AS4C512M16D4-75BCNTR vs AS4C512M16D4-75BIN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AS4C512M16D4-75BCNTR sa pamamagitan ng Alliance Memory at AS4C512M16D4-75BIN sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory
AS4C512M16D4-75BCNTR ✓ NakahandaAlliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AS4C512M16D4-75BCNTR | AS4C512M16D4-75BIN |
|---|---|---|
| Brand | Alliance Memory | Alliance Memory |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $7.90 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organisasyon | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | 1.333 GHz |
| Rate ng Data | 2666 Mbps per pin | 2666 Mbps |
| Access Time | 18 ns | 18 ns |
| Write Cycle Time | 15 ns | 15 ns |
| Supply Voltage (VDD) | 1.2 V (range 1.14 V to 1.26 V) | — |
| Interface | Parallel | POD |
| Prefetch Architecture | 8n | — |
| Internal Bank Count | 16 banks | — |
| Packhaging | 96-ball FBGA (7.5 x 13 mm) | 96-FBGA (7.5x13) |
| Hanay ng Temperature na Operasyon | 0C to +95C (case, commercial) | — |
| Process Technology | 20nm-class DRAM | — |
| Termination | On-die termination (ODT) | — |
| Refresh Modes | Auto-refresh and self-refresh | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging Option | Tape & Reel (TR suffix) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Laki ng Memory | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Volte ng Pagbibigay | — | 1.2 V |
| Temperature na Operasyon | — | -40°C to +95°C |
| Bilang ng Pins | — | 96 |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |