AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
MPN： AS4C512M16D4A-62BCNTR ✓ 啟用中AS4C512M16D4A-62BCNTR 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption. DDR4 is the industry standard for modern computing, offering higher density and speed while maintaining backward compatibility with JEDEC standards.
Key features include a 1.2V power supply, 1600MHz clock rate (PC4-3200), 18ns CAS latency, and a 96-ball FBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is available in commercial temperature range (0°C to +95°C) and is RoHS compliant.
The AS4C512M16D4A-62BCNTR uses a 20nm-class process technology, offering high density and low power. It features a 16n prefetch architecture, which improves bandwidth efficiency. The device includes a temperature sensor for thermal management and supports DLL (Delay-Locked Loop) for precise timing.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems requiring high-capacity, high-speed memory. Its 512M x 16 organization is ideal for systems with a 16-bit data bus, such as high-end routers and switches.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.2V supply and a separate VPP (2.5V) for wordline boost, which must be generated correctly.
直接替換替代品，適用於 AS4C512M16D4A-62BCNTR — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： AS4C512M16D4A-62BCNTR （相同外形與佔位） — 差異在於 Data Rate, Package, Operating Temperature Range, Interface, Supply Voltage.
AS4C512M16D4A-62BCN
✅ 直接替換聯絡詢價
查看資料表 →AS4C512M16D4A-62BIN
✅ 直接替換聯絡詢價
查看資料表 →AS4C512M16D4B-62BCNTR
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16TB-062E
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$60 / 單位
查看資料表 →K4A8G165WC-BCWE
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$38 / 單位
查看資料表 →NT5AD512M16C4-JRI
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$75.58 / 單位
查看資料表 →AS4C512M16D4A-62BCNTR 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) |
| 供應電壓 | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | 1600 MHz (DDR4-3200) |
| CAS 延遲 | 18 ns |
| 封裝 | 96-FBGA (7.5x13 mm) |
| 工作溫度 | 0°C to +95°C (Commercial) |
| 介面 | POD (Pseudo Open Drain) |
| 資料速率 | 3200 MT/s |
| Refresh | Auto-refresh and self-refresh |
| RoHS | Compliant |
| Moisture Sensitivity Level | 3 (168 Hours) |
| Write Cycle Time - Word, Page | 15 ns |
| 安裝類型 | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) |
AS4C512M16D4A-62BCNTR 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDD — Power supply (1.2V) |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VDDQ — DQ power supply (1.2V) |
| 腳位 B2 | VSSQ — DQ ground |
| 腳位 B3 | DM0 — Data mask 0 |
| 腳位 B4 | DQS0_t — Data strobe 0 (true) |
| 腳位 B5 | DQS0_c — Data strobe 0 (complement) |
| 腳位 B6 | VSSQ — DQ ground |
| 腳位 B7 | VDDQ — DQ power supply (1.2V) |
| 腳位 B8 | DM1 — Data mask 1 |
| 腳位 B9 | DQS1_t — Data strobe 1 (true) |
| 腳位 B10 | DQS1_c — Data strobe 1 (complement) |
| 腳位 B11 | VSSQ — DQ ground |
| 腳位 B12 | VDDQ — DQ power supply (1.2V) |
| 腳位 C1 | A0 — Address input 0 |
| 腳位 C2 | A1 — Address input 1 |
| 腳位 C3 | A2 — Address input 2 |
| 腳位 C4 | A3 — Address input 3 |
| 腳位 C5 | A4 — Address input 4 |
| 腳位 C6 | A5 — Address input 5 |
| 腳位 C7 | A6 — Address input 6 |
| 腳位 C8 | A7 — Address input 7 |
| 腳位 C9 | A8 — Address input 8 |
| 腳位 C10 | A9 — Address input 9 |
| 腳位 C11 | A10/AP — Address input 10 / Auto-precharge |
| 腳位 C12 | A11 — Address input 11 |
| 腳位 D1 | A12 — Address input 12 |
| 腳位 D2 | A13 — Address input 13 |
| 腳位 D3 | A14 — Address input 14 |
| 腳位 D4 | A15 — Address input 15 |
| 腳位 D5 | BA0 — Bank address 0 |
| 腳位 D6 | BA1 — Bank address 1 |
| 腳位 D7 | BG0 — Bank group 0 |
| 腳位 D8 | BG1 — Bank group 1 |
| 腳位 D9 | CKE — Clock enable |
| 腳位 D10 | CS_n — Chip select (active low) |
| 腳位 D11 | ODT — On-die termination |
| 腳位 D12 | RAS_n — Row address strobe (active low) |
| 腳位 E1 | CAS_n — Column address strobe (active low) |
| 腳位 E2 | WE_n — Write enable (active low) |
| 腳位 E3 | ACT_n — Activate (active low) |
| 腳位 E4 | PAR — Parity input |
| 腳位 E5 | ALERT_n — Alert output (active low) |
| 腳位 E6 | RESET_n — Reset (active low) |
| 腳位 E7 | VDD — Power supply (1.2V) |
| 腳位 E8 | VSS — Ground |
| 腳位 E9 | VPP — Wordline boost supply (2.5V) |
| 腳位 E10 | VDD — Power supply (1.2V) |
| 腳位 E11 | VSS — Ground |
| 腳位 E12 | VDDQ — DQ power supply (1.2V) |
| 腳位 F1 | VSSQ — DQ ground |
| 腳位 F2 | DQ8 — Data input/output 8 |
| 腳位 F3 | DQ9 — Data input/output 9 |
| 腳位 F4 | VDDQ — DQ power supply (1.2V) |
| 腳位 F5 | DQ10 — Data input/output 10 |
| 腳位 F6 | DQ11 — Data input/output 11 |
| 腳位 F7 | VSSQ — DQ ground |
| 腳位 F8 | DQ12 — Data input/output 12 |
| 腳位 F9 | DQ13 — Data input/output 13 |
| 腳位 F10 | VDDQ — DQ power supply (1.2V) |
| 腳位 F11 | DQ14 — Data input/output 14 |
| 腳位 F12 | DQ15 — Data input/output 15 |
| 腳位 G1 | VSS — Ground |
| 腳位 G2 | VDD — Power supply (1.2V) |
| 腳位 G3 | VSS — Ground |
| 腳位 G4 | VDD — Power supply (1.2V) |
| 腳位 G5 | VSS — Ground |
| 腳位 G6 | VDD — Power supply (1.2V) |
| 腳位 G7 | VSS — Ground |
| 腳位 G8 | VDD — Power supply (1.2V) |
| 腳位 G9 | VSS — Ground |
| 腳位 G10 | VDD — Power supply (1.2V) |
| 腳位 G11 | VSS — Ground |
| 腳位 G12 | VDD — Power supply (1.2V) |
| 腳位 H1 | NC — No connect |
| 腳位 H2 | NC — No connect |
| 腳位 H3 | NC — No connect |
| 腳位 H4 | NC — No connect |
| 腳位 H5 | NC — No connect |
| 腳位 H6 | NC — No connect |
| 腳位 H7 | NC — No connect |
| 腳位 H8 | NC — No connect |
| 腳位 H9 | NC — No connect |
| 腳位 H10 | NC — No connect |
| 腳位 H11 | NC — No connect |
| 腳位 H12 | NC — No connect |
典型應用
AS4C512M16D4A-62BCNTR 適用於 6 應用s: Networking Equipment, Industrial Computing, Data Center Servers, Consumer Electronics, Automotive Infotainment, Telecommunications.
Networking Equipment
The AS4C512M16D4A-62BCNTR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 MT/s data rate support packet buffering, routing tables, and flow processing. The 1.2V operation reduces power consumption in always-on network infrastructure. With a 96-ball FBGA package, it fits compact line cards. The commercial temperature range is suitable for indoor networking equipment. Its JEDEC compliance ensures compatibility with standard DDR4 controllers used in network processors.
推薦
Industrial Computing
In industrial PCs and embedded systems, the AS4C512M16D4A-62BCNTR offers reliable, high-speed memory for data acquisition, control, and HMI applications. Its 8Gb density supports large application footprints and data logging. The 1.2V supply reduces heat generation, important in sealed enclosures. The 96-ball FBGA package is robust for vibration-prone environments. The commercial temperature range (0°C to +95°C) is adequate for most factory floors. JEDEC compliance ensures easy integration with standard industrial motherboards.
推薦
Data Center Servers
The AS4C512M16D4A-62BCNTR is ideal for server main memory, providing 8Gb capacity per chip to build large-capacity DIMMs. Its 3200 MT/s data rate meets the bandwidth demands of cloud computing and virtualization. The 1.2V operation contributes to energy efficiency in data centers. The 96-ball FBGA package is standard for DDR4 RDIMMs and UDIMMs. The commercial temperature range is suitable for controlled server environments. JEDEC compliance ensures compatibility with server memory controllers.
推薦
Consumer Electronics
In high-end consumer devices like gaming consoles, set-top boxes, and smart TVs, the AS4C512M16D4A-62BCNTR provides fast, low-power memory for smooth graphics and multitasking. Its 8Gb capacity supports large media buffers and app data. The 1.2V supply extends battery life in portable devices. The 96-ball FBGA package is compact for slim designs. The commercial temperature range covers typical consumer use. JEDEC compliance ensures compatibility with consumer SoCs.
推薦
Automotive Infotainment
Although the commercial temperature grade limits extreme automotive use, the AS4C512M16D4A-62BCNTR can be used in infotainment systems operating in controlled cabin environments. Its 8Gb capacity supports navigation maps, media playback, and instrument cluster graphics. The 1.2V operation reduces heat in the dashboard. The 96-ball FBGA package withstands vibration. For under-hood applications, consider the industrial grade AS4C512M16D4A-62BIN. JEDEC compliance ensures compatibility with automotive SoCs.
推薦
Telecommunications
In telecom base stations and switches, the AS4C512M16D4A-62BCNTR provides high-bandwidth memory for signal processing and protocol handling. Its 8Gb density supports large buffers for voice and data traffic. The 1.2V supply reduces power in remote radio units. The 96-ball FBGA package is suitable for compact line cards. The commercial temperature range is acceptable for indoor telecom equipment. JEDEC compliance ensures compatibility with telecom processors.
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推薦產品摘要
工程參考資料，適用於 AS4C512M16D4A-62BCNTR — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | AS4C512M16D4A-62BCN | AS4C512M16D4A-62BIN | AS4C512M16D4B-62BCNTR | MT40A512M16TB-062E | K4A8G165WC-BCWE | NT5AD512M16C4-JRI |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | Samsung Electronics | NXP Semiconductors |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) |
| Clock Rate | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz |
主要差異化特點
- Commercial temperature grade with 0°C to +95°C range (對比AS4C512M16D4A-62BIN)
- CAS latency of 18ns (對比AS4C512M16D4B-62BCNTR)
- Tape and reel packaging for automated assembly (對比AS4C512M16D4A-62BCN)
設計說明
The AS4C512M16D4A-62BCNTR requires a 1.2V VDD supply and a separate 2.5V VPP supply for wordline boost. Ensure these supplies are clean and well-regulated. Use 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. The VPP supply should be capable of sourcing transient current during write operations.
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Use ground planes beneath the FBGA package to minimize noise. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.
The AS4C512M16D4A-62BCNTR has a maximum operating temperature of +95°C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB copper. Monitor junction temperature to avoid exceeding the absolute maximum rating of +95°C.
合規資訊
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
