IRS2106STRPBF - 600V Half-Bridge Gate Driver, 0.6A SOIC-8 | Infineon
MPN: IRS2106STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.42 | $14.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.78 | $780.00 |
IRS2106STRPBF Overview
A half-bridge gate driver is a specialized power-management IC that translates low-voltage PWM control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch the high-side and low-side MOSFETs/IGBTs in a half-bridge, full-bridge, or three-phase inverter. In the power-electronics hierarchy, the IRS2106STRPBF sits between the control IC and the discrete switching devices, providing level shifting, bootstrap drive for the high side, and gate-drive strength that controllers alone cannot deliver. Its proprietary HVIC and latch-immune CMOS processes enable monolithic integration of the high-voltage level shifter with low-voltage logic.
Key specifications include 600 V maximum offset voltage on the high-side channel, 10 V to 20 V gate-drive supply (VCC), up to 25 V VBS bootstrap supply, 200 ns typical turn-on/off propagation delay, and 50 ns built-in deadtime matching between the two channels. The SD (shutdown) input disables both outputs simultaneously, providing a clean way to implement fault protection. Under-voltage lockout (UVLO) on both VCC and VBS prevents the power switches from being driven into their linear region during low-supply conditions, a frequent cause of MOSFET/IGBT thermal failures.
The IRS2106STRPBF is intended for motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, DC-DC converters, and class-D audio amplifiers. Its 600 V rating covers 110/120/220/230 V AC rectified rails (up to about 400 V DC bus) and 400 V class industrial motor-drive buses. The 0.6 A sink current is sufficient for MOSFETs in the low-to-mid current range; higher-power IGBTs may require an external buffer such as the IR2128 or IXDN609.
When designing with the IRS2106STRPBF, the bootstrap diode and capacitor form the high-side supply and must be sized for the worst-case PWM duty cycle; a slow reverse-recovery diode or undersized capacitor causes high-side UVLO and shoot-through. Place the bootstrap capacitor as close to pins VBS and VS as possible. The SD pin should be pulled high during normal operation; an RC delay of a few microseconds on SD provides clean power-on behavior.
This page consolidates distributor pricing, package-aware drop-in alternatives, and PCB layout considerations that are not all present in the datasheet application diagram.
Drop-in alternatives for IRS2106STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS2106STRPBF (same form factor and footprint) β differing in Package, Input Logic Compatibility, RoHS Status, Driver Configuration, MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2106SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2109SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2109SPBF
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet βIR2304SPBF
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet βIRS2110SPBF
β Drop-Inβ In Stock
$0.72 / Unit
View Datasheet βIRS2117SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2106STRPBF Maximum Ratings & Electrical Characteristics
| Driver Configuration | High-Side and Low-Side (Half-Bridge) |
| Number of Outputs | 2 |
| Logic Type | Non-Inverting |
| Offset Voltage (High-Side) | 600 V (max) |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Bootstrap Supply (VBS) | Up to 25 V |
| Source Current (IO+) | 0.29 A (typical) |
| Sink Current (IO-) | 0.6 A (typical) |
| Turn-On Propagation Delay (ton) | 200 ns (typical) |
| Turn-Off Propagation Delay (toff) | 200 ns (typical) |
| Deadtime | 50 ns (typical, internal matching) |
| Shutdown Input (SD) | Yes (active-low, single pin) |
| UVLO (VCC and VBS) | Yes |
| Operating Temperature | -40C to +125C |
| Package | 8-SOIC (3.90 mm width) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel |
| RoHS Status | Compliant |
| MSL Level | 2 |
IRS2106STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate-drive supply (10V to 20V) |
| Pin 2 | HIN β High-side logic input (non-inverting, CMOS/TTL compatible) |
| Pin 3 | LIN β Low-side logic input (non-inverting, CMOS/TTL compatible) |
| Pin 4 | SD β Shutdown input (active-low, disables both outputs) |
| Pin 5 | GND β Logic and low-side return |
| Pin 6 | LO β Low-side gate-drive output |
| Pin 7 | VS β High-side floating supply return |
| Pin 8 | HO β High-side gate-drive output |
Typical Applications
IRS2106STRPBF is suitable for 7 applications: Three-Phase Motor Drive Inverter, Switch-Mode Power Supply (SMPS) Half-Bridge Converter, Uninterruptible Power Supply (UPS) and Solar Inverter, Class-D Audio Amplifier Output Stage, DC-DC Buck-Boost Converter High-Side Drive, Electric Vehicle (EV) Auxiliary DC-DC Converter, Industrial Induction Heating and Welding.
Three-Phase Motor Drive Inverter
The IRS2106STRPBF is a cost-effective choice for low- to mid-power three-phase motor drive inverters up to approximately 1 kW. Its 600 V offset rating covers 110/220/230 V AC rectified bus voltages (up to 400 V DC), and three IRS2106STRPBF ICs - one per phase - provide the six gate-drive channels needed to switch a 3-phase IGBT or MOSFET bridge. The 0.6 A sink current is sufficient for low-to-mid current MOSFETs and small IGBTs used in appliance drives, fan controllers, and small industrial pumps. Designers pair the IRS2106STRPBF with the IR2132SPBF (also on the XAIPART Site MPN list) for 3-phase current-sense and fault integration. The 200 ns propagation delay is fast enough for switching frequencies up to 20 kHz; above 50 kHz, upgrade to the IRS2110SPBF to reduce switching losses.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge Converter
The IRS2106STRPBF drives the primary-side half-bridge in LLC, phase-shift full-bridge, and resonant SMPS topologies commonly used in server, telecom, and industrial power supplies. Its 600 V rating covers 400 V DC bus designs, and the half-bridge configuration (high-side + low-side in one IC) simplifies layout compared to using two separate high-side and low-side drivers. The 50 ns internal deadtime matching between channels prevents cross-conduction (shoot-through) and protects the primary MOSFETs. Pair with a UCC25640 LLC controller (TI) for resonant converters, or a UCC28950 phase-shift controller for full-bridge. The 0.6 A sink current is suitable for primary MOSFETs with Qg up to about 100 nC at 100 kHz - beyond that, choose the IRS2110SPBF.
Recommended
Uninterruptible Power Supply (UPS) and Solar Inverter
The IRS2106STRPBF is well matched to UPS and small solar inverter half-bridge stages. The 600 V offset rating handles 400 V DC battery or PV bus voltages, and the SD (shutdown) pin enables fast fault response - critical for short-circuit protection in a battery-coupled system. In a 1 kW microinverter, two IRS2106STRPBF ICs drive the DC-AC full bridge, while a third drives the high-side synchronous rectifier. Designers combine the IRS2106STRPBF with current-sense amplifiers such as the INA240 for cycle-by-cycle current limiting. The 25 V VBS maximum allows a regulated 15 V bootstrap supply with a small SS34 diode. For higher-power three-phase string inverters above 5 kW, the IRS2110SPBF or the 2ED2304S06FXUMA1 isolated driver is recommended.
Recommended
Class-D Audio Amplifier Output Stage
The IRS2106STRPBF drives the output MOSFETs in mid-power Class-D audio amplifiers up to about 200 W per channel. The 0.6 A sink current is fast enough for the 250-500 kHz PWM switching frequencies used in audio amplifiers, and the 50 ns internal deadtime matching between high-side and low-side outputs prevents shoot-through that would otherwise cause audible distortion or MOSFET failure. The SD pin is used for click-and-pop suppression by holding both outputs off during power-up/down. Pair with a TPA3251 or TAS5613 Class-D controller (TI) for a complete amplifier. The 8-SOIC footprint allows the IRS2106STRPBF to be placed close to the output MOSFETs, minimizing gate-loop inductance. For subwoofer or higher-power designs, choose the IRS2110SPBF for its 2 A drive current.
Recommended
DC-DC Buck-Boost Converter High-Side Drive
The IRS2106STRPBF can be used as a high-side + low-side driver pair in buck, boost, and buck-boost converters where the high-side switch needs level-shifted drive up to 600 V. In a 400 V to 48 V LLC or phase-shift DC-DC stage, a single IRS2106STRPBF replaces two single-channel drivers and provides the matched deadtime that prevents shoot-through. The 200 ns propagation delay is fast enough for 100 kHz operation; above 250 kHz, consider the IR2304SPBF which has integrated bootstrap MOSFETs to reduce component count. The non-inverting logic interface works with most analog PWM controllers. Designers often pair this IC with the IR2128SPBF (also on the XAIPART Site MPN list) when a high-current buffer is needed to drive very large IGBTs downstream.
Recommended
Electric Vehicle (EV) Auxiliary DC-DC Converter
The IRS2106STRPBF is used in EV auxiliary DC-DC converters that step down the 400 V traction battery to 12 V or 48 V for body electronics. Its 600 V rating covers the 400 V DC bus directly, and the half-bridge configuration simplifies the layout of the primary-side switches. The SD pin enables fast shutdown in response to overcurrent or overtemperature faults detected by the BMS. In a 3 kW auxiliary converter, two IRS2106STRPBF ICs drive the primary full-bridge. While the IRS2106STRPBF is not AEC-Q100 qualified, it is widely used in 12 V accessory subsystems where automotive-grade is not required. For traction inverter main drive, the ISO 26262-qualified 1ED020I12B2XUMA1 isolated driver is recommended instead.
Recommended
Industrial Induction Heating and Welding
The IRS2106STRPBF drives the resonant tank inverter in low-power industrial induction heaters and welding equipment operating from 110/220 V AC mains. The 600 V offset rating covers 400 V DC bus, and the 0.6 A sink current is sufficient for the IGBTs used in 1-2 kW induction cooktops and small welding inverters. The 50 ns deadtime matching prevents cross-conduction in the resonant tank, which would otherwise waste power and cause IGBT thermal runaway. The SD pin accepts a hardware interlock signal to shut off RF energy if a coolant flow switch opens. For higher-power 5-25 kW industrial welders, the IRS2110SPBF or 2ED2304S06FXUMA1 with external buffer stages is required.
Recommended
Recommended Products Summary
Engineering reference data for IRS2106STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2106SPBF | IRS2109SPBF | IR2109SPBF | IR2304SPBF | IRS2110SPBF | IRS2117SPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Driver Configuration | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | Single High-Side only |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Source Current (IO+) | 0.29 A | 0.29 A | 0.29 A | 0.29 A | 0.29 A | 2.0 A | 0.29 A |
| Sink Current (IO-) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 2.0 A | 0.6 A |
| Shutdown Pin Function | SD (active-low) | SD (active-low) | DT (deadtime) | DT (deadtime) | SD (active-low) | SD (active-low) | N/A (single HS only) |
| Integrated Bootstrap MOSFET | No (external diode required) | No | No | No | Yes | No | No |
Key Differentiators
- Single shutdown pin (SD) for hardware fault disable (vs IRS2109SPBF)
- Stronger 0.6 A sink current than source (0.29 A) (vs IRS2109SPBF (identical source/sink))
- Lower cost and wider availability than IRS2110SPBF (vs IRS2110SPBF)
Design Notes
Place the bootstrap capacitor (CBS, typically 0.1uF to 1uF ceramic) directly between pins VBS (pin 8) and VS (pin 7), with the loop area minimized to under 50 mm^2. Use a low-ESR ceramic such as X7R 25V rated. A slow-recovery bootstrap diode (such as SS34 or UF4007) is required from VCC to VBS - ultrafast diodes cause VBS to droop during high-side turn-on due to reverse-recovery losses. Keep the gate-drive loop (HO to VS to gate to source of high-side MOSFET) as short as possible to limit ringing below 50 V to avoid dv/dt-induced shoot-through.
The bootstrap capacitor must be sized for the worst-case PWM duty cycle. Estimate: CBS >= Qg_total / dV, where Qg_total is the total gate charge of the high-side MOSFET and dV is the allowable VBS droop (typically 0.5V to 1V before UVLO triggers at about 8V). For example, a MOSFET with Qg = 50 nC at dV = 0.5V requires CBS >= 100 nF, so a 220 nF or 470 nF ceramic provides 2x-4x margin. The bootstrap diode must block the full DC bus voltage (use 600V or higher rated), and its reverse-recovery time directly limits the maximum high-side on-time at high duty cycles.
Do not let the SD pin float - if unused, tie it high (above 2.5V) to VCC through a 10k resistor, or directly to VCC. A floating SD pin picks up noise and randomly disables both outputs, causing MOSFET body-diode conduction and audible/visible switching anomalies. Also, ensure VCC has at least 1uF of local ceramic decoupling within 5 mm of pin 1; VCC droop below the UVLO threshold (about 8V) disables both outputs and can cause shoot-through if the controller has not inserted proper deadtime. The high-side bootstrap UVLO has a similar threshold near 8V on VBS relative to VS.
At 200 kHz switching with a 50 nC gate charge MOSFET, the IRS2106STRPBF dissipates approximately 0.6 W from gate-drive losses alone (P = VCC * Qg * fsw = 15V * 50nC * 200kHz = 0.15 W per channel, 0.3 W total for two channels). The 8-SOIC has a thermal resistance of approximately 110 C/W on a standard 1 oz 4-layer PCB, so 0.3 W raises the junction by 33 C above ambient - acceptable for industrial -40C to +85C operation. For continuous operation at 125 C ambient, add copper pours on GND and the SOIC thermal pad. The high-side floating well can also heat significantly when running at 100% duty cycle for extended periods.
Compliance Information
RoHS compliant per manufacturer product page. Lead-free (PBF suffix). Not AEC-Q100 qualified - for automotive traction inverters use isolated drivers like 1ED020I12B2XUMA1.
