FDP030N06 - 60V N-Channel MOSFET 3.2mOhm TO-220 | onsemi
MPN: FDP030N06 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.1 | $3.10 |
| 10 | $2.79 | $27.90 |
| 100 | $2.45 | $245.00 |
| 500 | $2.15 | $1,075.00 |
| 1,000 | $1.89 | $1,890.00 |
FDP030N06 Overview
A power MOSFET is a voltage-controlled semiconductor switch used at the top of the discrete power device hierarchy within power management systems. Unlike bipolar transistors, MOSFETs exhibit essentially static gate drive requirements and very low conduction losses when driven fully on, making them the dominant choice for switch-mode power conversion above a few watts.
Key features of the FDP030N06 include Fairchild PowerTrench trench technology for extremely low RDS(on) (2.6 mOhm typical at the specified test current), fast switching speed, low gate charge, 100% avalanche testing, and high power handling capability of up to 231W at Tc=25C. These characteristics minimize conduction and switching losses in high-current converters.
Technically, the trench-gate structure multiplies channel density per unit die area, dramatically reducing specific on-resistance compared with planar MOSFETs. Lot-to-lot process variation is minimized for robust device performance. Per the manufacturer datasheet, typical applications are power supplies and general high-current switching circuits such as DC-DC converters, synchronous rectification, and motor control.
Typical applications include switch-mode power supplies, battery-powered high-current motor drives, and low-side switching in welding and inverter equipment, where the 60V rating and 3.2 mOhm RDS(on) directly reduce heat-sinking requirements.
Design consideration: derating is essential; the headline 120A and 231W ratings apply at a case temperature of 25C, so thermal design, not the die, usually limits usable current in through-hole TO-220 designs.
This page synthesizes distributor availability data, cross-reference findings, and practical design notes not consolidated in the manufacturer datasheet.
Drop-in alternatives for FDP030N06 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with FDP030N06 (same form factor and footprint) — differing in Package, Technology, Continuous Drain Current (ID) at Tc=25C, FET Type, Power Dissipation (PD) at Tc=25C.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
FDP030N06BF102
✅ Drop-In📋 Reference alternative (not in catalog)
FDP030N06
✅ Drop-In✓ In Stock
$1.89 / Unit
View Datasheet →IRFB7534PBF
✅ Drop-In✓ In Stock
$1.85 / Unit
View Datasheet →IRFZ44NPBF
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →FDP030N06 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET |
| Technology | PowerTrench (Trench) |
| Drain to Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) @ 25C | 120 A (Tc) |
| Continuous Drain Current (datasheet rating) | 193 A (Tc, datasheet title rating) |
| RDS(on) Max @ Id, Vgs | 3.2 mOhm |
| RDS(on) Typ | 2.6 mOhm |
| Power Dissipation (Tc) | 231 W (Tc) |
| Gate Drive Type | Standard level gate drive |
| Switching Speed | Fast |
| Gate Input Resistance | Low gate input resistance (low gate charge) |
| Avalanche Test | 100% avalanche tested |
| Package | TO-220-3 (3+Tab) |
| Mounting Type | Through Hole |
| Packing | Tube |
| Typical Applications | Power supply, switching applications |
FDP030N06 Pin Configuration
| Pin 1 | Gate — Gate terminal; drive with appropriate Vgs (standard level gate drive) |
| Pin 2 | Drain — Drain terminal; also connected to the TO-220 metal tab |
| Pin 3 | Source — Source terminal; current return path |
Safe Operating Area (Tc = 25C, estimated from 231W / 120A limits)
Typical Applications
FDP030N06 is suitable for 6 applications: Switch-Mode Power Supplies, DC Motor Drives, Battery-Powered Inverters, Low-Side Switching and Load Switches, Synchronous Rectification, Welding and Heating Equipment.
Switch-Mode Power Supplies
The FDP030N06 fits primary-side and synchronous-rectification stages in switch-mode power supplies operating from 24V to 48V buses, where its 60V Vdss provides headroom for reflected spikes and its 3.2 mOhm maximum RDS(on) keeps conduction losses low. In a forward or half-bridge converter carrying 30A, conduction loss is approximately 2.9W at maximum RDS(on), which a modest TO-220 heatsink can manage. The PowerTrench structure also delivers low gate charge for fast switching at 100-300 kHz, reducing switching loss, while 100% avalanche testing guards against leakage-inductance transients that occur in every real transformer design.
Recommended
DC Motor Drives
For DC motor and actuator drives in the tens of amperes, the FDP030N06 provides the low RDS(on) (3.2 mOhm max) needed to limit heat in low-side and half-bridge switches, plus a 60V rating that tolerates inductive flyback and load-dump style transients on 12V and 24V systems, especially combined with free-wheeling diodes. At 40A, estimated conduction loss is about 5W per device. The through-hole TO-220 package allows bolting directly to a chassis heatsink, valuable in repairable industrial equipment, and the standard level gate drive interfaces directly with common half-bridge gate drivers such as the IRS2104 or IRS4427.
Recommended
Battery-Powered Inverters
In 12V and 24V battery-powered inverters for solar, automotive, and portable power stations, the FDP030N06 serves as both switching FET and synchronous rectifier. Its 60V Vdss covers battery charging transients, and the 2.6 mOhm typical on-resistance minimizes the dominant conduction loss term at inverter input currents that routinely exceed 50A at full load; estimated conduction loss at 60A is about 9.4W maximum per device. The TO-220 through-hole format simplifies paralleling several devices on a shared heatsink to divide current, and the 100% avalanche testing adds robustness against wiring-inductance energy during load steps.
Recommended
Low-Side Switching and Load Switches
As a general low-side switch for resistive, inductive, and capacitive loads on 12V to 48V rails, the FDP030N06 combines an easy-to-drive standard-level gate with 3.2 mOhm maximum on-resistance, so even 100A peak pulses generate modest instantaneous loss (I^2R at 100A pulse = ~32W, thermally acceptable only as a short pulse given the 231W Tc rating). The through-hole TO-220-3 package enables hand assembly and field service in test fixtures and industrial control panels. Its low gate input resistance and charge reduce the drive current needed from logic-level driver circuits at moderate switching frequencies.
Recommended
Synchronous Rectification
In synchronous buck converters and secondary-side rectification where the switch replaces a Schottky diode, the FDP030N06 cuts rectification loss from roughly 0.5V x I (diode) to I^2 x 0.0032 ohm. At 30A this is about 2.9W versus 15W for a 0.5V diode - an estimated 5x reduction. The 60V rating suits 24V-to-12V and 48V buses, and the fast body-diame recovery characteristic of PowerTrench trench devices limits dead-time diode losses. Designers should minimize dead time and verify body-diode conduction intervals, since through-hole TO-220 inductance slightly limits practical switching frequency compared with SMD alternatives.
Recommended
Welding and Heating Equipment
Welding machines, induction heaters, and resistive heating controllers switch high currents at low duty-adjusted frequencies, a regime where the FDP030N06's 193A-class die, 3.2 mOhm RDS(on), and 231W (Tc) thermal capacity are well matched. Multiple TO-220 devices paralleled on a large finned heatsink share current naturally because the positive temperature coefficient of RDS(on) promotes balance. The 60V avalanche rating absorbs cable-inductance spikes on long welding leads. Estimated: ten devices at 20A each dissipate about 1.3W each at typical RDS(on), keeping junction temperatures safely low even in thermally harsh shop environments.
Recommended
Recommended Products Summary
Engineering reference data for FDP030N06 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | FDP030N06BF102 | FDP030N06 (ISC) | IRFB7534PBF | IRFZ44NPBF |
|---|---|---|---|---|---|
| Package | TO-220-3 (3+Tab), Through Hole | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same |
| Brand | onsemi (Fairchild Semiconductor) | onsemi | Inchange Semiconductor | Infineon (IR) | Infineon (IR) |
| Vdss | 60 V | 60 V | 60 V | 60 V | 55 V |
| Technology | PowerTrench trench gate | PowerTrench trench gate - same die family | Trench gate (second source) | HEXFET trench gate | HEXFET (older generation) |
| Drop-in Compatibility | Reference part | Pin-to-pin, same die family | Pin-to-pin, second source | Pin-to-pin, verify gate charge vs driver | Pin-to-pin, but ~5x conduction loss |
Key Differentiators
- Very low on-resistance for its generation (vs IRFZ44NPBF)
- Higher voltage margin than common 55V alternatives (vs IRFZ44NPBF)
- Multi-source availability (vs IRFB7534PBF)
Design Notes
The 231W and 120A headline ratings apply at Tc=25C with a perfect heat sink; linear derating to zero at maximum junction temperature is mandatory. Estimated: at 50A continuous and 3.2 mOhm max RDS(on), conduction loss is I^2R = 8W, which already requires a substantial heatsink on the TO-220 tab plus thermal paste. Design to case temperatures of 80-100C or below and verify with an IR camera under worst-case load.
In through-hole TO-220 layouts, keep the gate loop short: place the gate driver and gate resistor close to pin 1 to limit parasitic inductance and gate ringing. Use a gate resistor of 4.7 to 20 ohms to damp oscillation at the cost of slightly slower switching. On the power path, widen traces or use bus bar for drain/source currents above 30A, since the TO-220 lead frame, not the die, limits practical current in bare PCB designs.
The device is 100% avalanche tested, but avalanche rating is a safety margin, not a design operating mode - always clamp inductive flyback with a diode or snubber rather than relying on avalanche energy each cycle. When paralleling TO-220 parts, ensure symmetric thermal mounting so the positive RDS(on) temperature coefficient can equalize currents. Substituting a 55V part such as IRFZ44N in a 48V system leaves no margin for transients; keep Vds margin of at least 20% above worst-case bus voltage.
Compliance Information
Compliance status not stated in the provided verified web data; confirm against the current onsemi product page or certificate of conformance.
