IRFR24N15DTRPBF - 150V 24A N-Channel HEXFET MOSFET | Infineon DPAK
MPN: IRFR24N15DTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.76 | $1.76 |
| 10 | $1.58 | $15.80 |
| 100 | $1.32 | $132.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
IRFR24N15DTRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify signals in power electronics. Within the taxonomy, a power MOSFET belongs to discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. N-channel MOSFETs such as the IRFR24N15DTRPBF conduct current when a positive gate-to-source voltage is applied, and they are the dominant choice for low-side switching because their lower on-resistance per die area delivers higher efficiency than equivalent P-channel parts. The HEXFET process technology used here is Infineon's planar-cell architecture optimized for ruggedness and switching performance at elevated voltages.
Key features include 150 V VDS(max), 24 A ID(max) at Tc=25 C, 0.082 ohm RDS(on)(max), a Β±30 V gate-source rating, total gate charge (Qg) of approximately 30 nC, and a single-pulse avalanche rating defined in the manufacturer's datasheet. The TO-252AA (DPAK) package provides a low thermal resistance path through the tab and supports surface-mount assembly while maintaining high-current capability. The part is offered with a Pb-free lead finish and is RoHS compliant.
Internally, the IRFR24N15DTRPBF uses a planar DMOS cell structure with an optimized body diode for unclamped inductive switching. Its relatively low gate charge supports fast switching at moderate frequencies, and the wide safe operating area makes it suitable for hard-switched topologies. The combined ruggedness and avalanche rating make it a common choice for industrial power applications.
Typical applications include DC-DC converters, three-phase motor drives, industrial automation power stages, battery management and protection circuits, and solar inverters. The 150 V rating provides comfortable headroom for 48 V bus systems and rectified AC supplies.
When designing with this MOSFET, ensure gate-drive voltage is at least 10 V to fully enhance the channel and minimize conduction loss. A small gate-source resistor (typically 10-100 ohm) is recommended to suppress ringing, and the tab thermal pad should be soldered to a sufficient copper area to stay within the thermal rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Drop-in alternatives for IRFR24N15DTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFR24N15DTRPBF-P
β Drop-Inπ Reference alternative (not in catalog)
IRFR24N15D
β Drop-Inπ Reference alternative (not in catalog)
FQB24N15
β Drop-Inπ Reference alternative (not in catalog)
STD24N15
β Drop-Inπ Reference alternative (not in catalog)
NTD24N15
β Drop-Inπ Reference alternative (not in catalog)
IRFR24N15DTRPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) | 24 A (Tc) |
| Power Dissipation (PD) | 140 W (Tc) |
| Drain-Source On-Resistance (RDS(on)) | 0.082 ohm (max) |
| Gate-Source Voltage (VGS) | Β±30 V |
| Total Gate Charge (Qg) | 30 nC (typical, per datasheet) |
| Operating Temperature Range | -55 C to +175 C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant |
| Configuration | Single |
| Polarity | N-Channel |
IRFR24N15DTRPBF Pin Configuration
| Pin 1 | Gate β Gate drive input; 10 V typical enhancement |
| Pin 2 | Drain β Drain terminal (also connected to metal tab) |
| Pin 3 | Source β Source terminal; power return path |
| Pin Tab | Drain β Metal tab is electrically tied to Drain; serves as primary thermal pad |
Safe Operating Area (per Infineon datasheet)
Typical Applications
IRFR24N15DTRPBF is suitable for 6 applications: DC-DC Converters, Three-Phase Motor Drives, Industrial Automation Power Stages, Battery Management and Protection, Solar Inverters and Optimizers, Uninterruptible Power Supplies (UPS).
DC-DC Converters
The IRFR24N15DTRPBF's 150 V VDS rating and 0.082 ohm RDS(on) make it well-suited for the primary-side switch in 48 V buck or boost converters. Its 24 A continuous drain current at Tc=25 C supports several-hundred-watt power stages with appropriate thermal management. Placed between the input bus and the transformer or inductor, it operates efficiently at moderate switching frequencies. According to Infineon's HEXFET datasheet, the low Qg of approximately 30 nC reduces gate-drive loss compared to higher-voltage alternatives. Design tip: a 100 ohm gate-source resistor dampens ringing at high dV/dt.
Recommended
Three-Phase Motor Drives
The IRFR24N15DTRPBF serves as a low-side switch in three-phase inverter bridges driving 48 V BLDC or PMSM motors. Its 24 A continuous current and 150 V breakdown provide adequate headroom for back-EMF transients from sub-100 V motors. The HEXFET avalanche rating handles the unclamped inductive switching inherent in PWM motor commutation. Per the Infineon datasheet, the DPAK tab provides a robust thermal path when soldered to sufficient copper pour. Estimated: with 1 square inch of 2 oz copper, theta_JA drops to ~50 C/W allowing continuous currents up to 8-10 A without additional cooling.
Recommended
Industrial Automation Power Stages
For industrial 24 V or 48 V power distribution and relay-replacement switching, the IRFR24N15DTRPBF provides a rugged, RoHS-compliant surface-mount solution. Its 150 V rating comfortably handles inductive transients from solenoids and motor loads, while the 24 A current supports multi-amp relay-style switching. According to the Infineon datasheet, the part is rated for -55 C to +175 C operation, suitable for sealed industrial enclosures. The DPAK package simplifies automated SMT assembly versus TO-220 through-hole parts.
Recommended
Battery Management and Protection
The IRFR24N15DTRPBF is well-matched to battery-pack protection and load-disconnect switches in 48 V lithium-ion or lead-acid battery systems. Its 24 A rating covers multi-amp discharge paths, while the 150 V rating protects against transient overvoltage during fault conditions. The HEXFET technology provides low on-state loss during normal conduction, maximizing battery efficiency. Per Infineon's product documentation, the part is fully RoHS compliant and lead-free, suitable for battery-pack assemblies requiring JEDEC reflow profiles.
Recommended
Solar Inverters and Optimizers
In low-voltage solar micro-inverters and module-level power optimizers, the IRFR24N15DTRPBF serves as the primary-side switch on the DC-DC stage converting 30-60 V panel output to a higher intermediate bus. Its 150 V breakdown comfortably exceeds the maximum power-point voltage of 60-cell panels, and the 24 A current supports several-hundred-watt stages. The HEXFET avalanche ruggedness from Infineon's planar cell process absorbs the energy from transformer leakage inductance at turn-off. Design tip: pair with a synchronous rectifier for higher conversion efficiency above 200 W.
Recommended
Uninterruptible Power Supplies (UPS)
The IRFR24N15DTRPBF is appropriate for low-voltage UPS modules that switch 48 V battery banks to AC inverter stages. Its 24 A continuous current and 150 V rating cover the typical battery-bus voltage window of 36-60 V with margin. The HEXFET technology's avalanche rating provides robustness during battery-bus short-circuit transients. According to Infineon's HEXFET datasheet, the part is qualified for industrial temperature ranges. Mount the DPAK tab to a copper pour of at least 0.5 square inch to keep junction temperature rise manageable at full load.
Recommended
Recommended Products Summary
Engineering reference data for IRFR24N15DTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR24N15DTRPBF-P | IRFR24N15D | FQB24N15 | STD24N15 | NTD24N15 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | onsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID) | 24 A (Tc) | 24 A (Tc) | 24 A (Tc) | 24 A (Tc) | 24 A (Tc) | 24 A (Tc) |
| On-Resistance (RDS(on)) | 0.082 ohm | 0.082 ohm | 0.082 ohm | 0.10 ohm (typ) | 0.085 ohm | 0.090 ohm (typ) |
| Gate Charge (Qg) | 30 nC | 30 nC | 30 nC | 35 nC | 32 nC | 33 nC |
| Technology | HEXFET | HEXFET | HEXFET | QFET | STripFET | QFET |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes | Yes |
| Qty-1 Price (as of 2026-09-15) | $1.76 | ~$1.85 | ~$1.76 | ~$1.50 | ~$1.60 | ~$1.40 |
Key Differentiators
- Infineon HEXFET planar-cell technology for proven ruggedness (vs FQB24N15 (onsemi QFET))
- 150 V rating provides comfortable margin for 48 V and 60 V rectified AC systems (vs IRFR3711 (100 V, higher current))
- Surface-mount DPAK enables automated assembly versus TO-220 alternatives (vs IRFB4020PBF (TO-220 through-hole))
Design Notes
Estimated: at ID=24 A and RDS(on)=0.082 ohm, the IRFR24N15DTRPBF dissipates approximately 47 W at full current, exceeding its 140 W Tc rating requires substantial cooling. With a DPAK tab soldered to 1 square inch of 2 oz copper, theta_JA is approximately 50 C/W, allowing about 2.5 W dissipation at 50 C ambient rise. For continuous operation above 10 A, add a heatsink or expand the copper pour to 4+ square inches. Always reference the datasheet SOA curve for pulsed operation.
The DPAK tab is electrically the Drain terminal. Route high-current drain traces directly to the tab pad and use a thermal via array under the tab to spread heat into inner copper layers. Place the gate-drive return trace directly to the source pin (pin 3) to minimize source-inductance-induced ringing. A 100 ohm gate resistor is recommended to dampen high-frequency oscillations at dV/dt above 5 kV/us.
Do not exceed the +/-30 V VGS absolute maximum rating; gate drive must be clamped with a Zener diode if driven from a higher-voltage gate supply. The body diode has limited reverse-recovery characteristics, so for synchronous-rectifier or bridge topologies add an external anti-parallel Schottky or use a co-packaged part. Do not operate in linear mode (high VDS, high ID) without referencing the SOA curve; thermal runaway can occur within milliseconds.
Compliance Information
RoHS compliant per Infineon product page. Lead-free terminal finish suitable for JEDEC J-STD-020 reflow profiles up to 260 C peak. Not AEC-Q100 qualified; for automotive applications use an AEC-Q101 qualified equivalent or the automotive-grade IRFR24N15D variant if available.
