K3LK3L30CM-BGCU - 64Gb LPDDR5X DRAM 8533Mbps | Samsung
MPN: K3LK3L30CM-BGCU ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $36.5 | $36.50 |
| 10 | $34.8 | $348.00 |
| 100 | $32.9 | $3,290.00 |
| 500 | $31.2 | $15,600.00 |
| 1,000 | $29.6 | $29,600.00 |
Drop-in alternatives for K3LK3L30CM-BGCU — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K3KL3L30DM-BGCU
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K3KL3L30CM-BGCT
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View Datasheet →K3KL2L20DM-JGCT
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$20.8 / Unit
View Datasheet →K3LK3L30CM-BGCU Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR5X SDRAM (Low Power Double Data Rate 5X) |
| Density | 64 Gb (8 GB) |
| Data Rate | 8533 Mbps per pin |
| Package | 496-ball FBGA (BGC) |
| Mounting Type | Surface Mount (BGA) |
| Die Configuration | Stacked DRAM die (multi-die package) |
| Power Efficiency | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) |
| Speed vs Prior Generation | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) |
| Target Applications | AI devices, in-vehicle devices, mobile computing |
K3LK3L30CM-BGCU 496-ball fbga (bgc) Pin Configuration Guide
Complete pinout information for K3LK3L30CM-BGCU (496-ball fbga (bgc) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K3LK3L30CM-BGCU.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3LK3L30CM-BGCU is suitable for 6 applications: Edge AI Accelerators, In-Vehicle Infotainment and ADAS, Flagship Smartphone and Mobile Computing, 5G Networking and Edge Servers, Camera and Vision Processing Hubs, Tablets and Mini-PC Main Memory.
Edge AI Accelerators
The K3LK3L30CM-BGCU fits edge-AI accelerators because Samsung explicitly positions LPDDR5X for AI devices, combining 64 Gb (8 GB) capacity with 8533 Mbps bandwidth to feed on-device inference engines. AI workloads are memory-bandwidth bound: model weights and activation buffers stream continuously, so the 1.25x generational speed uplift directly raises tokens-per-second or frames-per-second throughput. Its stacked-die 496-ball FBGA keeps the memory footprint compact for space-limited camera and sensor hubs. Typically, the LPDDR5X connects to the SoC's dedicated memory controller over a wide CA/DQ bus with on-die termination; the trade-off versus HBM is far lower cost and power, at lower aggregate bandwidth, which suits single-SoC edge inference rather than datacenter training.
Recommended
In-Vehicle Infotainment and ADAS
The K3LK3L30CM-BGCU suits automotive in-vehicle devices, a target market Samsung names for LPDDR5X, because cockpit displays, navigation, and ADAS perception pipelines need both capacity (64 Gb / 8 GB for map, camera, and sensor buffers) and bandwidth (8533 Mbps) at low power to reduce thermal load in sealed enclosures. The approximately 25% power-efficiency gain versus the prior LPDDR generation reduces heat dissipation, easing cooling design in dashboards. In this application the DRAM attaches directly to an automotive SoC's LPDDR5X controller with full training and ECC support where the controller provides it; designers must confirm the specific qualification grade of this ordering code, since automotive programs may require a temperature-qualified suffix variant from the same Samsung family.
Recommended
Flagship Smartphone and Mobile Computing
The K3LK3L30CM-BGCU targets flagship smartphone platforms, the core market for LPDDR5X, where 8 GB of system memory in a single 496-ball stacked-die package maximizes density on crowded application-processor boards. The 8533 Mbps rate supports high-resolution camera bursts, 5G modems, and GPU workloads, while the approximately 25% efficiency gain extends battery life, the dominant user-facing metric in mobile design. The part mounts as the PoP-adjacent or package-on-board memory next to the mobile SoC, with the controller's PHY handling termination and training; power-management firmware uses LPDDR5X DVFS and self-refresh states to cut idle draw. Compared with uMCP solutions that combine DRAM and storage, a discrete LPDDR5X package offers higher memory bandwidth for performance-tier phones.
Recommended
5G Networking and Edge Servers
The K3LK3L30CM-BGCU serves 5G baseband cards, network appliances, and compact edge servers that need DRAM bandwidth beyond LPDDR4 but cannot afford the cost, power, or mechanical complexity of server-class DDR5 DIMM or HBM subsystems. Its 64 Gb density allows 16 GB to 32 GB of memory with two to four packages, and 8533 Mbps per pin delivers multi-GB/s aggregate bandwidth for packet processing and ML inference at the network edge. The stacked-die FBGA mounts directly on the baseboard around the SoC, so signal integrity at 8533 Mbps dictates layout: length-matched traces, tight SoC-to-DRAM placement, and reference-plane continuity. Thermal design should account for stacked-die power density with copper pours under the package and airflow modeling in fanless enclosures.
Recommended
Camera and Vision Processing Hubs
The K3LK3L30CM-BGCU fits multi-camera vision hubs in security, robotics, and industrial inspection, where 4K/8K sensor streams must be buffered in 8 GB-class LPDDR memory while the SoC runs detection models. The 8533 Mbps bandwidth sustains simultaneous multi-stream capture and AI pre-processing, and the low VDDQ-class LPDDR5X signaling keeps power within the thermal budget of sealed camera housings. Electrically, the DRAM connects to the SoC's LPDDR5X controller with CA/DQ buses routed on inner layers; the stacked 496-ball FBGA reduces routing escape complexity compared with multiple discrete DDR dies. Designers should budget refresh and self-refresh power states for always-on recording duty cycles, where background power over hours matters as much as peak bandwidth.
Recommended
Tablets and Mini-PC Main Memory
The K3LK3L30CM-BGCU provides main memory for tablets, thin clients, and ARM-based mini-PCs that use mobile SoCs, where a 496-ball LPDDR5X package delivers desktop-class 8 GB capacity and 8533 Mbps bandwidth within the power envelope of fanless designs. Samsung's LPDDR5X efficiency gain (about 25% versus the prior generation) directly translates into longer battery runtime and quieter, cooler chassis. The memory is placed close to the SoC with length-matched fly-by or point-to-point routing managed by controller PHY training. Compared with soldered DDR5 SO-DIMM solutions, discrete LPDDR5X saves board area and power at the cost of non-upgradeable memory, so capacity selection at design time is final - making the 64 Gb single-package density a key sizing advantage.
Recommended
Recommended Products Summary
Engineering reference data for K3LK3L30CM-BGCU — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KL3L30DM-BGCU | K3KL3L30CM-BGCT | K3KL2L20DM-JGCT |
|---|---|---|---|---|
| Package | 496-ball FBGA (BGC) | 496-ball FBGA (BGC) - same | 496-ball FBGA (BGC) - same | [DATA_NEEDED: package] |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Density | 64 Gb (8 GB) | 64 Gb (8 GB) | 64 Gb (8 GB) | 32 Gb class (4 GB) |
| Max Data Rate | 8533 Mbps | 8533 Mbps | 8533 Mbps | [DATA_NEEDED: data rate] |
| Die Configuration | Stacked DRAM die | Stacked DRAM die | Stacked DRAM die | Stacked DRAM die |
| Target Applications | AI, in-vehicle, mobile | AI, in-vehicle, mobile | AI, in-vehicle, mobile | Mobile, cost-sensitive platforms |
| Price Tier (qty 1) | $36.50 (as of 2026-09-04, estimate) | [DATA_NEEDED: price] | [DATA_NEEDED: price] | [DATA_NEEDED: price] |
Key Differentiators
- Generational bandwidth leadership (vs K3KL2L20DM-JGCT (LPDDR5X lower-density family member))
- Power efficiency for battery and sealed enclosures (vs Prior-generation Samsung LPDDR5-class parts)
- Single-package 8 GB density (vs K3KL2L20DM-JGCT (32 Gb class))
Design Notes
At 8533 Mbps, LPDDR5X signal integrity dominates the design. Keep the K3LK3L30CM-BGCU as close to the SoC as the mechanical envelope allows, route CA and DQ buses with length matching to the SoC datasheet tolerance, maintain controlled impedance with solid reference planes, and minimize via stubs under the 496-ball BGA escape pattern. Rely on the memory controller's write leveling, read training, and DQ calibration during bring-up rather than fixed delay settings. Prototype with a scope bandwidth sufficient for the signal harmonics of an 8533 Mbps eye before committing to production PCB stackup.
LPDDR5X uses multiple low-voltage supply rails (VDD and VDDQ-class rails in the sub-1 V region, exact values per the Samsung datasheet) with strict sequencing requirements; incorrect rail order can damage stacked-die packages. Power the rails from dedicated low-noise bucks with fast transient response, sized for the difference between idle self-refresh current and full-bandwidth read/write burst current. Samsung's stated ~25% power-efficiency improvement over the previous generation applies at the system level when DVFS and deep power-down states are correctly driven by firmware, so implement governor support early in software bring-up.
Estimated: stacked-die LPDDR5X packages concentrate power dissipation in a small footprint; at sustained high bandwidth the package can dissipate on the order of 1-2 W depending on utilization (derive actual figures from Samsung's IDD current tables at 8533 Mbps). Plan a continuous copper pour under and around the 496-ball FBGA, add thermal vias to inner/bottom layers, and verify junction temperature in the enclosure's worst-case ambient. In fanless edge-AI and in-vehicle enclosures, run thermal simulation early - memory throttling from thermal limits directly reduces effective bandwidth below the 8533 Mbps headline.
Compliance Information
Compliance status not stated in the retrieved distributor data; obtain RoHS/REACH/lead-free declarations from Samsung Semiconductor or the distributor. Automotive qualification must be confirmed per ordering-code temperature grade despite Samsung marketing LPDDR5X for in-vehicle devices.
