BD249C vs BD249C-S 比較

詳細並排比較 BD249C 由 onsemi 與 BD249C-S 由 Bourns. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BD249C BD249C-S
品牌 onsemi Bourns
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
Polarity NPN —
集極-射極電壓 (Vceo) 100 V 100 V
Continuous Collector Current 25 A —
Peak Collector Current 40 A —
Power Dissipation (at 25 C case) 125 W —
轉換頻率 (ft) 3 MHz 3 MHz
Complementary PNP Part BD250 series —
封裝 SOT-93 (through hole) SOT-93 (TO-218), 3 pins, through hole
安裝類型 Through Hole Through Hole
電晶體類型 Single Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
ESD Rating - Machine Model > 400 V (Class C) —
ESD Rating - Human Body Model > 8000 V (Class 3B) —
Flammability Rating UL 94 V-0 @ 0.125 in UL 94 V-0 @ 0.125 in (epoxy, family data)
Lead-Free (Pb-Free) Package Available —
Operating Case Temperature [DATA_NEEDED: operating case temperature range] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] [DATA_NEEDED: hFE range and test conditions]
Collector-Base Voltage (VCB) — 100 V
Emitter-Base Voltage (VEB) — 5 V
Collector Current (Continuous) — 25 A
Collector Current (Peak) — 40 A
Total Power Dissipation (TC = 25 C) — 125 W
Power Derating — 1.0 W/C above 25 C case temperature
腳位數 — 3
Series Grade — BD249C (C grade, highest VCEO in BD249 series)
Complementary Device — BD250 series (PNP)
工作溫度 — [DATA_NEEDED: storage/operating junction temperature range]
ESD Rating (HBM) — Class 3B, > 8000 V (per onsemi BD249C family data)
RoHS 狀態 — [DATA_NEEDED: RoHS status for BD249C-S specifically]

資料表與資源

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