during reset.
The 14-SOIC package dissipates gate charge energy through its internal thermal resistance (approximately 80 C/W junction-to-ambient). At 200 kHz switching frequency driving a 100nC MOSFET (0.5uC charge transfer per cycle), the IC dissipates approximately 200 kHz * 100nC * 20V = 0.4W which is well within the SOIC's thermal rating. For multiple parallel MOSFETs or higher gate charges, verify that the total dissipation stays below 1W. Mounting on 1 square inch of copper pour is recommended for elevated temperature operation.
Keep the high-side gate drive traces (HO, VS, VB) physically separated from the low-side gate drive traces (LO, COM, VCC) to prevent cross-conduction through capacitive coupling. Use a ground plane under the driver but split the analog ground (COM) from the power ground (MOSFET source return) with a single-point connection near the IC. For three-phase designs using three IR21814STRPBF devices, mirror the layout pattern across all three drivers to ensure balanced parasitic inductance and timing skew.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Industrial-grade temperature range -40C to +125C; not AEC-Q100 qualified for automotive applications.
