K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
N.º da peça: K4A8G085WB-BIRC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $11.25 | $11,25 |
| 10 | $8.125 | $81,25 |
| 100 | $7.1875 | $718,75 |
| 500 | $6.875 | $3.437,50 |
| 1.000 | $6.5625 | $6.562,50 |
K4A8G085WB-BIRC Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It operates at lower voltages (1.2V) compared to DDR3 (1.5V), reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for modern computing, servers, and embedded systems, offering improved signal integrity and higher density modules.
Key features include a density of 8Gb, organization of 1G x 8, and a data rate of 2400 Mbps (PC4-19200). The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 78-ball FBGA package ensures compact footprint and excellent thermal performance. The B-die variant is renowned for its tight timings and overclocking headroom, making it a favorite among enthusiasts and system integrators.
Technically, the K4A8G085WB-BIRC utilizes Samsung's advanced DRAM process technology, offering low power consumption and high reliability. It features on-die termination (ODT), programmable read/write latency, and auto-refresh modes. The device supports various burst lengths (BL8, BL16) and includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across temperature variations.
Typical applications include high-performance computing, servers, networking equipment, and industrial embedded systems. Its 1G x 8 organization is ideal for building memory modules (e.g., UDIMM, SODIMM) and for direct placement on motherboards. The wide temperature range and low voltage make it suitable for automotive and industrial environments where reliability is critical.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The 78-ball FBGA package requires careful PCB design to route the high-speed signals effectively.
Alternativas drop-in para K4A8G085WB-BIRC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4A8G085WB-BIRC (mesmo formato e footprint) — diferindo em Density, Package, Supply Voltage, Memory Type, Data Rate.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4A8G085WB-BCRC
✓ Em estoque
$6.8 / unidade
Ver ficha técnica →K4A8G085WB-BITD
✓ Em estoque
$3.8 / unidade
Ver ficha técnica →K4A8G085WC-BIWE
✓ Em estoque
$6.29 / unidade
Ver ficha técnica →K4A8G085WB-BICH
✓ Em estoque
$4.96 / unidade
Ver ficha técnica →MT40A1G8SA-062E
✓ Em estoque
$6.05 / unidade
Ver ficha técnica →H5AN8G6NDJR
✓ Em estoque
$35 / unidade
Ver ficha técnica →K4A8G085WB-BIRC Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Density | 8 Gb |
| Organização da memória | 1G x 8 |
| Taxa de dados | 2400 Mbps |
| Tensão de alimentação | 1.2 V |
| Temperatura de operação | -40°C to 95°C |
| Encapsulamento | 78-FBGA |
| Number of Terminals | 78 |
| Refresh Cycles | 8192 |
| Die Family | B-die |
| Burst Length | 8, 16 |
| Interface | SSTL-12 |
| RoHS | Compliant |
| Tipo de montagem | Surface Mount |
Configuração de pinos do K4A8G085WB-BIRC
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ4 — Data input/output 4 |
| Pino B3 | DQ5 — Data input/output 5 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ6 — Data input/output 6 |
| Pino B6 | DQ7 — Data input/output 7 |
| Pino B7 | VSS — Ground |
Aplicações típicas
K4A8G085WB-BIRC é adequado para 6 aplicaçãos: High-Performance Computing, Networking Equipment, Industrial Embedded Systems, Automotive Infotainment, Data Center Servers, Consumer Electronics.
High-Performance Computing
The K4A8G085WB-BIRC delivers 2400 Mbps data rate and 8Gb density, making it ideal for HPC systems requiring high bandwidth and low latency. Its B-die design offers excellent overclocking potential, enabling memory-intensive workloads like scientific simulations and data analytics to run faster. The 1.2V operation reduces power consumption, crucial for large-scale clusters.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the K4A8G085WB-BIRC provides fast, reliable memory for packet buffering and routing tables. Its 2400 Mbps speed ensures high throughput, while the wide temperature range (-40°C to 95°C) suits outdoor and industrial networking gear. The 78-FBGA package allows compact board designs.
Recomendado
Industrial Embedded Systems
The K4A8G085WB-BIRC operates reliably from -40°C to 95°C, making it suitable for industrial automation, robotics, and control systems. Its 1.2V low-power operation reduces heat generation, and the 8Gb density supports complex applications. The B-die's stability ensures consistent performance in harsh environments.
Recomendado
Automotive Infotainment
With its wide temperature range and high reliability, the K4A8G085WB-BIRC is well-suited for automotive infotainment systems, including navigation, multimedia, and driver assistance. The 2400 Mbps speed supports high-resolution displays and real-time data processing. The 1.2V operation aligns with automotive power budgets.
Recomendado
Data Center Servers
The K4A8G085WB-BIRC is ideal for data center servers requiring high-density, high-bandwidth memory. Its 8Gb density and 2400 Mbps speed enable fast data processing for cloud computing, virtualization, and big data analytics. The low 1.2V voltage reduces power and cooling costs, critical for large server farms.
Recomendado
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the K4A8G085WB-BIRC's B-die design offers superior overclocking potential, making it a favorite among enthusiasts. Its 2400 Mbps speed and 8Gb density provide ample memory for gaming, content creation, and multitasking. The 78-FBGA package is compatible with standard DIMM designs.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4A8G085WB-BIRC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4A8G085WB-BCRC | K4A8G085WB-BITD | K4A8G085WC-BIWE | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | 2400 Mbps | 2400 Mbps | 3200 Mbps | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Principais diferenciais
- B-die design offers superior overclocking potential (vs K4A8G085WB-BCRC)
- Wide temperature range (-40°C to 95°C) (vs MT40A1G8SA-062E)
- Same-brand availability and compatibility (vs H5AN8G6NDJR)
Notas de projeto
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 50 ohms for address/control lines. Use proper termination (ODT) and keep trace lengths matched within 100 mils. Place decoupling capacitors (0.1uF and 1uF) close to each VDD pin to minimize power supply noise.
The K4A8G085WB-BIRC operates up to 95°C, but for reliable long-term performance, keep the junction temperature below 85°C. Ensure adequate airflow or heatsinking in high-density designs. The 78-FBGA package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package.
DDR4 signals are sensitive to crosstalk and reflections. Use series termination resistors (22-33 ohms) near the driver for address/control lines. For data lines, rely on the DRAM's on-die termination (ODT) settings. Keep the routing on inner layers with solid reference planes to reduce EMI.
Informações de conformidade
RoHS compliance is indicated by LCSC listing. Other compliance data not explicitly stated in the provided data.
