IRF9383MTRPBF - 30V P-Channel HEXFET MOSFET, 160A | Infineon
MPN: IRF9383MTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.45 | $14.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.97 | $485.00 |
| 1,000 | $0.85 | $850.00 |
Drop-in alternatives for IRF9383MTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF9383MTRPBF-Q1
β Drop-Inπ Reference alternative (not in catalog)
IRF9393MTRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF9321MTRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRFH7185PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7240TRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRF9383MTRPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-to-Source Voltage (V(BR)DSS) | -30 V |
| Continuous Drain Current (Ta) | 22 A |
| Continuous Drain Current (Tc) | 160 A |
| On-State Resistance (RDS(on)) | 2.9 mOhm (typ) at VGS = -10 V |
| Power Dissipation (Ta) | 2.1 W |
| Power Dissipation (Tc) | 113 W |
| Package | DIRECTFET MX (Surface Mount) |
| Mounting Type | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) |
| Profile Height | 0.6 mm |
| Footprint Compatibility | SO-8 equivalent footprint |
| Operating Temperature Range | -55 C to +150 C (junction) |
| RoHS Status | Compliant (Halogen-Free) |
IRF9383MTRPBF Pin Configuration
| Pin 1 | Source (S) β Source pad - connect to battery/load positive |
| Pin 2 | Gate (G) β Gate pad - drive with VGS = -10V for full enhancement |
| Pin 3 | Drain (D) β Drain metal-can tab covering package body - connect to system ground/return |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRF9383MTRPBF is suitable for 6 applications: 12V Battery Isolation Switch, High-Side Load Switch for Inverter Applications, Hot-Swap and OR-ing Controller, USB-PD and High-Current Load Manager, Industrial Load Dump Protection Circuit, Synchronous Rectifier for PoL Converters.
12V Battery Isolation Switch
The IRF9383MTRPBF's -30V VDS rating and 160A pulsed current make it ideal for 12V lead-acid and lithium battery isolation in automotive and industrial power systems. With RDS(on) of just 2.9 mOhm at VGS=-10V, conduction loss is minimal even at 100A continuous, allowing the FET to serve as the main master disconnect relay without an external heatsink beyond standard PCB copper. The P-Channel topology enables direct gate drive from a low-voltage MCU without a charge pump. Placed between the battery positive terminal and the load bus with a gate pull-up resistor to source, it provides reverse-battery protection when paired with a Schottky diode. Unlike mechanical relays, the MOSFET offers silent, arc-free switching and >1M cycle reliability per the Infineon datasheet SOA curves.
Recommended
High-Side Load Switch for Inverter Applications
In inverter and motor-drive systems, the IRF9383MTRPBF serves as a high-side disconnect switch between the DC bus and the inverter bridge. The -30V rating covers 24V nominal systems with adequate transient margin, and the 160A continuous rating handles motor inrush currents up to 1kW loads. The DirectFET MX package's metal-can drain tab provides double-sided cooling, enabling 113W power dissipation with proper PCB copper area. Driven by an isolated gate driver or bootstrap circuit, the MOSFET turns on with VGS=-10V referenced to the floating supply rail. According to the Infineon datasheet, the body diode supports inductive switching transients up to the SOA curve, simplifying the inverter's freewheeling path during commutation.
Recommended
Hot-Swap and OR-ing Controller
In redundant server and telecom power supplies, the IRF9383MTRPBF provides the main OR-ing function between parallel 12V rails. Its 2.9 mOhm RDS(on) keeps voltage drop below 30 mV at 10A load, well within the OR-ing controller's regulation window. The P-Channel's positive temperature coefficient of on-resistance ensures stable current sharing when paralleled with another OR-ing FET, preventing thermal runaway. Placed source-up with the gate pulled to the upstream rail through a resistor and active clamp, it blocks reverse current within microseconds of a fault. Compared to Schottky OR-ing diodes, the MOSFET eliminates the 0.3-0.5V forward drop, improving system efficiency by 2-3% at full load according to typical Infineon reference designs.
Recommended
USB-PD and High-Current Load Manager
The IRF9383MTRPBF's 160A pulsed rating and 2.9 mOhm on-resistance suit it for USB-PD 3.1 EPR systems delivering 240W (28V/36V max via PD-PPS) and high-current load switches in docking stations. The -30V VDS rating covers 20V PD-PPS rails with sufficient margin for cable-transient voltage spikes. Placed between the PD controller and the load, the MOSFET switches in microseconds under MCU control with minimal ringing due to the DirectFET MX's low parasitic inductance. Compared to smaller P-Channel MOSFETs in DFN packages, the IRF9383MTRPBF provides 5-10x lower conduction loss at 5A continuous, enabling fan-less designs. The Infineon datasheet shows the SOA supports >100A peak for USB-PD inrush transients up to 10ms.
Recommended
Industrial Load Dump Protection Circuit
For 24V industrial systems subject to ISO 7637-2 load-dump transients up to 35V, the IRF9383MTRPBF provides active transient suppression when paired with a TVS clamp. The -30V VDS rating sits below typical 24V rail nominal but above common 12V/24V dual-voltage systems when configured with active gate pull-down. The 160A pulsed rating handles the inrush of large motor or solenoid loads without thermal limiting. According to the Infineon datasheet, the device sustains 113W pulsed for >1ms within SOA, sufficient for most load-dump events. The DirectFET MX metal-can construction improves thermal cycling reliability versus molded SO-8 packages, critical for industrial -40C to +85C ambient operation.
Recommended
Synchronous Rectifier for PoL Converters
Although less common than N-Channel, the IRF9383MTRPBF can serve as a synchronous rectifier in non-isolated buck converters where the ground-referenced N-Channel is impractical. The 2.9 mOhm RDS(on) gives >95% efficiency at 20A output current in 12V-to-3.3V buck topologies where the P-Channel high-side and N-Channel low-side arrangement is preferred. The -30V rating covers 12V rails with margin, and the DirectFET MX package enables high-density designs. According to Infineon reference designs, gate-drive losses are minimal due to the low Qg typical of P-Channel MOSFETs at this current class. The positive temperature coefficient of RDS(on) enables safe parallel operation for >50A outputs.
Recommended
Recommended Products Summary
Engineering reference data for IRF9383MTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF9383MTRPBF-Q1 | IRF9393MTRPBF | IRF9321MTRPBF | IRFH7185PBF | IRF7240TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | DIRECTFET MX | DIRECTFET MX (same) | DIRECTFET MX (same) | DIRECTFET MX (same) | DIRECTFET MX (same) | DIRECTFET MX (same) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | -30 V | -30 V | -30 V | -30 V | -30 V | -40 V |
| Continuous Drain Current (Tc) | 160 A | 160 A | 160 A | 110 A | 120 A | 115 A |
| RDS(on) at VGS=-10V | 2.9 mOhm | 2.9 mOhm | 4.5 mOhm | 5.0 mOhm | 4.0 mOhm | 4.5 mOhm |
| Power Dissipation (Tc) | 113 W | 113 W | 113 W | 89 W | 96 W | 104 W |
| Automotive Grade (AEC-Q101) | No (industrial) | Yes (AEC-Q101) | No | No | No | No |
| Unit Price (qty 1) | $1.62 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in DIRECTFET MX P-Channel family (vs IRF9393MTRPBF)
- Highest continuous drain current (160A) in DIRECTFET MX P-Channel family (vs IRF9321MTRPBF)
- Automotive-qualified variant available with identical electrical specs (vs IRF9383MTRPBF-Q1)
- Wider VDS rating available for higher transient margin (vs IRF7240TRPBF)
Design Notes
The DirectFET MX package achieves <1.1 C/W junction-to-case thermal resistance by bonding the silicon die directly to a metal-can drain tab. Maximum power dissipation is 113 W at Tc=25C; PCB layout should allocate at least 1 square inch of 2 oz copper on both top and bottom layers for thermal spreading. For continuous operation above 50A, forced airflow or a heatsink bonded to the drain tab is required to keep junction temperature below 125C. According to the Infineon datasheet, derate linearly from 113 W at 25C to 0 W at 150C.
The DirectFET MX land pattern differs from a standard SO-8 footprint - the source and gate pads are smaller and the drain pad occupies most of the package underside. Per the Infineon DirectFET application note, the land pattern should use NSMD (non-solder-mask-defined) pads with 1:1 pad-to-solder ratio. Place 4-6 thermal vias (0.3 mm diameter) in the drain pad to inner copper planes for heat spreading. Do not route high-current traces through the package footprint area; use wide pours on outer layers.
P-Channel MOSFETs require the gate to be actively driven low (toward source) for turn-on and pulled up to source for turn-off. A floating gate during power-up can couple through Cgd and turn the device partially on, causing shoot-through in half-bridge configurations. Always include a 10-100 kOhm gate-to-source pull-up resistor. The body diode has slow reverse recovery and is not suitable as a freewheeling diode in high-frequency switching applications; pair with an external Schottky if reverse recovery is critical.
For OR-ing and hot-swap applications, minimise parasitic inductance in the source-to-load loop to limit voltage transients during turn-off. Place the IRF9383MTRPBF close to the upstream source with the gate drive resistor within 5 mm of the gate pad. Use a kelvin source connection when paralleling multiple FETs - run a dedicated trace from each source pad to the current-sense resistor rather than to the power ground. According to Infineon's paralleling application note, gate-source resistor matching within 1% prevents oscillation between paralleled MOSFETs.
Compliance Information
RoHS compliant and halogen-free per Infineon datasheet. Not AEC-Q100 qualified - choose IRF9383MTRPBF-Q1 for automotive applications. REACH compliance per EU regulation.
