IQD016N08NM5ATMA1 - 80V 1.6mΩ OptiMOS 5 N-MOSFET | Infineon
N.º da peça: IQD016N08NM5ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.51 | $25,10 |
| 100 | $2.18 | $218,00 |
| 500 | $1.92 | $960,00 |
| 1.000 | $1.68 | $1.680,00 |
IQD016N08NM5ATMA1 Visão geral
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which the drain-source channel is opened and closed by applying a positive gate-source voltage relative to the source. In the broader taxonomy, the IQD016N08NM5ATMA1 belongs to the discrete MOSFET family within power semiconductors, and within that family to the OptiMOS 5 low-voltage (≤100V) high-performance segment targeting synchronous rectification, hot-swap, and OR-ing functions. Its 80V drain-source rating places it in the mainstream 60-80V bracket used widely in 48V telecom rails, 36V-48V e-mobility auxiliary buses, USB-PD and multi-cell battery applications where headroom above 48V nominal is required for inductive transients.
Key features include 1.6 mΩ typical RDS(on) at VGS=10V, an 80V VDS rating, and the thermally enhanced PG-TSON-8-9 package with an exposed top-side cooling pad. The OptiMOS 5 process technology achieves a figure-of-merit (FOM = RDS(on) × Qg) optimized for high-frequency switching, while the PQFN 5x6 footprint enables direct PCB mounting with low parasitic inductance. The device also integrates a monolithic body diode suitable for synchronous rectification, and is rated for operation across the standard industrial temperature range.
The IQD016N08NM5ATMA1 is engineered primarily for high-current synchronous rectification stages in switched-mode power supplies (SMPS), where its 1.6 mΩ RDS(on) directly minimizes conduction loss and improves overall converter efficiency. Compared with older OptiMOS 3 or 4 generations, the OptiMOS 5 cell density delivers measurably lower on-resistance per unit silicon area, which translates into smaller footprints or lower losses at equivalent current. The PG-TSON-8-9 package further reduces parasitic source inductance versus DPAK/TO-220 alternatives, supporting cleaner gate-drive waveforms at multi-hundred-kHz switching frequencies.
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, battery management system (BMS) protection and hot-swap FETs in 48V e-mobility systems, high-current OR-ing and load switches on multi-rail power distribution boards, and motor-drive low-side switches in industrial automation. The wide VDS margin also makes it suitable for 36V-72V industrial bus systems. When designing with this device, attention to gate-drive loop inductance and PCB layout of the source-sense (Kelvin) connection is critical—the PG-TSON-8-9 package includes a dedicated source-sense pin to enable clean gate drive and avoid parasitic turn-on in bridge topologies.
This page synthesizes distributor stock and pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet.
Alternativas drop-in para IQD016N08NM5ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IQD016N08NM5ATMA1 (mesmo formato e footprint) — diferindo em Technology, Package, Operating Temperature Range, Power Dissipation (Tc), Drain-Source Voltage (VDS).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IQDH35N03LM5SCATMA1
✅ Drop-In✓ Em estoque
$2.05 / unidade
Ver ficha técnica →IQE050N08NM5CGATMA1
✅ Drop-In✓ Em estoque
$1.75 / unidade
Ver ficha técnica →IQE036N08NM6CGATMA1
✅ Drop-In✓ Em estoque
$0.82 / unidade
Ver ficha técnica →ISC011N04NM7VATMA1
✅ Drop-In✓ Em estoque
$0.41 / unidade
Ver ficha técnica →BSC076N04NDATMA1
✅ Drop-In✓ Em estoque
$0.82 / unidade
Ver ficha técnica →IQDH29NE2LM5CGSCATMA1
✅ Drop-In✓ Em estoque
$1.84 / unidade
Ver ficha técnica →IQD016N08NM5ATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (Ta) | 31 A |
| Continuous Drain Current (Tc) | 323 A |
| On-Resistance RDS(on) typical | 1.6 mΩ |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| Encapsulamento | PG-TSON-8-9 (PQFN 5x6) |
| Tipo de montagem | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET |
| Faixa de temperatura de operação | -55C to +150C (junction, standard MOSFET rating) |
| Status RoHS | Compliant |
Configuração de pinos do IQD016N08NM5ATMA1
| Pino 1 | Source (Sense) — Kelvin source-sense connection for clean gate drive |
| Pino 2 | Gate — Gate drive input |
| Pino 3 | Drain — Drain terminal (connected to thermal pad region) |
| Pino 4 | Drain — Drain terminal |
| Pino 5 | Drain — Drain terminal |
| Pino 6 | Drain — Drain terminal |
| Pino 7 | Drain — Drain terminal |
| Pino 8 | Source — Main source terminal |
Área de Operação Segura (estimated based on datasheet continuous ratings)
Aplicações típicas
IQD016N08NM5ATMA1 é adequado para 6 aplicaçãos: 48V Telecom Synchronous Rectification, Battery Management System Hot-Swap / Protection, High-Current OR-ing and Load Switch, Industrial 72V Bus Motor Drive Low-Side Switch, USB-PD and High-Power Charging Power Stage, Solar Optimizer and DC-DC Microinverter Switch.
48V Telecom Synchronous Rectification
The IQD016N08NM5ATMA1 is well matched to the synchronous rectifier (SR) MOSFET position in 48V telecom isolated DC-DC converters. Its 80V VDS provides adequate margin above 48V nominal for transformer leakage-inductance overshoot and ringing, while the 1.6 mΩ typical RDS(on) directly minimizes conduction loss on the secondary side. Placed across the rectifier transformer secondary with a standard SR controller, the part's low Qg of the OptiMOS 5 family enables clean transitions at 100-300 kHz switching frequencies. Compared with using two paralleled 80V MOSFETs, a single IQD016N08NM5ATMA1 halves driver count and PCB area, while delivering comparable or better thermal performance through the top-cooled PQFN 5x6 package.
Recomendado
Battery Management System Hot-Swap / Protection
In 36V-48V battery management systems (BMS) and e-mobility auxiliary buses, the IQD016N08NM5ATMA1 serves as the hot-swap or in-line protection FET. Its 1.6 mΩ RDS(on) at full VGS keeps steady-state I²R losses low when carrying 20-30A continuous battery currents, and the 80V VDS withstands the inductive transients produced by contactor dropout or wiring inductance. Used as a low-side disconnect switch with a dedicated hot-swap controller, the part's PG-TSON-8-9 footprint enables a compact BMS PCB layout. Engineers should still add a TVS clamp across drain-source for the harshest automotive load-dump scenarios where transients can exceed 80V.
Recomendado
High-Current OR-ing and Load Switch
For redundant 48V power distribution in server and telecom shelves, the IQD016N08NM5ATMA1 functions as the OR-ing MOSFET between paralleled rectifier outputs. Its 80V rating tolerates the voltage transient when a failed rectifier drops out, while the 1.6 mΩ RDS(on) minimizes the steady-state voltage drop between source and load—critical for meeting tight output-voltage regulation tolerances. The PG-TSON-8-9 package's top-side thermal pad enables direct attachment of a small heatsink, supporting sustained 20-30A operation without airflow. Designers typically drive the gate with a dedicated OR-ing controller that reverse-biases VGS quickly on reverse-current detection.
Recomendado
Industrial 72V Bus Motor Drive Low-Side Switch
In 72V industrial motor-drive and robotics applications, the IQD016N08NM5ATMA1 can serve as the low-side switch in three-phase inverter stages where continuous currents stay below ~25A per phase. The 80V VDS margin covers PWM ringing and back-EMF overshoot from motor inductance, while the 1.6 mΩ RDS(on) reduces conduction loss versus discrete alternatives in DPAK or D2PAK packages. Mounted on a PG-TSON-8-9 footprint with adequate copper pour, it can sustain continuous operation up to the package's thermal limit. For higher-current phases, paralleling two IQD016N08NM5ATMA1 devices or selecting a higher-current part is recommended.
Recomendado
USB-PD and High-Power Charging Power Stage
In USB-Power-Delivery (USB-PD) Extended Power Range (EPR) adapters above 100W, the IQD016N08NM5ATMA1 can be used as the synchronous rectifier on the secondary side of the flyback or active-clamp flyback topology. The 80V rating covers 28V-36V EPR output rails plus transient overshoot, and the 1.6 mΩ RDS(on) maximizes adapter efficiency at the 5A-7A continuous currents typical of 140W-180W USB-PD designs. The PQFN 5x6 footprint is small enough for ultra-compact wall-plug form factors while still dissipating 3-5W in free air. Pairing with a USB-PD controller and secondary-side synchronous rectifier driver IC delivers a competitive BOM cost.
Recomendado
Solar Optimizer and DC-DC Microinverter Switch
In residential solar power optimizers and microinverter DC-DC stages, the IQD016N08NM5ATMA1 acts as the high-frequency switching element for 40V-60V panel-input boost converters. Its 80V VDS provides headroom for double-arcing transients common in PV installations, while the 1.6 mΩ RDS(on) keeps conversion efficiency above 98% even at sustained 15-20A panel current. The OptiMOS 5 process enables 200 kHz switching for compact magnetics, and the top-cooled PQFN 5x6 package simplifies thermal management in sealed IP67 outdoor enclosures. Designers should still validate long-term thermal performance under solar-soak conditions.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IQD016N08NM5ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IQDH35N03LM5SCATMA1 | IQE050N08NM5CGATMA1 | IQE036N08NM6CGATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same |
| VDS (Drain-Source Voltage) | 80 V | 40 V | 80 V | 80 V | 40 V | 40 V | 25 V |
| RDS(on) typical | 1.6 mΩ | 3.5 mΩ | 5.0 mΩ | 3.6 mΩ | 1.1 mΩ | 7.6 mΩ | 2.9 mΩ |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 7 | OptiMOS 3 | OptiMOS 5 |
| Primary Use Case | 48V SMPS / BMS / OR-ing | Battery management 40V | Lower-current 80V SMPS | Newer-gen 80V SMPS | 40V battery applications | 40V battery/load switch | 25V battery protection |
Principais diferenciais
- Ultra-low 1.6 mΩ RDS(on) at 80V VDS in compact PQFN 5x6 (vs BSC076N04NDATMA1)
- OptiMOS 5 generation optimized for 48V SMPS (vs IQDH35N03LM5SCATMA1)
- Newer OptiMOS 6 alternative exists in same footprint (vs IQE036N08NM6CGATMA1)
Notas de projeto
At full-load continuous current, the IQD016N08NM5ATMA1 dissipates I²R power that must be sunk through the top-exposed pad of the PG-TSON-8-9 package. Estimated: at 30A continuous with RDS(on)=1.6 mΩ at 100C junction, conduction loss is approximately 1.44W. With typical θJA of ~50 C/W on a 1-square-inch 2-oz copper pour, junction rises roughly 72C above ambient. For continuous operation above 20A, design with copper pours on both top and bottom layers connected by 0.3mm thermal vias under the exposed pad, and consider a small clip-on heatsink for sustained loads above 25A in enclosed enclosures.
The PG-TSON-8-9 footprint requires careful PCB layout because of its combined power and Kelvin-source pins. Place input gate-drive resistors within 5mm of the Gate and Source-sense pins to minimize the gate-drive loop inductance, which otherwise causes ringing and possible shoot-through in bridge topologies. Use a 4-layer PCB with a dedicated ground plane directly under the device to provide a low-impedance thermal and electrical return; this also reduces EMI by containing high-frequency switching currents. The exposed top pad should receive solder paste via the standard stencil aperture recommended in the Infineon land-pattern application note.
Do not connect the gate drive to the main Source pin when high di/dt is expected—always use the dedicated Source-sense pin to avoid parasitic turn-on from source-inductance voltage transients. Estimated: at 1A/ns switching speed and 1 nH of source inductance, the developed V_source spike is 1V, which can falsely turn on a low-Vth device. Also, ensure VGS never exceeds the maximum +/-20V rating—use a gate-drive Zener clamp or RC snubber if driving from a 12V or higher supply with ringing. Finally, verify that the application's maximum load-dump or inductive-transient voltage stays below the 80V VDS rating with derating margin.
Informações de conformidade
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive AEC-Q100 applications, refer to Infineon's automotive-grade OptiMOS 5 portfolio.
