BD249C vs BD249C-S Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BD249C sa pamamagitan ng onsemi at BD249C-S sa pamamagitan ng Bourns. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BD249C BD249C-S
Brand onsemi Bourns
Kategorya Transistors Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Polarity NPN —
Voltage ng Collector-Emitter (Vceo) 100 V 100 V
Continuous Collector Current 25 A —
Peak Collector Current 40 A —
Power Dissipation (at 25 C case) 125 W —
Dalas ng Transisyon (ft) 3 MHz 3 MHz
Complementary PNP Part BD250 series —
Packhaging SOT-93 (through hole) SOT-93 (TO-218), 3 pins, through hole
Uri ng Pagpapasok Through Hole Through Hole
Uri ng Transistor Single Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
ESD Rating - Machine Model > 400 V (Class C) —
ESD Rating - Human Body Model > 8000 V (Class 3B) —
Flammability Rating UL 94 V-0 @ 0.125 in UL 94 V-0 @ 0.125 in (epoxy, family data)
Lead-Free (Pb-Free) Package Available —
Operating Case Temperature [DATA_NEEDED: operating case temperature range] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] [DATA_NEEDED: hFE range and test conditions]
Collector-Base Voltage (VCB) — 100 V
Emitter-Base Voltage (VEB) — 5 V
Collector Current (Continuous) — 25 A
Collector Current (Peak) — 40 A
Total Power Dissipation (TC = 25 C) — 125 W
Power Derating — 1.0 W/C above 25 C case temperature
Bilang ng Pin — 3
Series Grade — BD249C (C grade, highest VCEO in BD249 series)
Complementary Device — BD250 series (PNP)
Temperature na Operasyon — [DATA_NEEDED: storage/operating junction temperature range]
ESD Rating (HBM) — Class 3B, > 8000 V (per onsemi BD249C family data)
Tindminan RoHS — [DATA_NEEDED: RoHS status for BD249C-S specifically]

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