H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
N.º de pieza: H5AN8G6NDJR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $45.11 | $45,11 |
| 10 | $42.5 | $425,00 |
| 100 | $39.8 | $3.980,00 |
| 500 | $37.2 | $18.600,00 |
| 1.000 | $35 | $35.000,00 |
H5AN8G6NDJR Descripción general
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternativas directas para H5AN8G6NDJR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con H5AN8G6NDJR (mismo factor de forma y huella) — difiere en Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
H5AN8G6NDJR-XNC
✅ Sustitución directa✓ En stock
$55.6818 / unidad
Ver hoja de datos →H5AN8G6NCJR-xxC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$6.5 / unidad
Ver hoja de datos →K4A8G165WB-BCTD
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
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Ver hoja de datos →MT40A512M16TB-062E:R
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$60 / unidad
Ver hoja de datos →K4A8G165WB-BCRC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$12.57 / unidad
Ver hoja de datos →MT40A512M16TB-062E:IT
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
H5AN8G6NDJR Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 8 Gb |
| Organización de memoria | 512M x 16 |
| Velocidad de datos | 3200 Mbps (DDR4-3200) |
| Tensión de alimentación | 1.2 V |
| Encapsulado | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| Latencia CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| Características | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
Configuración de pines de H5AN8G6NDJR
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply (1.2V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply (1.2V) |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDD — Power supply (1.2V) |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
| Pin C1 | VDD — Power supply (1.2V) |
| Pin C2 | DQS0 — Data strobe 0 |
| Pin C3 | DQS0# — Data strobe 0 complement |
| Pin C4 | VSS — Ground |
| Pin C5 | DQS1 — Data strobe 1 |
| Pin C6 | DQS1# — Data strobe 1 complement |
| Pin C7 | VDD — Power supply (1.2V) |
| Pin C8 | DQS2 — Data strobe 2 |
| Pin C9 | DQS2# — Data strobe 2 complement |
| Pin C10 | VSS — Ground |
| Pin C11 | DQS3 — Data strobe 3 |
| Pin C12 | DQS3# — Data strobe 3 complement |
| Pin D1 | VSS — Ground |
| Pin D2 | DM0 — Data mask 0 |
| Pin D3 | DM1 — Data mask 1 |
| Pin D4 | VDD — Power supply (1.2V) |
| Pin D5 | DM2 — Data mask 2 |
| Pin D6 | DM3 — Data mask 3 |
| Pin D7 | VSS — Ground |
| Pin D8 | A0 — Address input 0 |
| Pin D9 | A1 — Address input 1 |
| Pin D10 | VDD — Power supply (1.2V) |
| Pin D11 | A2 — Address input 2 |
| Pin D12 | A3 — Address input 3 |
| Pin E1 | VDD — Power supply (1.2V) |
| Pin E2 | A4 — Address input 4 |
| Pin E3 | A5 — Address input 5 |
| Pin E4 | VSS — Ground |
| Pin E5 | A6 — Address input 6 |
| Pin E6 | A7 — Address input 7 |
| Pin E7 | VDD — Power supply (1.2V) |
| Pin E8 | A8 — Address input 8 |
| Pin E9 | A9 — Address input 9 |
| Pin E10 | VSS — Ground |
| Pin E11 | A10/AP — Address input 10 / auto precharge |
| Pin E12 | A11 — Address input 11 |
| Pin F1 | VSS — Ground |
| Pin F2 | A12 — Address input 12 |
| Pin F3 | A13 — Address input 13 |
| Pin F4 | VDD — Power supply (1.2V) |
| Pin F5 | A14 — Address input 14 |
| Pin F6 | A15 — Address input 15 |
| Pin F7 | VSS — Ground |
| Pin F8 | BA0 — Bank address 0 |
| Pin F9 | BA1 — Bank address 1 |
| Pin F10 | VDD — Power supply (1.2V) |
| Pin F11 | BA2 — Bank address 2 |
| Pin F12 | BG0 — Bank group 0 |
| Pin G1 | VDD — Power supply (1.2V) |
| Pin G2 | BG1 — Bank group 1 |
| Pin G3 | CK — Clock input |
| Pin G4 | CK# — Clock input complement |
| Pin G5 | VSS — Ground |
| Pin G6 | CKE — Clock enable |
| Pin G7 | VDD — Power supply (1.2V) |
| Pin G8 | CS# — Chip select |
| Pin G9 | RAS# — Row address strobe |
| Pin G10 | VSS — Ground |
| Pin G11 | CAS# — Column address strobe |
| Pin G12 | WE# — Write enable |
| Pin H1 | VSS — Ground |
| Pin H2 | ODT0 — On-die termination 0 |
| Pin H3 | ODT1 — On-die termination 1 |
| Pin H4 | VDD — Power supply (1.2V) |
| Pin H5 | RESET# — Asynchronous reset |
| Pin H6 | VSS — Ground |
| Pin H7 | VDD — Power supply (1.2V) |
| Pin H8 | ZQ — ZQ calibration |
| Pin H9 | VSS — Ground |
| Pin H10 | VDD — Power supply (1.2V) |
| Pin H11 | VSS — Ground |
| Pin H12 | VDD — Power supply (1.2V) |
Aplicaciones típicas
H5AN8G6NDJR es adecuado para 6 aplicacións: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
Recomendado
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
Recomendado
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
Recomendado
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
Recomendado
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para H5AN8G6NDJR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- High density and bandwidth (frente a K4A8G165WB-BCTD)
- Advanced features (frente a MT40A512M16TB-062E:R)
- Low power consumption (frente a K4A8G165WB-BCTD)
Notas de diseño
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
Información de cumplimiento
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
