H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
Référence : H5AN8G6NDJR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $45.11 | $45,11 |
| 10 | $42.5 | $425,00 |
| 100 | $39.8 | $3 980,00 |
| 500 | $37.2 | $18 600,00 |
| 1 000 | $35 | $35 000,00 |
H5AN8G6NDJR Présentation
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternatives de remplacement direct pour H5AN8G6NDJR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G6NDJR (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G6NDJR-XNC
✅ Remplacement direct✓ En stock
$55.6818 / unité
Voir la fiche technique →H5AN8G6NCJR-xxC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$37 / unité
Voir la fiche technique →MT40A512M16TB-062E:R
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WB-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$12.57 / unité
Voir la fiche technique →MT40A512M16TB-062E:IT
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
H5AN8G6NDJR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 3200 Mbps (DDR4-3200) |
| Tension d'alimentation | 1.2 V |
| Boîtier | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| Latence CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| Caractéristiques | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
Configuration des broches de H5AN8G6NDJR
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.2V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply (1.2V) |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDD — Power supply (1.2V) |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDD — Power supply (1.2V) |
| Broche C2 | DQS0 — Data strobe 0 |
| Broche C3 | DQS0# — Data strobe 0 complement |
| Broche C4 | VSS — Ground |
| Broche C5 | DQS1 — Data strobe 1 |
| Broche C6 | DQS1# — Data strobe 1 complement |
| Broche C7 | VDD — Power supply (1.2V) |
| Broche C8 | DQS2 — Data strobe 2 |
| Broche C9 | DQS2# — Data strobe 2 complement |
| Broche C10 | VSS — Ground |
| Broche C11 | DQS3 — Data strobe 3 |
| Broche C12 | DQS3# — Data strobe 3 complement |
| Broche D1 | VSS — Ground |
| Broche D2 | DM0 — Data mask 0 |
| Broche D3 | DM1 — Data mask 1 |
| Broche D4 | VDD — Power supply (1.2V) |
| Broche D5 | DM2 — Data mask 2 |
| Broche D6 | DM3 — Data mask 3 |
| Broche D7 | VSS — Ground |
| Broche D8 | A0 — Address input 0 |
| Broche D9 | A1 — Address input 1 |
| Broche D10 | VDD — Power supply (1.2V) |
| Broche D11 | A2 — Address input 2 |
| Broche D12 | A3 — Address input 3 |
| Broche E1 | VDD — Power supply (1.2V) |
| Broche E2 | A4 — Address input 4 |
| Broche E3 | A5 — Address input 5 |
| Broche E4 | VSS — Ground |
| Broche E5 | A6 — Address input 6 |
| Broche E6 | A7 — Address input 7 |
| Broche E7 | VDD — Power supply (1.2V) |
| Broche E8 | A8 — Address input 8 |
| Broche E9 | A9 — Address input 9 |
| Broche E10 | VSS — Ground |
| Broche E11 | A10/AP — Address input 10 / auto precharge |
| Broche E12 | A11 — Address input 11 |
| Broche F1 | VSS — Ground |
| Broche F2 | A12 — Address input 12 |
| Broche F3 | A13 — Address input 13 |
| Broche F4 | VDD — Power supply (1.2V) |
| Broche F5 | A14 — Address input 14 |
| Broche F6 | A15 — Address input 15 |
| Broche F7 | VSS — Ground |
| Broche F8 | BA0 — Bank address 0 |
| Broche F9 | BA1 — Bank address 1 |
| Broche F10 | VDD — Power supply (1.2V) |
| Broche F11 | BA2 — Bank address 2 |
| Broche F12 | BG0 — Bank group 0 |
| Broche G1 | VDD — Power supply (1.2V) |
| Broche G2 | BG1 — Bank group 1 |
| Broche G3 | CK — Clock input |
| Broche G4 | CK# — Clock input complement |
| Broche G5 | VSS — Ground |
| Broche G6 | CKE — Clock enable |
| Broche G7 | VDD — Power supply (1.2V) |
| Broche G8 | CS# — Chip select |
| Broche G9 | RAS# — Row address strobe |
| Broche G10 | VSS — Ground |
| Broche G11 | CAS# — Column address strobe |
| Broche G12 | WE# — Write enable |
| Broche H1 | VSS — Ground |
| Broche H2 | ODT0 — On-die termination 0 |
| Broche H3 | ODT1 — On-die termination 1 |
| Broche H4 | VDD — Power supply (1.2V) |
| Broche H5 | RESET# — Asynchronous reset |
| Broche H6 | VSS — Ground |
| Broche H7 | VDD — Power supply (1.2V) |
| Broche H8 | ZQ — ZQ calibration |
| Broche H9 | VSS — Ground |
| Broche H10 | VDD — Power supply (1.2V) |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply (1.2V) |
Applications typiques
H5AN8G6NDJR convient pour 6 applications: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
Recommandé
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
Recommandé
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
Recommandé
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
Recommandé
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
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Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G6NDJR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- High density and bandwidth (vs K4A8G165WB-BCTD)
- Advanced features (vs MT40A512M16TB-062E:R)
- Low power consumption (vs K4A8G165WB-BCTD)
Notes de conception
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
Informations de conformité
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
