BAT46WH vs 1N5711 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BAT46WH tarafından Nexperia ve 1N5711 tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BAT46WH 1N5711
Marka Nexperia STMicroelectronics
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Configuration Single —
Technology Planar Schottky barrier with integrated guard ring —
Repetitive Peak Reverse Voltage (VRRM) 100 V —
Forward Current (IF) 250 mA —
Forward Voltage (VF) 850 mV 0.41 V (at 1 mA, per MACOM)
Non-Repetitive Peak Forward Current 2.5 A —
Maximum Operating Temperature 155 C —
Paket SOD-123F (flat lead) SMD DO-35 (DO-204AH) hermetic axial-lead glass
Montaj Türü Surface Mount Through-Hole
Terminal Position Dual —
Terminal Form Flat —
Number of Terminals 2 —
Package Shape Rectangular —
Typical Applications High-speed switching, voltage clamping, line termination, reverse polarity protection —
RoHS Durumu Compliant Compliant
Reverse Leakage Current [DATA_NEEDED: reverse leakage current IR] [DATA_NEEDED: reverse leakage current at rated VR]
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Power Dissipation [DATA_NEEDED: total power dissipation Ptot] 430 mW
Diode Type — Small-signal Schottky barrier (RF) diode
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
İşletim Sıcaklığı — [DATA_NEEDED: operating temperature range]

Dökümanlar & Kaynaklar

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