H5TC4G63CFR-xxL - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
Référence : H5TC4G63CFR-xxL ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
H5TC4G63CFR-xxL Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 20% while maintaining backward compatibility with DDR3-based environments. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in laptops, embedded systems, and networking equipment where power efficiency is critical.
Key features of the H5TC4G63CFR-xxL include a 4Gb density, 256M x 16 organization, 1.35V power supply, and support for data rates up to 2133 Mbps (depending on the speed grade). The device offers low power consumption, with a typical operating current of and standby current of . It also features on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The device is designed for reliable operation over a temperature range of .
The H5TC4G63CFR-xxL utilizes advanced DRAM process technology, providing high density and performance while minimizing power consumption. The 96-pin FBGA package offers excellent thermal and electrical characteristics, supporting high-speed signaling with minimal parasitic inductance. The device includes auto-refresh and self-refresh modes to maintain data integrity with minimal power draw.
Typical applications include main memory for laptops and ultrabooks, embedded systems, networking equipment, and industrial computing. The low voltage and high bandwidth make it suitable for power-sensitive designs that require high performance. The device is also used in memory modules and system-on-module (SoM) designs.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Refer to the SK Hynix datasheet for detailed design guidelines and timing parameters.
Alternatives de remplacement direct pour H5TC4G63CFR-xxL — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63CFR-xxL (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Density, Clock Frequency, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63CFR-xxA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5TC4G63CFR-PBA
✅ Remplacement direct✓ En stock
$6.23 / unité
Voir la fiche technique →H5TC4G63CFR-RDA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5TC4G63CFR-RDAR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →H5TC4G63CFR-xxL Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35V |
| Boîtier | 96-pin FBGA |
| Burst Length | 8 (with burst chop) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Type de montage | Surface Mount |
| Nombre de broches | 96 |
| Interface | DDR3L |
Configuration des broches de H5TC4G63CFR-xxL
| Broche A0-A14 | Address Inputs — Row/column address inputs |
| Broche BA0-BA2 | Bank Address Inputs — Bank select |
| Broche DQ0-DQ15 | Data I/O — Bidirectional data bus |
| Broche DQS0-DQS1 | Data Strobe — Data strobe for read/write |
| Broche CK, CK# | Clock — Differential clock input |
| Broche CKE | Clock Enable — Enables clock |
| Broche CS# | Chip Select — Selects the device |
| Broche RAS# | Row Address Strobe — Row address latch |
| Broche CAS# | Column Address Strobe — Column address latch |
| Broche WE# | Write Enable — Write enable |
| Broche ODT | On-Die Termination — Termination control |
| Broche VDD | Power Supply — Core power supply (1.35V) |
| Broche VDDQ | I/O Power Supply — I/O power supply (1.35V) |
| Broche VSS | Ground — Ground |
| Broche VSSQ | I/O Ground — I/O ground |
Applications typiques
H5TC4G63CFR-xxL convient pour 6 applications: Laptop Main Memory, Embedded Systems, Networking Equipment, Industrial Computing, Memory Modules, Consumer Electronics.
Laptop Main Memory
The H5TC4G63CFR-xxL is ideal for laptop main memory due to its 4Gb density and 1.35V low power operation. It provides high bandwidth for multitasking and power efficiency for extended battery life. The 256M x 16 organization supports standard DDR3L memory modules, and the low voltage reduces heat generation, making it suitable for compact laptop designs.
Recommandé
Embedded Systems
In embedded systems, the H5TC4G63CFR-xxL provides high-density memory with low power consumption, essential for applications like industrial controllers and IoT gateways. The 1.35V operation reduces power dissipation, and the 96-pin FBGA package is compact for space-constrained designs. The device supports high bandwidth for real-time data processing, and its RoHS compliance meets environmental standards.
Recommandé
Networking Equipment
The H5TC4G63CFR-xxL is suitable for networking equipment such as routers and switches, where high bandwidth and low power are critical. The 4Gb density supports large routing tables and packet buffers, while the 1.35V operation reduces power consumption in always-on devices. The device's high-speed interface ensures low latency for data forwarding, and the FBGA package provides good thermal performance.
Recommandé
Industrial Computing
For industrial computing, the H5TC4G63CFR-xxL offers reliable memory with low power consumption, suitable for rugged environments. The device operates over a wide temperature range (if specified) and is lead-free, meeting industrial standards. The high bandwidth supports demanding applications like machine vision and process control, and the 96-pin FBGA package ensures robust soldering.
Recommandé
Memory Modules
The H5TC4G63CFR-xxL is commonly used in DDR3L memory modules (SO-DIMM, UDIMM) for desktops and servers. Its 4Gb density and x16 organization allow for module capacities of 4GB and higher. The low voltage operation is compatible with DDR3L module specifications, and the device's high bandwidth supports dual-channel configurations for improved performance.
Recommandé
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the H5TC4G63CFR-xxL provides high-density memory for multimedia processing. The 1.35V operation reduces power consumption, and the high bandwidth supports HD video streaming and gaming. The device's small FBGA package is ideal for slim designs, and its RoHS compliance meets consumer product regulations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63CFR-xxL — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63CFR-xxA | H5TC4G63CFR-PBA | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-pin FBGA | 96-pin FBGA | 96-pin FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Low voltage operation at 1.35V (vs K4B4G1646E-BYMA)
- Lead-free and halogen-free (vs MT41K256M16TW-107)
- Same-brand drop-in availability (vs K4B4G1646E-BYMA)
Notes de conception
For DDR3L memory, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to ensure signal integrity. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The H5TC4G63CFR-xxL operates at 1.35V, which is lower than standard DDR3. Ensure the power supply provides stable 1.35V with low ripple. Use a dedicated voltage regulator for the memory rail and place bulk capacitors (10uF) near the device to handle transient currents.
Although DDR3L consumes less power than DDR3, thermal management is still important. Ensure adequate airflow or a heatsink if the device is used in high-temperature environments. The FBGA package has a thermal resistance of [DATA_NEEDED: theta_JA], so calculate junction temperature to avoid exceeding the maximum rating.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. No AEC-Q100 qualification for memory components.
