BAT46WH vs 1N5711 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT46WH sa pamamagitan ng Nexperia at 1N5711 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT46WH | 1N5711 |
|---|---|---|
| Brand | Nexperia | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Configuration | Single | — |
| Technology | Planar Schottky barrier with integrated guard ring | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | — |
| Forward Current (IF) | 250 mA | — |
| Forward Voltage (VF) | 850 mV | 0.41 V (at 1 mA, per MACOM) |
| Non-Repetitive Peak Forward Current | 2.5 A | — |
| Maximum Operating Temperature | 155 C | — |
| Packhaging | SOD-123F (flat lead) SMD | DO-35 (DO-204AH) hermetic axial-lead glass |
| Uri ng Pagpapasok | Surface Mount | Through-Hole |
| Terminal Position | Dual | — |
| Terminal Form | Flat | — |
| Number of Terminals | 2 | — |
| Package Shape | Rectangular | — |
| Typical Applications | High-speed switching, voltage clamping, line termination, reverse polarity protection | — |
| Tindminan RoHS | Compliant | Compliant |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current IR] | [DATA_NEEDED: reverse leakage current at rated VR] |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Power Dissipation | [DATA_NEEDED: total power dissipation Ptot] | 430 mW |
| Diode Type | — | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |