K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
料号： K4A8G085WB-BIRC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $11.25 | $11.25 |
| 10 | $8.125 | $81.25 |
| 100 | $7.1875 | $718.75 |
| 500 | $6.875 | $3,437.50 |
| 1,000 | $6.5625 | $6,562.50 |
K4A8G085WB-BIRC 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It operates at lower voltages (1.2V) compared to DDR3 (1.5V), reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for modern computing, servers, and embedded systems, offering improved signal integrity and higher density modules.
Key features include a density of 8Gb, organization of 1G x 8, and a data rate of 2400 Mbps (PC4-19200). The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 78-ball FBGA package ensures compact footprint and excellent thermal performance. The B-die variant is renowned for its tight timings and overclocking headroom, making it a favorite among enthusiasts and system integrators.
Technically, the K4A8G085WB-BIRC utilizes Samsung's advanced DRAM process technology, offering low power consumption and high reliability. It features on-die termination (ODT), programmable read/write latency, and auto-refresh modes. The device supports various burst lengths (BL8, BL16) and includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across temperature variations.
Typical applications include high-performance computing, servers, networking equipment, and industrial embedded systems. Its 1G x 8 organization is ideal for building memory modules (e.g., UDIMM, SODIMM) and for direct placement on motherboards. The wide temperature range and low voltage make it suitable for automotive and industrial environments where reliability is critical.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The 78-ball FBGA package requires careful PCB design to route the high-speed signals effectively.
直接替换替代料： K4A8G085WB-BIRC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4A8G085WB-BIRC （相同外形与封装尺寸） ——差异在于 Density, Package, Supply Voltage, Memory Type, Data Rate.
快速对比工具——选择替代料号进行并排对比：
K4A8G085WB-BCRC
✓ 有现货
$6.8 / 个
查看数据手册 →K4A8G085WB-BITD
✓ 有现货
$3.8 / 个
查看数据手册 →K4A8G085WC-BIWE
✓ 有现货
$6.29 / 个
查看数据手册 →K4A8G085WB-BICH
✓ 有现货
$4.96 / 个
查看数据手册 →MT40A1G8SA-062E
✓ 有现货
$6.05 / 个
查看数据手册 →H5AN8G6NDJR
✓ 有现货
$35 / 个
查看数据手册 →K4A8G085WB-BIRC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gb |
| 存储组织 | 1G x 8 |
| 数据速率 | 2400 Mbps |
| 电源电压 | 1.2 V |
| 工作温度 | -40°C to 95°C |
| 封装 | 78-FBGA |
| Number of Terminals | 78 |
| Refresh Cycles | 8192 |
| Die Family | B-die |
| Burst Length | 8, 16 |
| 接口 | SSTL-12 |
| RoHS | Compliant |
| 安装类型 | Surface Mount |
K4A8G085WB-BIRC 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDD — Power supply |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ4 — Data input/output 4 |
| 引脚 B3 | DQ5 — Data input/output 5 |
| 引脚 B4 | VDD — Power supply |
| 引脚 B5 | DQ6 — Data input/output 6 |
| 引脚 B6 | DQ7 — Data input/output 7 |
| 引脚 B7 | VSS — Ground |
典型应用
K4A8G085WB-BIRC 适用于 6 应用s: High-Performance Computing, Networking Equipment, Industrial Embedded Systems, Automotive Infotainment, Data Center Servers, Consumer Electronics.
High-Performance Computing
The K4A8G085WB-BIRC delivers 2400 Mbps data rate and 8Gb density, making it ideal for HPC systems requiring high bandwidth and low latency. Its B-die design offers excellent overclocking potential, enabling memory-intensive workloads like scientific simulations and data analytics to run faster. The 1.2V operation reduces power consumption, crucial for large-scale clusters.
推荐
Networking Equipment
In routers, switches, and network appliances, the K4A8G085WB-BIRC provides fast, reliable memory for packet buffering and routing tables. Its 2400 Mbps speed ensures high throughput, while the wide temperature range (-40°C to 95°C) suits outdoor and industrial networking gear. The 78-FBGA package allows compact board designs.
推荐
Industrial Embedded Systems
The K4A8G085WB-BIRC operates reliably from -40°C to 95°C, making it suitable for industrial automation, robotics, and control systems. Its 1.2V low-power operation reduces heat generation, and the 8Gb density supports complex applications. The B-die's stability ensures consistent performance in harsh environments.
推荐
Automotive Infotainment
With its wide temperature range and high reliability, the K4A8G085WB-BIRC is well-suited for automotive infotainment systems, including navigation, multimedia, and driver assistance. The 2400 Mbps speed supports high-resolution displays and real-time data processing. The 1.2V operation aligns with automotive power budgets.
推荐
Data Center Servers
The K4A8G085WB-BIRC is ideal for data center servers requiring high-density, high-bandwidth memory. Its 8Gb density and 2400 Mbps speed enable fast data processing for cloud computing, virtualization, and big data analytics. The low 1.2V voltage reduces power and cooling costs, critical for large server farms.
推荐
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the K4A8G085WB-BIRC's B-die design offers superior overclocking potential, making it a favorite among enthusiasts. Its 2400 Mbps speed and 8Gb density provide ample memory for gaming, content creation, and multitasking. The 78-FBGA package is compatible with standard DIMM designs.
推荐
推荐产品汇总
工程参考数据： K4A8G085WB-BIRC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4A8G085WB-BCRC | K4A8G085WB-BITD | K4A8G085WC-BIWE | MT40A1G8SA-062E | H5AN8G6NDJR |
|---|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | 2400 Mbps | 2400 Mbps | 3200 Mbps | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
关键差异点
- B-die design offers superior overclocking potential （对比 K4A8G085WB-BCRC)
- Wide temperature range (-40°C to 95°C) （对比 MT40A1G8SA-062E)
- Same-brand availability and compatibility （对比 H5AN8G6NDJR)
设计说明
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 50 ohms for address/control lines. Use proper termination (ODT) and keep trace lengths matched within 100 mils. Place decoupling capacitors (0.1uF and 1uF) close to each VDD pin to minimize power supply noise.
The K4A8G085WB-BIRC operates up to 95°C, but for reliable long-term performance, keep the junction temperature below 85°C. Ensure adequate airflow or heatsinking in high-density designs. The 78-FBGA package has a thermal resistance that benefits from a solid ground plane and thermal vias under the package.
DDR4 signals are sensitive to crosstalk and reflections. Use series termination resistors (22-33 ohms) near the driver for address/control lines. For data lines, rely on the DRAM's on-die termination (ODT) settings. Keep the routing on inner layers with solid reference planes to reduce EMI.
合规信息
RoHS compliance is indicated by LCSC listing. Other compliance data not explicitly stated in the provided data.
