H5ANAG6NCR-UHC - 16Gb DDR4 SDRAM 1Gx16 FBGA-96 | SK Hynix
N.º da peça: H5ANAG6NCR-UHC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.6 | $116,00 |
| 100 | $10.45 | $1.045,00 |
| 500 | $9.8 | $4.900,00 |
| 1.000 | $9.2 | $9.200,00 |
H5ANAG6NCR-UHC Visão geral
DDR4 SDRAM (Double Data Rate fourth-generation synchronous DRAM) is the dominant volatile main-memory technology for servers, desktops, industrial controllers, and embedded computing modules. Within the memory hierarchy, a DDR4 SDRAM sits below the CPU cache and above storage, providing random access to working data at multi-gigabit-per-second transfer rates while requiring a memory controller to manage refresh, bank activation, and command timing.
Key characteristics of this family include a 16Gbit monolithic die density, a x16 data interface that simplifies 16-bit and 32-bit memory bus designs, and DDR4 features such as bank groups, burst length 8, and on-die termination. The UHC speed suffix denotes a commercial/industrial operating-range speed grade within the H5ANAG6N family, and the C die revision is a later-generation shrink of the A-die H5ANAG6NAMR, typically offering improved power characteristics.
Architecturally, the device organizes capacity into multiple banks and bank groups addressed by row and column strobes, using a 1.2V-class core supply typical of DDR4. Internal pipelining and DLL-based clocking sustain high-burst bandwidth, while DDR4 protocol features reduce command bus contention versus DDR3.
Typical applications include main memory for embedded x86 and ARM computing modules, industrial controllers requiring large working memory, network appliances, data logging systems, and replacement sourcing for aging DDR4 BOMs. The x16 organization suits cost-optimized boards where a full 64-bit bus is not required.
Designers should verify controller compatibility with the die revision C timing set, implement DDR4 fly-by routing with proper termination, and confirm the exact speed grade suffix against the ordering information table in the official datasheet.
This page synthesizes distributor availability data, same-family drop-in variants, and practical DDR4 design guidance not consolidated in the manufacturer datasheet, with all unverified parameters explicitly flagged for engineering review.
Alternativas drop-in para H5ANAG6NCR-UHC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5ANAG6NCR-UHC (mesmo formato e footprint) — diferindo em Package, Interface, Organization, Density, Mounting Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5ANAG6NAMR-UHC
✅ Drop-In✓ Em estoque
$4.5 / unidade
Ver ficha técnica →H5ANAG6NCR-RDC
✅ Drop-In✓ Em estoque
$72.1 / unidade
Ver ficha técnica →H5ANAG6NCR-PBC
✅ Drop-In✓ Em estoque
$70.2 / unidade
Ver ficha técnica →H5ANAG6NCJR-XNC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$84.97 / unidade
Ver ficha técnica →H5ANAG6NBJR-UHC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$8.09 / unidade
Ver ficha técnica →H5ANAG8NCR-UHC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$3.05 / unidade
Ver ficha técnica →H5ANAG6NCR-UHC Especificações
| Tipo de memória | DDR4 SDRAM |
| Memory Density | 16 Gb (2 GB) |
| Organização da memória | 1G x 16 |
| Interface | CMOS, Double Data Rate IV |
| Encapsulamento | FBGA-96 (PBGA-96) |
| Die Revision | C |
| Configuration | 1 Channel, 1 Rank |
| Tipo de montagem | Surface Mount |
| Application | Main memory, embedded computing, industrial controllers |
Guia de Configuração de Pinos do H5ANAG6NCR-UHC fbga-96 (pbga-96)
Configuração de pinos para H5ANAG6NCR-UHC (pacote fbga-96 (pbga-96)). A numeração dos pinos, funções e diagramas de conexão estão definidos no datasheet do fabricante. Consulte-o para o footprint exato e diretrizes de soldagem.
Nenhum dado detalhado de pinagem disponível para H5ANAG6NCR-UHC.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
H5ANAG6NCR-UHC é adequado para 6 aplicaçãos: Embedded Computing Modules, Industrial Controllers, Network Appliances, Data Logging and Embedded Storage Caching, Test and Measurement Instruments, Replacement Sourcing and BOM Continuity.
Embedded Computing Modules
Embedded x86 and ARM computing modules (COM Express, SMARC, custom SoMs) need dense main memory in minimal board area. The H5ANAG6NCR-UHC provides 2GB per package at 1Gx16 organization in a 0.8 x 1.0-inch-class 96-ball FBGA, so a module can reach 4GB with just two components on a 32-bit bus. The x16 strobe configuration (UDQS/LDQS) simplifies length-matched routing versus eight x8 parts. Because DDR4 uses a fly-by clock topology with on-die termination, the memory controller's ZQ calibration and write-leveling must be run at bring-up; expect to reserve VTT termination rail budget of roughly half the VDDQ current for a 1.2V-class DDR4 interface.
Recomendado
Industrial Controllers
Industrial PLCs and motion controllers increasingly run Linux-class firmware that demands gigabytes of working memory for protocol stacks, logging buffers, and HMI rendering. The H5ANAG6NCR-UHC supplies 16Gb density in one FBGA-96 component, reducing BOM line count versus stacking 4Gb parts, and its x16 bus suits the 16/32-bit controllers common in industrial designs. Layout should follow the SK hynix DDR4 design guide: fly-by address/command routing, 40-ohm-class series termination at the controller, and solid VDDQ plane segmentation. Industrial enclosures with limited airflow require derating analysis of the component's operating-temperature specification before qualification.
Recomendado
Network Appliances
Packet-processing appliances, security gateways, and router line cards use DDR4 for flow tables, packet buffers, and deep-packet-inspection state. The H5ANAG6NCR-UHC's 1Gx16 organization allows granular memory sizing on 32-bit sub-channels, and 16Gb per package maximizes state capacity per PCB area, directly increasing supported concurrent sessions. Designers should pair the DRAM with a dedicated memory controller or network processor supporting DDR4 burst length 8 and bank-group interleaving, since bank-group scheduling measurably raises effective bandwidth for random-access-heavy packet workloads. Confirm refresh (tRFC) overhead in latency budgets when sizing buffer depth.
Recomendado
Data Logging and Embedded Storage Caching
Embedded loggers, gateways, and test instruments use DDR4 as a write cache between high-speed acquisition front ends and slower NAND storage. The H5ANAG6NCR-UHC offers 2GB of buffering in one component; at a 100 MB/s sustained ingest rate this buffer represents roughly 20 seconds of data, enough to absorb NAND erase-cycle stalls without loss. The x16 organization reduces strobe count and simplifies the layout on two-layer-stack instrumentation boards. Designers must implement controller-side wear-aware flushing and power-fail handling, since DDR4 is volatile - pair the DRAM with a supervisor that triggers a safe flush or a backup-energy dump on brownout detection.
Recomendado
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep acquisition memory to capture long time records at high sample rates. The H5ANAG6NCR-UHC, at 16Gb per component, lets an instrument implement multi-gigabyte capture buffers using four packages on a 64-bit bus. DDR4's burst architecture favors the sequential-write pattern of acquisition streaming, and bank-group interleaving sustains near-peak bandwidth for continuous recording. Thermal design matters in benchtop instruments: DDR4 components at sustained streaming loads dissipate measurable power, so placement near fans and copper pour under the FBGA-96 thermal balls improves junction-to-ambient conditions during long captures.
Recomendado
Replacement Sourcing and BOM Continuity
Many legacy DDR4-based platforms face obsolescence of older die revisions, forcing replacement sourcing. The H5ANAG6NCR-UHC (C die) is a natural substitute for designs qualified around earlier family members such as the H5ANAG6NAMR (A die) or H5ANAG6NBJR, because all share the same 96-ball FBGA footprint, 1Gx16 organization, and DDR4 protocol interface - no PCB rework is required. The recommended procedure is: confirm the controller timing table against die-revision C data, run a full memory stress test (e.g., extended margin scanning), and update the AVL. This keeps production lines running while capturing the shrink-die benefits of reduced operating current.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5ANAG6NCR-UHC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5ANAG6NAMR-UHC | H5ANAG6NCR-RDC | H5ANAG6NCR-PBC | H5ANAG6NCJR-XNC | H5ANAG6NBJR-UHC | H5ANAG8NCR-UHC |
|---|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 16 Gb (2 GB) | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 2G x 8 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DDR4-2400 class family) | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Die Revision | C | A | C | C | J | B | C |
| Speed Grade Suffix | UHC | UHC - same | RDC - different bin | PBC - different bin | XNC - different bin | UHC - same | UHC - same |
Principais diferenciais
- Newest C die revision in the 16Gb family (vs H5ANAG6NAMR-UHC)
- Identical UHC speed grade as legacy sibling (vs H5ANAG6NBJR-UHC)
- x16 organization reduces bus complexity (vs H5ANAG8NCR-UHC)
Notas de projeto
DDR4 requires fly-by routing of address/command/clock with on-die termination and controller-side write leveling. For the x16 H5ANAG6NCR-UHC, keep UDQS/UDQS# and LDQS/LDQS# diff pairs length-matched within +/-5 mils internally and match DQ to its strobe within the controller's specified skew window (typically a few hundred picoseconds). Route at 40-50 ohm single-ended impedance, reference DQ routing to a continuous VDDQ plane, and avoid crossing plane splits under the FBGA-96 fanout. Follow the SK hynix DDR4 design guide for series-termination placement at the controller end.
DDR4 uses separate VDD (core) and VDDQ (interface) rails, nominally 1.2V-class per JEDEC DDR4 convention - confirm exact ranges in the die-revision C datasheet. Estimated: a 16Gb x16 DDR4 operating at DDR4-2400-class rates draws peak currents in the hundreds of milliamps per component; size the VTT termination regulator for roughly half of total VDDQ current and place bulk (100 uF class) plus high-frequency (0.1 uF) decoupling at each rail pin group. VPP, if specified for the family, is a separate 2.5V-class rail - never share it with VDD.
Do not assume datasheet interchange between die revisions. The A-die H5ANAG6NAMR datasheet is the most widely mirrored document, but the C-die H5ANAG6NCR may have updated timing (tRFC, tFAW) and IDD tables; controllers programmed with stale timing sets can show marginal reliability at temperature extremes. Always pull the die-revision-C document from SK hynix before programming controller registers, and re-run write-leveling and read-eye training after any die-revision or speed-suffix change in production.
Informações de conformidade
Verified web data contains no explicit RoHS/REACH certificate for this exact suffix. Modern SK hynix DDR4 is typically produced as green (lead-free/halogen-free) packaging, but official certificates must be obtained from SK hynix or the distributor. Not an automotive-qualified ordering code.
