Micron Technology

MT53B256M32D1DS-062 - 8Gb LPDDR4 SDRAM 3200MT/s | Micron

MPN: MT53B256M32D1DS-062 βœ“ Active
In Stock Ships in 1-3 business days
1.1 V (typical, LPDDR4 class) Vdss 200-WFBGA (10 x 14.5 mm) Package 1.6 GHz Speed Mobile LPDDR4 SDRAM Memory
From $7.35 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $9.8 $9.80
10 $9.12 $91.20
100 $8.55 $855.00
500 $7.9 $3,950.00
1,000 $7.35 $7,350.00
ℹ️ All prices are in USD

Drop-in alternatives for MT53B256M32D1DS-062 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

MT53B256M32D1DS-062 XT:C

βœ… Drop-In
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
same die and package, extended-temperature/qualification grade variant; pin-to-pin identical

πŸ“‹ Reference alternative (not in catalog)

MT53B256M32D1DS-062 AIT:C

βœ… Drop-In
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
same die/package, industrial qualification grade vs AAT; TR (tape and reel) packing

πŸ“‹ Reference alternative (not in catalog)

MT53B256M32D1DS-062 AUT:C

βœ… Drop-In
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
same die/package, automotive-positioned qualification grade

πŸ“‹ Reference alternative (not in catalog)

MT53B256M32D1DS-062 AAT:C

βœ… Drop-In
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
same die/package, standard commercial grade with tray packing

πŸ“‹ Reference alternative (not in catalog)

MT53B256M32D1DT-062

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
DT die revision vs DS, same density/speed/package within MT53B256M32D1 datasheet family

πŸ“‹ Reference alternative (not in catalog)

MT53B256M32D1DS-062 Maximum Ratings & Electrical Characteristics

Memory Type Mobile LPDDR4 SDRAM
Memory Density 8 Gbit
Organization 256M x 32
Clock Frequency 1.6 GHz
Clock Cycle Time (tCK) 625 ps (-062 speed grade)
Data Rate 3200 MT/s per pin
Supply Voltage (VDD) 1.1 V (typical, LPDDR4 class)
Package 200-WFBGA (10 x 14.5 mm)
Mounting Type Surface Mount
Interface LPDDR4 (JEDEC mobile DRAM interface)
Burst Length BL16
Peak Bus Bandwidth 12.8 GB/s (32-bit bus at 3200 MT/s)
RoHS Status Compliant
Packaging Tray (AAT:C) or Tape & Reel (TR suffix variants)

MT53B256M32D1DS-062 200-wfbga (10 x 14.5 mm) Pin Configuration Guide

Complete pinout information for MT53B256M32D1DS-062 (200-wfbga (10 x 14.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

200-wfbga (10 x 14.5 mm) package pinout diagram for MT53B256M32D1DS-062

No detailed pinout data available for MT53B256M32D1DS-062.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT53B256M32D1DS-062 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT53B256M32D1DS-062 is suitable for 6 applications: Mobile and Tablet Main Memory, Edge-AI and Embedded Vision SoC Memory, Automotive Infotainment and ADAS, FPGA Processing and Prototyping Boards, Industrial Compute and Networking Appliances, Battery-Powered IoT and Portable Instruments.

πŸ“±

Mobile and Tablet Main Memory

The MT53B256M32D1DS-062 is architected for exactly this market: an 8Gbit LPDDR4 die on a 32-bit bus running at 3200 MT/s provides the approximately 12.8 GB/s peak bandwidth modern application processors expect, while the 1.1V-class supply keeps memory power within smartphone thermal budgets. In a handset, the device attaches point-to-point to the SoC's LPDDR4 controller with length-matched CA/DQ routing; BL16 bursts and on-die termination minimize reflection-induced eye closure at 1.6 GHz. Power-down and self-refresh states let the OS gate memory current during idle periods, directly extending battery life. The 200-WFBGA 10x14.5 mm outline fits standard mobile PCB keep-outs.

πŸŽ₯

Edge-AI and Embedded Vision SoC Memory

Edge-AI accelerators and vision SoCs stream frame buffers and activation tensors to DRAM continuously, so bandwidth, not just capacity, sets performance. The MT53B256M32D1DS-062's 3200 MT/s data rate on a 32-bit bus supplies roughly 12.8 GB/s of peak bandwidth for real-time multi-camera image pipelines, while its 8Gbit capacity holds 1080p/4K frame buffers plus neural-network intermediates. The 1.1V-class LPDDR4 interface keeps total power low enough for fanless embedded enclosures. Designers should budget PCB layers for length-matched fly-by routing and verify the SoC memory controller's LPDDR4 training support at the -062 speed grade before tape-out.

πŸš—

Automotive Infotainment and ADAS

Automotive cockpit SoCs and ADAS platforms need DRAM that survives wide ambient temperatures while sustaining graphics and sensor-fusion bandwidth. The MT53B256M32D1DS-062 AUT:C grade is Micron's automotive-positioned variant of this exact 8Gbit 256Mx32 die in the 200-WFBGA (10x14.5) package, allowing a single layout to be qualified across industrial and automotive programs. Its 3200 MT/s data rate supports multi-display infotainment rendering and radar/camera data buffering, and LPDDR4 self-refresh preserves system state during standby power modes. Confirm the exact AEC qualification class of the chosen suffix with Micron documentation during platform qualification.

πŸ–₯️

FPGA Processing and Prototyping Boards

High-end FPGAs and SoC-FPGAs with hard LPDDR4 memory controllers pair naturally with the MT53B256M32D1DS-062: the 256M x 32 organization matches single-channel LPDDR4 IP, and the 1.6 GHz clock (-062 grade) exercises the controller's full training capability. On an FPGA board, the 8Gbit device provides 1 GB of working memory for DSP pipelines, packet buffers, and RTL prototyping workloads. Because LPDDR4 requires per-device read/write training, designers should confirm the FPGA memory IP supports 3200 MT/s and validate PCB length matching; a successful bring-up then yields a reference for volume production layouts using the same footprint.

🏭

Industrial Compute and Networking Appliances

Industrial gateways, network appliances, and edge servers require main memory with both bandwidth and low steady-state power. The MT53B256M32D1DS-062's 12.8 GB/s peak bandwidth handles packet buffering and protocol processing at multi-gigabit line rates, while LPDDR4 power-down modes cut idle draw versus DDR3/DDR4 alternatives - valuable in passively cooled enclosures. The AIT:C industrial grade of this same die supports extended ambient environments typical of factory floors and outdoor cabinets. Layout teams should follow the fly-by clock/CA routing rules in the Micron datasheet and reserve copper for the 1.1V rail, which carries substantial transient current during BL16 bursts.

🧩

Battery-Powered IoT and Portable Instruments

Portable instruments and high-end IoT gateways gain from LPDDR4's bandwidth-per-watt advantage: the MT53B256M32D1DS-062 runs from a 1.1V-class supply and offers deep power-down and self-refresh modes that reduce memory standby current to the microamp-to-milliamp range between wake events. Its 1 GB capacity supports local data logging, protocol stacks, and on-device analytics without external storage traffic. Because the 200-WFBGA (10x14.5 mm) package requires controlled-impedance routing, it suits four-layer or higher PCBs typical of these products; designs should implement the datasheet power-up sequence and ZQ calibration resistor placement for reliable initialization across battery voltage sag.

What is the MT53B256M32D1DS-062?
The MT53B256M32D1DS-062 is a Micron 8Gbit Mobile LPDDR4 SDRAM organized as 256M x 32, running at a 1.6 GHz clock (625 ps tCK, LPDDR4-3200 class) in a 200-ball WFBGA (10 x 14.5 mm) package. It serves as main memory for mobile SoCs, edge-AI processors, and FPGAs, delivering roughly 12.8 GB/s of peak bandwidth over its 32-bit bus while operating from a nominal 1.1V supply for low power.
What is the price of MT53B256M32D1DS-062?
As of 2026-09-02, the MT53B256M32D1DS-062 family typically lists around $9.80 at quantity 1 from authorized distributors such as Mouser and DigiKey, with volume breaks to roughly $7.35 at 1,000 units. Actual price varies by suffix grade (AAT/AIT/AUT/XT) and market conditions; check the XAIPART quote form or distributor listing for a current, binding price and stock position.
Where to buy MT53B256M32D1DS-062 online?
The MT53B256M32D1DS-062 can be purchased from authorized distributors including Mouser (MT53B256M32D1DS-062 AAT:C), DigiKey (AIT:C, AUT:C, XT:C variants), and TrustedParts.com, as well as directly via XAIPART's quote system. Buying through authorized channels guarantees Micron factory-warranty coverage, traceability, and genuine-date-code product - important for LPDDR4, which is a common target of remarked and recycled parts.
Is MT53B256M32D1DS-062 in stock and what is the lead time?
Several family variants ship same-day from distributor stock: DigiKey lists the AIT:C, AUT:C, and XT:C versions as buy-now, ships-today items as of 2026-09-02. However, LPDDR4 density/speed combinations are subject to allocation cycles; for high volumes (10k+ units), factory lead times of 12-26 weeks are common. Confirm current stock and lead time on the distributor page or request a quote for scheduled deliveries.
What is the difference between MT53B256M32D1DS-062 AAT:C and AIT:C?
The AAT:C and AIT:C suffixes denote different Micron qualification grades of the same 8Gbit 256Mx32 LPDDR4 die in the same 200-WFBGA (10x14.5) package. In Micron mobile DRAM nomenclature, the letter code encodes temperature/qualification class and packing (TR = tape and reel). Both operate at the -062 (1.6 GHz) speed grade, so selection is driven by your temperature environment and quality-system requirements, not by electrical performance. Consult the Micron part-detail page for the exact temperature range of each suffix.
What is the best drop-in replacement for MT53B256M32D1DS-062?
The best drop-in replacements are other members of the same Micron MT53B256M32D1DS-062 family: the XT:C, AIT:C, AUT:C, and AAT:C grades, all of which use the identical die and 200-WFBGA (10x14.5) footprint and differ only in qualification grade and packing. Within Micron, the MT53B256M32D1DT-062 (DT die revision) is also footprint-compatible per the same datasheet family. Cross-brand LPDDR4 at this exact density/speed/package should only be qualified after controller training validation.
Can MT53B256M32D1DS-062 be used with an FPGA?
Yes. Modern FPGAs with hard LPDDR4 memory controllers (for example, high-end Zynq UltraScale+ or similar SoC-FPGA families) can interface directly to this 8Gbit, 256Mx32, 3200 MT/s LPDDR4. Successful operation depends on the memory controller supporting LPDDR4 training (read/write leveling, DQS gate training) and PCB routing meeting LPDDR4 length-matching rules. Verify the FPGA's LPDDR4 IP supports your target data rate before committing the layout.
What is the MT53B256M32D1DS-062 vs MT53B128M32D1DS-062 difference?
The two parts differ in density: the MT53B256M32D1DS-062 provides 8Gbit (256M x 32), while the MT53B128M32D1DS-062 provides 4Gbit (128M x 32) - half the capacity. Both share the LPDDR4 interface, 32-bit bus, -062 speed grade, and the same 200-ball WFBGA package family, so footprint compatibility is likely but must be verified against the respective datasheets; address-map differences mean BIOS or controller configuration changes may be required.
Where to download the MT53B256M32D1DS-062 datasheet PDF?
The official MT53B256M32D1 Mobile LPDDR4 SDRAM datasheet PDF is available from Micron's website through the part-catalog pages (micron.com/products/memory/lpddr-components/lpddr), which list product specs and downloadable datasheets for the MT53B256M32D1DS-062 family. Avoid third-party mirror sites where possible - the Micron page guarantees the latest revision. The same datasheet family covers the AAT, AIT, AUT, and XT suffix grades.
Where can I find the MT53B256M32D1DS-062 pinout?
The complete 200-ball pinout (ball map) for the MT53B256M32D1DS-062 is defined in the official Micron MT53B256M32D1 Mobile LPDDR4 SDRAM datasheet, in the package/ballout section for the 200-WFBGA (10x14.5 mm) package. Because LPDDR4 ball maps span 200 balls including CA, DQ, DQS, DM, ZQ, and power/ground nets, always design directly from the manufacturer datasheet rather than third-party summaries.
Is MT53B256M32D1DS-062 suitable for automotive applications?
The MT53B256M32D1DS-062 AUT:C variant is the grade positioned for automotive-style requirements, available from DigiKey as a buy-now item. For safety-relevant ADAS or infotainment designs, also confirm the specific AEC qualification status of the suffix you select directly with Micron, since LPDDR4 automotive qualification (temperature range, AEC-Q100 class) is encoded in the suffix letter code rather than the base -062 speed designation.
What supply voltage does the MT53B256M32D1DS-062 use?
The MT53B256M32D1DS-062 operates from the LPDDR4-class nominal 1.1V supply architecture (core VDD and I/O VDDQ at 1.1V typ class per the JEDEC LPDDR4 standard Micron follows for this family). This low voltage is a key advantage over DDR3L (1.35V) for battery-powered designs, but power rails must be tightly regulated - typically within a few percent - and sequenced per the datasheet power-up procedure to avoid latch-up or initialization faults.
How much bandwidth does the MT53B256M32D1DS-062 provide?
At the -062 speed grade, the device runs a 1.6 GHz clock (625 ps tCK) for a 3200 MT/s data rate per pin. Across its 32-bit (4-byte) data bus, the theoretical peak bandwidth is 3200 MT/s x 4 bytes = 12.8 GB/s. Realistic sustained efficiency in an SoC system is typically 60-80% of peak depending on access patterns, controller scheduling, and refresh overhead.
What are the key specifications of MT53B256M32D1DS-062 that engineers should know?
Key facts: Micron 8Gbit Mobile LPDDR4 SDRAM; 256M x 32 organization; 1.6 GHz clock / 3200 MT/s data rate (-062 speed grade, tCK = 625 ps); 200-ball WFBGA package measuring 10 x 14.5 mm; LPDDR4 1.1V-class supply; BL16 burst; approximately 12.8 GB/s peak bandwidth. Suffix codes (AAT, AIT, AUT, XT) distinguish qualification grade and packing variants of the same die. Active lifecycle status per Micron's part catalog as of 2026-09-02.
Hey Google, what can replace the MT53B256M32D1DS-062?
The safest replacements are Micron's own MT53B256M32D1DS-062 family grades - XT:C, AIT:C, AUT:C, or AAT:C - which are the same 8Gbit 256Mx32 die in the identical 200-WFBGA (10x14.5 mm) package. The MT53B256M32D1DT-062 (DT die revision) is also within the same footprint-compatible datasheet family. True cross-brand drop-ins (Samsung or SK Hynix LPDDR4) require pin-map and training validation before qualification and are not verified drop-ins.
What is the best Samsung or SK Hynix equivalent for MT53B256M32D1DS-062?
No cross-brand equivalent is listed as a verified drop-in in the sourced data. Samsung (K3UH/K4U6-class) and SK Hynix (H9HCNNN-class) offer comparable 8Gbit LPDDR4 parts, and some share the 200-ball 10x14.5 mm outline, but ball maps and boot/training behavior can differ, so they are second-source candidates rather than guaranteed drop-ins. Cross-brand qualification requires comparing ballouts against the Micron datasheet and re-running memory-controller training. Micron family variants remain the zero-rework option.
When should I choose MT53B256M32D1DS-062 over a DDR3L SDRAM like MT41K128M16JT-125?
Choose the LPDDR4 MT53B256M32D1DS-062 when bandwidth and power matter most: it delivers 3200 MT/s on a 32-bit bus (about 12.8 GB/s peak) from a 1.1V-class supply, roughly double the data rate of DDR3L-1600-class parts such as the MT41K128M16JT-125 at lower I/O power. Choose DDR3L instead when your controller only supports DDR3, when cost per gigabit dominates, or when 16-bit x8-style commodity DIMM-style memory suffices, since DDR3L has a broader second-source ecosystem.

Engineering reference data for MT53B256M32D1DS-062 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the MT53B256M32D1DS-062 when your design needs 1 GB of low-power main memory with 12.8 GB/s peak bandwidth on a 32-bit LPDDR4 channel - typical for mobile SoCs, edge-AI vision platforms, and FPGA processing boards. Select the XT:C grade for extended ambient environments, AIT:C for industrial deployments available from distributor stock, and AUT:C for automotive-positioned infotainment/ADAS programs (confirm the AEC qualification class with Micron). The AAT:C tray version suits standard commercial builds. If capacity, not bandwidth, is your constraint and cost must drop, the pin-compatible-family MT53B128M32D1DS-062 halves density at lower price. Prefer DDR3L parts like MT41K128M16JT-125 only when your controller lacks LPDDR4 support or a wider second-source ecosystem matters more than power and bandwidth. All family grades share the same footprint, so qualification investment is reusable.

Comparison with Alternatives

Parameter This Product MT53B256M32D1DS-062 XT:C MT53B256M32D1DS-062 AIT:C MT53B256M32D1DS-062 AUT:C MT53B256M32D1DT-062
Package 200-WFBGA (10 x 14.5 mm) 200-WFBGA (10 x 14.5 mm) - same 200-WFBGA (10 x 14.5 mm) - same 200-WFBGA (10 x 14.5 mm) - same 200-WFBGA (10 x 14.5 mm) - same family
Brand Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 256M x 32 256M x 32 256M x 32 256M x 32 256M x 32
Clock Frequency 1.6 GHz (-062 grade) 1.6 GHz 1.6 GHz 1.6 GHz 1.6 GHz
Qualification Grade Standard (base -062 designation) Extended grade Industrial grade Automotive-positioned grade DT die revision
Memory Type Mobile LPDDR4 SDRAM Mobile LPDDR4 SDRAM Mobile LPDDR4 SDRAM Mobile LPDDR4 SDRAM Mobile LPDDR4 SDRAM
Supply Voltage 1.1 V class (LPDDR4) 1.1 V class 1.1 V class 1.1 V class 1.1 V class
Availability [DATA_NEEDED] In stock at DigiKey (ships today) In stock at DigiKey (ships today) In stock at DigiKey (ships today) [DATA_NEEDED]

Key Differentiators

  • Extended-temperature option without redesign (vs MT53B256M32D1DS-062 AAT:C)
  • Automotive-positioned grade available (vs MT53B256M32D1DS-062 AUT:C)
  • 32-bit single-die bandwidth advantage (vs MT53B128M32D1DS-062)

Design Notes

LPDDR4 at 3200 MT/s (1.6 GHz clock) leaves little timing margin: route the CA bus in fly-by topology and keep DQ/DQS nets length-matched within the tolerances specified in the Micron MT53B256M32D1 datasheet (typically on the order of a few mils per group - use the datasheet values, not rules of thumb). Control single-ended impedance near 40-50 ohm class per the JEDEC LPDDR4 signaling environment and reference DQ/CA nets to a solid VDDQ plane. Simulate eye diagrams on the DQS strobes before fabrication; at 625 ps tCK, even 20 ps of skew consumes meaningful margin in read/write training.

Provide tightly regulated 1.1V-class VDD and VDDQ rails with decoupling placed directly at the WFBGA ballouts per the datasheet decoupling network. During BL16 bursts the device draws large transient currents at 1.6 GHz, so pair bulk capacitance with multiple 0.1 uF/0.01 uF ceramics at each power ball. Implement the datasheet power-up sequence and CKE timing exactly; LPDDR4 devices can fail initialization or train incorrectly if VDD ramps too slowly or VDDQ precedes VDD out of spec. Route the 1.1V rail with wide copper and multiple vias to limit IR drop.

Do not mix suffix grades blindly: AAT, AIT, AUT, and XT variants of the MT53B256M32D1DS-062 differ in temperature qualification and packing, so a BOM swap between grades must be checked against the product's ambient range. Also confirm the memory controller supports the exact die revision (DS vs DT) address map; LPDDR4 mode-register programming and training algorithms are controller-side and must be revalidated when second-sourcing. Finally, avoid third-party sourcing for this part - mobile DRAM is a frequent target of remarked units; buy through authorized distributors to guarantee date-code traceability.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance per distributor listings for the MT53B256M32D1DS-062 family. AEC-Q100 applicability depends on suffix grade (AUT:C is the automotive-positioned variant); verify exact qualification status with Micron documentation.

Data verified on: 2026-09-02 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Micron Technology MT53B256M32D1DS-062 MT53B256M32D1DS-062 AAT:C MT53B256M32D1DS-062 AIT:C MT53B256M32D1DS-062 AUT:C MT53B256M32D1DS-062 XT:C MT53B128M32D1DS-062 MT53B256M32D1DT-062 LPDDR4 Mobile LPDDR4 SDRAM DRAM JEDEC 200-WFBGA Fine-pitch ball grid array 8 Gbit 3200 MT/s RoHS AEC-Q100 edge AI ADAS mobile memory FPGA memory controller BL16 burst length self-refresh mode
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