AUIRFB8409 vs IRFB4110PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AUIRFB8409 sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | AUIRFB8409 | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $1.55 |
| FET Type | N-Channel | — |
| Technology | HEXFET (planar-trench MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 195 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed ID value] | — |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical] | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 375 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -55 °C to +175 °C |
| Packhaging | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Qualification | Automotive Grade (AEC-Q101 family) | — |
| Tindminan RoHS | [DATA_NEEDED: explicit RoHS statement in datasheet] | Compliant (Pb-free suffix) |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |